Microwaves as an energy source for producing beta-SiC.
This work describes the production of silicon carbide using microwaves as the energy source, which was supplied by means of variable power, up to 2000 Watts, magnetron operating at 2.45 GHz. The obtained samples were analyzed by means of X-ray diffraction and observed with electron microscopy (SEM). Temperatures achieved were around 2000 degrees C, which is the upper limit for the beta-SiC growth regime, before getting other SiC polytypes. Analysis of different portions of the sample showed that beta-SiC was the only formed compound, although free SiO2 and graphite were also present. Observations made by SEM demonstrated different crystal growth regime, meaning that thermal conditions were not totally uniform. The amount of beta-SiC found and the relative simplicity of the device prove that production of this material from silica and graphite is possible by applying microwaves as an energy source.
Aguilar
J
J
Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, NL Mexico.
Rodríguez
J
J
Hinojosa
M
M
D017554:Carbon Compounds, Inorganic / Q000138:chemical synthesis*; D003460:Crystallization; D008855:Microscopy, Electron, Scanning; D008872:Microwaves; D017655:Silicon Compounds / Q000138:chemical synthesis*; D013696:Temperature; D014961:X-Ray Diffraction
D017554:Carbon Compounds, Inorganic; D017655:Silicon Compounds; C022088:silicon carbide