Ellipsometric investigation of rough zinc arsenide epilayers.
We report single-wavelength ellipsometric measurements of the complex index of refraction of rough Zn3As2 films on InP substrates. What we believe to be a novel technique, based on surface roughness measurements by atomic-force microscopy, is discussed to extract useful information from the ellipsometry results. The anticipated presence of a thin oxide layer is confirmed by Auger electron spectroscopy.
Brink
Daniel J
DJ
Department of Physics, University of Pretoria, South Africa. dbrink@postino.up.ac.za
Engelbrecht
Jacobus A A
JA