title: Key to understanding interstitial H2 in Si.
abstract: A new IR absorption line at 3191.1 cm(-1) has been discovered for the interstitial HD molecule in Si. This new line appears for sample temperatures above approximately 20 K and lies 73.9 cm(-1) below the 3265.0 cm(-1) line previously observed for HD. We attribute the 73.9 cm(-1) energy difference to the rotation of the interstitial HD molecule. The selection rules associated with these two lines are consistent with the puzzling absence of an ortho-para splitting in the IR absorption spectra of H2 and D2 in Si.
authors.affiliation: Department of Physics and Sherman Fairchild Laboratory, Lehigh University, Bethlehem, Pennsylvania 18015.
authors.forename: E Elinor
authors.initials: EE
authors.lastname: Chen
authors.forename: Michael
authors.initials: M
authors.lastname: Stavola
authors.forename: W Beall
authors.initials: WB
authors.lastname: Fowler
authors.forename: Peter
authors.initials: P
authors.lastname: Walters