title: Experimental and theoretical studies on the reaction of H(2) with NiO: role of O vacancies and mechanism for oxide reduction.
abstract: Reduction of an oxide in hydrogen is a method frequently employed in the preparation of active catalysts and electronic devices. Synchrotron-based time-resolved X-ray diffraction (XRD), X-ray absorption fine structure (NEXAFS/EXAFS), photoemission, and first-principles density-functional (DF) slab calculations were used to study the reaction of H(2) with nickel oxide. In experiments with a NiO(100) crystal and NiO powders, oxide reduction is observed at atmospheric pressures and elevated temperatures (250-350 degrees C), but only after an induction period. The results of in situ time-resolved XRD and NEXAFS/EXAFS show a direct NiO-->Ni transformation without accumulation of any intermediate phase. During the induction period, surface defect sites are created that provide a high efficiency for the dissociation of H(2). A perfect NiO(100) surface, the most common face of nickel oxide, exhibits a negligible reactivity toward H(2). The presence of O vacancies leads to an increase in the adsorption energy of H(2) and substantially lowers the energy barrier associated with the cleavage of the H-H bond. At the same time, adsorbed hydrogen can induce the migration of O vacancies from the bulk to the surface of the oxide. A correlation is observed between the concentration of vacancies in the NiO lattice and the rate of oxide reduction. These results illustrate the complex role played by O vacancies in the mechanism for reduction of an oxide. The kinetic models frequently used to explain the existence of an induction time during the reduction process can be important, but a more relevant aspect is the initial production of active sites for the rapid dissociation of H(2).
authors.affiliation: Department of Chemistry, Brookhaven National Laboratory, Upton, New York 11973, USA. rodrigez@bnl.gov
authors.forename: José A
authors.initials: JA
authors.lastname: Rodriguez
authors.forename: Jonathan C
authors.initials: JC
authors.lastname: Hanson
authors.forename: Anatoly I
authors.initials: AI
authors.lastname: Frenkel
authors.forename: Jae Y
authors.initials: JY
authors.lastname: Kim
authors.forename: Manuel
authors.initials: M
authors.lastname: Pérez