title: Large magnetoresistance effect due to spin injection into a nonmagnetic semiconductor.
abstract: A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a nonmagnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the nonmagnetic semiconductor and can theoretically yield a positive magnetoresistance of 100%, when the spin flip length in the nonmagnetic semiconductor is sufficiently large. Experimentally, our devices exhibit up to 25% magnetoresistance.
authors.affiliation: Physikalisches Institut, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany.
authors.forename: G
authors.initials: G
authors.lastname: Schmidt
authors.forename: G
authors.initials: G
authors.lastname: Richter
authors.forename: P
authors.initials: P
authors.lastname: Grabs
authors.forename: C
authors.initials: C
authors.lastname: Gould
authors.forename: D
authors.initials: D
authors.lastname: Ferrand
authors.forename: L W
authors.initials: LW
authors.lastname: Molenkamp