Molecular wires, switches, and memories.
Design and measurements of molecular wires, switches, and memories offer an increased device capability with reduced elements. We report: Measurements on through-bond electronic transport properties of nanoscale metal-1,4-phenylene diisocyanide-metal junctions are reported, where nonohmic thermionic emission is the dominant process, with isocyanide-Pd showing the lowest thermionic barrier of 0.22 eV; robust and large reversible switching behavior in an electronic device that utilizes molecules containing redox centers as the active component, exhibiting negative differential resistance (NDR) and large on-off peak-to-valley ratio (PVR) are realized; erasable storage of higher conductivity states in these redox-center-containing molecular devices are observed; and a two-terminal electronically programmable and erasable molecular memory cell with long bit retention time is demonstrated.
Chen
J
J
Department of Electrical Engineering, Yale University, P.O. Box 208284, New Haven, Connecticut 06520, USA. chenjia@us.ibm.com
Wang
W
W
Klemic
J
J
Reed
M A
MA
Axelrod
B W
BW
Kaschak
D M
DM
Rawlett
A M
AM
Price
D W
DW
Dirk
S M
SM
Tour
J M
JM
Grubisha
D S
DS
Bennett
D W
DW
D003486:Cyanides / Q000737:chemistry; D004553:Electric Conductivity; D017097:Electric Impedance; D004579:Electron Transport; D004583:Electrons; D016247:Information Storage and Retrieval; D007854:Lead / Q000737:chemistry; D008956:Models, Chemical; D008962:Models, Theoretical; D010084:Oxidation-Reduction; D013696:Temperature
D003486:Cyanides; D007854:Lead