title: Novel pathway to the growth of diamond on cubic beta-SiC(001).
abstract: By carrying out first-principles calculations on diamond-forming processes, we predict a method for the heteroepitaxial growth of diamond on cubic beta-SiC(001). In the method, we used two processes: (i) the preformation of an sp(3)-like surface configuration of beta-SiC(001) by the adsorption of group-V surfactants; (ii) the successive growth of diamond by the segregation of the surfactants onto a surface and the desorption of surface hydrogen. Analyzing the segregation energies, we found that the atomic size effect plays a crucial role in the surfactant-mediated growth of diamond on beta-SiC(001).
authors.affiliation: IQUIPS, University of Seoul, 90 Jeonnong-dong, Dongdaemun-gu, Seoul 130-743, Korea.
authors.forename: K
authors.initials: K
authors.lastname: Kong
authors.forename: M
authors.initials: M
authors.lastname: Han
authors.forename: H W
authors.initials: HW
authors.lastname: Yeom
authors.forename: Y
authors.initials: Y
authors.lastname: Miyamoto
authors.forename: O
authors.initials: O
authors.lastname: Sugino
authors.forename: T
authors.initials: T
authors.lastname: Sasaki
authors.forename: T
authors.initials: T
authors.lastname: Ohno
authors.forename: B D
authors.initials: BD
authors.lastname: Yu