title: Effect of optical spin injection on ferromagnetically coupled Mn spins in the III-V magnetic alloy semiconductor (Ga,Mn)As.
abstract: We report on the new type of photoinduced magnetization in ferromagnetic (Ga,Mn)As thin films. Optically generated spin-polarized holes change the orientation of ferromagnetically coupled Mn spins and cause a large change in magnetization, being 15% of the saturation magnetization, without the application of a magnetic field. The memorization effect has also been found as a trace after the photoinduced magnetization. The observed results suggest that a small amount of nonequilibrium carrier spins can cause collective rotation of Mn spins presumably through the p-d exchange interaction.
authors.affiliation: Kanagawa Academy of Science and Technology, 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan. oiwa@net.ksp.or.jp
authors.forename: A
authors.initials: A
authors.lastname: Oiwa
authors.forename: Y
authors.initials: Y
authors.lastname: Mitsumori
authors.forename: R
authors.initials: R
authors.lastname: Moriya
authors.forename: T
authors.initials: T
authors.lastname: Słupinski
authors.forename: H
authors.initials: H
authors.lastname: Munekata