A group-IV ferromagnetic semiconductor: MnxGe1-x.
We report on the epitaxial growth of a group-IV ferromagnetic semiconductor, Mn(x)Ge(1-x), in which the Curie temperature is found to increase linearly with manganese (Mn) concentration from 25 to 116 kelvin. The p-type semiconducting character and hole-mediated exchange permit control of ferromagnetic order through application of a +/-0.5-volt gate voltage, a value compatible with present microelectronic technology. Total-energy calculations within density-functional theory show that the magnetically ordered phase arises from a long-range ferromagnetic interaction that dominates a short-range antiferromagnetic interaction. Calculated spin interactions and percolation theory predict transition temperatures larger than measured, consistent with the observed suppression of magnetically active Mn atoms and hole concentration.
Park
Y D
YD
Naval Research Laboratory, Washington, DC 20375, USA.
Hanbicki
A T
AT
Erwin
S C
SC
Hellberg
C S
CS
Sullivan
J M
JM
Mattson
J E
JE
Ambrose
T F
TF
Wilson
A
A
Spanos
G
G
Jonker
B T
BT