title: Ambipolar electrical transport in semiconducting single-wall carbon nanotubes.
abstract: Ambipolar electrical transport is reported in single-wall carbon nanotube (SWNT) field-effect transistors. In particular, the properties of SWNT junctions to TiC are discussed in detail. The carbide-nanotube junctions are abrupt and robust. In contrast to planar junctions, these contacts present low resistance for the injection of both p- and n-type carriers--the apparent barrier height of the junction is modified by the gate field. Thus SWNTs offer the novel possibility of ambipolar Ohmic contacts.
authors.affiliation: IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598, USA.
authors.forename: R
authors.initials: R
authors.lastname: Martel
authors.forename: V
authors.initials: V
authors.lastname: Derycke
authors.forename: C
authors.initials: C
authors.lastname: Lavoie
authors.forename: J
authors.initials: J
authors.lastname: Appenzeller
authors.forename: K K
authors.initials: KK
authors.lastname: Chan
authors.forename: J
authors.initials: J
authors.lastname: Tersoff
authors.forename: P
authors.initials: P
authors.lastname: Avouris