Structure-dependent vibrational lifetimes of hydrogen in silicon.
The lifetimes of the Si-H vibrational stretch modes of the H(*)(2) ( 2062 cm(-1)) and HV.VH((110)) ( 2072.5 cm(-1)) defects in crystalline Si are measured directly by transient bleaching spectroscopy from 10 K to room temperature. The interstitial-type defect H(*)(2) has a lifetime of 4.2 ps at 10 K, whereas the lifetime of the vacancy-type complex HV.VH((110)) is 2 orders of magnitude longer, 295 ps. The temperature dependence of the lifetime of H(*)(2) is governed by TA phonons, while HV.VH((110)) is governed by LA phonons. This behavior is attributed to the distinctly different local structure of these defects and the accompanying local vibrational modes.
Lüpke
G
G
Department of Applied Science, The College of William & Mary, Williamsburg, Virginia 23187, USA.
Zhang
X
X
Sun
B
B
Fraser
A
A
Tolk
N H
NH
Feldman
L C
LC