Femtosecond silicon K alpha pulses from laser-produced plasmas.
Ultrashort bursts of silicon K alpha x-ray radiation from femtosecond-laser-produced plasmas have been generated. A cross-correlation measurement employing a laser-triggered ultrafast structural change of a CdTe crystal layer (320 nm) shows a K alpha pulse duration between 200 fs and 640 fs. This result is corroborated by particle in cell simulations combined with a Monte-Carlo electron stopping code and calculations on the structural changes of the crystal lattice.
Feurer
T
T
Institut für Optik und Quantenelektronik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, D-07743 Jena, Germany.
Morak
A
A
Uschmann
I
I
Ziener
Ch
Ch
Schwoerer
H
H
Reich
Ch
Ch
Gibbon
P
P
Förster
E
E
Sauerbrey
R
R
Ortner
K
K
Becker
C R
CR