Electron energy loss near edge structure on the nitrogen K-edge in vanadium nitrides.
This paper presents electron energy-loss near-edge structure (ELNES) data for the N K edges of vanadium nitrides. By rapid thermal processing of vanadium layers in pure nitrogen at high temperatures the two known vanadium nitrides, VN and V2N, have been prepared. The phases have been checked by electron diffraction and quantitative electron energy-loss spectroscopy (EELS) analysis. Because their crystallographical structures are different, they also exhibit different ELNES features, which can be used as fingerprints for rapidly distinguishing between VN and V2N. The experimental findings are supported by modelling the N K edge using a band structure approach (full linearized augmented plane wave method).
Hofer
F
F
Research Institute for Electron Microscopy, Graz University of Technology and Center for Electron Microscopy Graz, A-8010 Graz, Austria. ferdinand.hofer@felmi-zfe.at
Warbichler
P
P
Scott
A
A
Brydson
R
R
Galesic
I
I
Kolbesen
B
B