title: Low-temperature-GaAs device used simultaneously as a mode-locking device and as a photoconductive switch.
abstract: We present a low-temperature-grown GaAs device that combines the features of mode locking and photoconductive switching. The mode-locking mechanism is based on intensity-dependent defocusing. Additionally, the generated carriers produce an electrical signal in the biased switch geometry. This technique allows for simultaneous generation of synchronized optical and electrical pulse trains with a single device.
authors: Max-Born-Institute for Nonlinear Optics and Short Pulse Spectroscopy, Berlin, Germany. leitner@mbi-berlin.de
authors: Martin
authors: M
authors: Leitner
authors: Peter
authors: P
authors: Glas
authors: Peter
authors: P
authors: Semionyk
authors: Marc
authors: M
authors: Wrage
authors: Jens
authors: J
authors: Herfort
authors: Lutz
authors: L
authors: Däweritz