First systematic band-filling control in organic conductors.
The systematic study of band-filling control for four kinds of organic conductors with various kinds of ground states has succeeded. (1) By partial substitution of (GaCl(4))(-) by (MCl(4))(2-) [M = Co, Zn] in the anion blocking layer of lambda-ET(2)(GaCl(4))(-) [ET = bis(ethylenedithio)tetrathiafulvalene], single crystals of lambda-ET(2)(GaCl(4))(-)(1-x)(MCl(4))(2-)(x) [x = 0.0, 0.05, 0.06] have been obtained. The resistivity at room temperature decreases from 3 Omega cm (x = 0.0) to 0.1 Omega cm (x = 0.06) by doping to the antiferromagnet with an effective half-filled band (x = 0.0). (2) Another 2:1 (donor/anion) salt, delta'-ET(2)(GaCl(4))(-), which is a spin gap material, has been doped as delta'-ET(2)(GaCl(4))(-)(1-x)(MCl(4))(2-)(x) [x = 0.05, 0.14]. The resistivity is lowered from 10 Omega cm (x = 0.0) to 0.3 Omega cm (x = 0.14). For both 2:1 salts, the semiconducting behaviors have transferred to relatively conductive semiconducting ones by doping. (3) As for alpha-type 3:1 salts, the parent material is in a charge-ordering state such as alpha-(ET(+)ET(+)ET(0))(CoCl(4))(2-)(TCE), where the charge-ordered donors are dispersed in the two-dimensional conducting layer. Although the calculation of alpha-ET(3)(CoCl(4))(2-)(TCE) shows a band-insulating nature, and the crystal structure analysis indicates that this material is in a charge-ordering state, the metallic behavior down to 165 K has been observed. With doping of (GaCl(4))(-) to the alpha-system, isostructural alpha-ET(3)(CoCl(4))(2-)(1-x)(GaCl(4))(-)(x)(TCE) [x = 0.54, 0.57, 0.62] have been afforded, where the pattern of the horizontal stripe-type charge ordering changes with an increase of x. (4) By doping (GaCl(4))(-) to the 3:2 gapless band insulator which is isostructural to beta'-ET(3)(MCl(4))(2)(2-) [M = Zn, Mn], the obtained beta'-ET(3)(CoCl(4))(2-)(2-x)(GaCl(4))(-)(x) [x = 0.66, 0.88] shows metallic behavior down to 100 and 140 K, respectively. They are the first metallic states in organic conductors by band-filling control of the gapless band insulator. These systematic studies of band-filling control suggest that the doping to the gapless band insulator with a pseudo-1/2-filled band is most effective.
Mori
Hatsumi
H
International Superconductivity Technology Center, Shinonome Koto-ku, Tokyo 135-0062, Japan. mori@istec.or.jp
Kamiya
Masakazu
M
Haemori
Masamitsu
M
Suzuki
Hideaki
H
Tanaka
Shoji
S
Nishio
Yutaka
Y
Kajita
Kohji
K
Moriyama
Hiroshi
H