Recrystallization by annealing in SiC amorphized with Ne irradiation.
Alpha-silicon carbide was irradiated with Ne+ ions at room temperature to various fluences up to 7.5 x 10(20) Ne+ m(-2) and then isochronally annealed under observation with a transmission electron microscope. In all cases, thin regions were completely amorphized by irradiation and epitaxial growth occurred from the residual crystalline region by subsequent annealing. Crystal nucleation occurred with annealing at 1000 degrees C in the cases of 3.8 x 10(20) and 7.5 x 10(20) Ne+ m(-2) irradiation, and at 1100 degrees C in the cases of 1.3 x 10(20) and 2.3 x 10(20) Ne+ m(-2) irradiation. Growth or formation of bubbles was observed with annealing at 1000 degrees C after 1.3 x 10(20), 2.3 x 10(20), and 3.8 x 10(20) Ne+ m(-2) irradiation.
Aihara
Jun
J
Japan Atomic Energy Research Institute, Higashi-ibaraki-gun, Ibaraki-ken. aihara@sspl.tokai.jaeri.go.jp
Hojou
Kiichi
K
Furuno
Shigemi
S
Ishihara
Masahiro
M
Hayashi
Kimio
K