Spin-filter device based on the Rashba effect using a nonmagnetic resonant tunneling diode.
We propose an electronic spin-filter device that uses a nonmagnetic triple barrier resonant tunneling diode (TB-RTD). This device combines the spin-split resonant tunneling levels induced by the Rashba spin-orbit interaction and the spin blockade phenomena between two regions separated by the middle barrier in the TB-RTD. Detailed calculations using the InAlAs/InGaAs material system reveal that a splitting of a peak should be observed in the I-V curve of this device as a result of the spin-filtering effect. The filtering efficiency exceeds 99.9% at the peak positions in the I-V curve.
Koga
Takaaki
T
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa, 243-0198 Japan. koga@will.brl.ntt.co.jp
Nitta
Junsaku
J
Takayanagi
Hideaki
H
Datta
Supriyo
S