LACBED measurement of the chemical composition of a thin In(x)Ga(1-x)As layer buried in a GaAs matrix.
Large angle convergent beam electron diffraction (LACBED) observations are used to determine the x indium content of a thin In(x)Ga(1-x)As quantum well buried in a GaAs matrix. The method consists in a quantitative analysis of the Bragg line intensities lying in the central disc of any LACBED pattern. This analysis makes it possible to determine the displacement vector R introduced, between the two parts of the GaAs matrix, by the deformation of the quantum well and consequently to determine the x indium content. This indium content is found to be consistent with the value expected from the molecular beam epitaxy growth conditions.
Jacob
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D
Laboratoire de Structure et Propriétés de l'Etat Solide, ESA CNRS 8008 Université des Sciences et Technologies de Lille, Villeneuve d'Ascq, France. damien.jacob@univ-lillel.fr
Androussi
Y
Y
Lefebvre
A
A