Low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers.
We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities n approximately (1-50)x10(11) cm(-2), which includes the vicinity of the apparent metal-insulator transition in two dimensions (2D MIT). Using a novel technique of measuring the SdH oscillations in superimposed and independently controlled parallel and perpendicular magnetic fields, we determined the spin susceptibility chi(*), the effective mass m(*), and the g(*) factor for mobile electrons. These quantities increase gradually with decreasing density; near the 2D MIT, we observed enhancement of chi(*) by a factor of approximately 4.7.
Pudalov
V M
VM
Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA.
Gershenson
M E
ME
Kojima
H
H
Butch
N
N
Dizhur
E M
EM
Brunthaler
G
G
Prinz
A
A
Bauer
G
G