title: Wetting droplet instability and quantum ring formation.
abstract: InAs islands on GaAs substrates undergo a morphological change into ring-shaped configurations upon deposition of a GaAs layer after island growth. By invoking an analogy of the InAs islands to wetting droplets on solid substrates, we suggest that this transition might be brought about by a change of the surface free-energy balance at the three-phase contact-line between GaAs, InAs, and vacuum (or As atmosphere). Our scenario can also be tested in conventional liquid systems (e.g., polymers).
authors.affiliation: Fachbereich Physik, Universität Essen, D-45117 Essen, Germany.
authors.forename: Ralf
authors.initials: R
authors.lastname: Blossey
authors.forename: Axel
authors.initials: A
authors.lastname: Lorke