Growth of precursors in silicon using pseudopotential calculations.
Based on the results of pseudopotential calculations, the progression of a single interstitial into small compact clusters and ultimately into chain-like defects is examined. For clusters that consist of more than eight interstitials, the capture of bond-centered interstitials reveals a change in the growth mechanism leading to enhanced stability of clusters. The five-interstitial model is proposed to be a plausible candidate for optically active W centers, observed in ion irradiated silicon.
Chichkine
M P
MP
Emerging Technologies Research Centre, De Montfort University, Leicester, LE1 9BH, United Kingdom.
De Souza
M M
MM
Sankara Narayanan
E M
EM