Transition temperature of ferromagnetic semiconductors: a dynamical mean field study.
We formulate a theory of doped magnetic semiconductors such as Ga(1-x)Mn(x)As which have attracted recent attention for their possible use in spintronic applications. We solve the theory in the dynamical mean field approximation to find the magnetic transition temperature T(c) as a function of magnetic coupling strength J, carrier density n, and Mn density x. We find that T(c) is determined by a subtle interplay between carrier density and magnetic coupling.
Chattopadhyay
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IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA.
Das Sarma
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Millis
A J
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