title: Nanomechanics: response of a strained semiconductor structure.
abstract: The nanomechanical properties of thin silicon films will become increasingly critical in semiconductor devices, particularly in the context of substrates that consist of a silicon film on an insulating layer (known as silicon-on-insulator, or SOI, substrates). Here we use very small germanium crystals as a new type of nanomechanical stressor to demonstrate a surprising mechanical behaviour of the thin layer of silicon in SOI substrates, and to show that there is a large local reduction in the viscosity of the oxide on which the silicon layer rests. These findings have implications for the use of SOI substrates in nanoelectronic devices.
authors.affiliation: Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, USA.
authors.forename: Feng
authors.initials: F
authors.lastname: Liu
authors.forename: Paul
authors.initials: P
authors.lastname: Rugheimer
authors.forename: E
authors.initials: E
authors.lastname: Mateeva
authors.forename: D E
authors.initials: DE
authors.lastname: Savage
authors.forename: M G
authors.initials: MG
authors.lastname: Lagally