title: Femtosecond silicon K alpha pulses from laser-produced plasmas.
abstract: Ultrashort bursts of silicon K alpha x-ray radiation from femtosecond-laser-produced plasmas have been generated. A cross-correlation measurement employing a laser-triggered ultrafast structural change of a CdTe crystal layer (320 nm) shows a K alpha pulse duration between 200 fs and 640 fs. This result is corroborated by particle in cell simulations combined with a Monte-Carlo electron stopping code and calculations on the structural changes of the crystal lattice.
authors.affiliation: Institut für Optik und Quantenelektronik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, D-07743 Jena, Germany.
authors.forename: T
authors.initials: T
authors.lastname: Feurer
authors.forename: A
authors.initials: A
authors.lastname: Morak
authors.forename: I
authors.initials: I
authors.lastname: Uschmann
authors.forename: Ch
authors.initials: Ch
authors.lastname: Ziener
authors.forename: H
authors.initials: H
authors.lastname: Schwoerer
authors.forename: Ch
authors.initials: Ch
authors.lastname: Reich
authors.forename: P
authors.initials: P
authors.lastname: Gibbon
authors.forename: E
authors.initials: E
authors.lastname: Förster
authors.forename: R
authors.initials: R
authors.lastname: Sauerbrey
authors.forename: K
authors.initials: K
authors.lastname: Ortner
authors.forename: C R
authors.initials: CR
authors.lastname: Becker