Reflective light modulator based on epsilon-GaSe crystal.
We report the results of investigating a low-voltage, polarization-insensitive, reflective-type modulator based on an epsilon-GaSe crystal and operated at the 1.960-eV line of a He-Ne laser. We demonstrate that the modulation in an Al-epsilon-GaSe-Cu device results mainly from the Franz-Keldysh effect. Relatively high speed and low operating voltage could make these modulators with Schottky-barrier contacts attractive devices in the red range of the spectrum.
Allakhverdiev
Kerim
K
Institute of Physics, Azerbaijan Academy of Sciences, Baku, Azerbaijan Republic. kerim.allahverdi@posta.mam.gov.tr
Ismailov
Namik
N
Salaeva
Zehra
Z
Mikailov
Faik
F
Gulubayov
Aydin
A
Mamedov
Tofik
T
Babaev
Sardar
S