title: Resonant transport in Nb /GaAs /AlGaAs heterostructures: realization of the de Gennes-Saint-James model.
abstract: Resonant transport is demonstrated in a hybrid superconductor-semiconductor heterostructure junction grown by molecular beam epitaxy on GaAs. This heterostructure realizes the model system introduced by de Gennes and Saint-James in 1963 [P. G. de Gennes and D. Saint-James, Phys. Lett. 4, 151 (1963)]. At low temperatures a single marked resonance peak is shown superimposed to the characteristic Andreev-dominated subgap conductance. The observed magnetotransport properties are successfully analyzed within the random matrix theory of quantum transport, and ballistic effects are included by directly solving the Bogoliubov-de Gennes equations.
authors.affiliation: NEST-INFM and Scuola Normale Superiore, I-56126 Pisa, Italy.
authors.forename: F
authors.initials: F
authors.lastname: Giazotto
authors.forename: P
authors.initials: P
authors.lastname: Pingue
authors.forename: F
authors.initials: F
authors.lastname: Beltram
authors.forename: M
authors.initials: M
authors.lastname: Lazzarino
authors.forename: D
authors.initials: D
authors.lastname: Orani
authors.forename: S
authors.initials: S
authors.lastname: Rubini
authors.forename: A
authors.initials: A
authors.lastname: Franciosi