title: Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN.
abstract: Two compounds SiC and AlN, normally insoluble in each other below approximately 2000 degrees C, are synthesized as a single-phase solid-solution thin film by molecular beam epitaxy at 750 degrees C. The growth of epitaxial SiCAlN films with hexagonal structure takes place on 6H-SiC(0001) substrates. Two structural models for the hexagonal SiCAlN films are constructed based on first-principles total-energy density functional theory calculations, each showing agreement with the experimental microstructures observed in cross-sectional transmission electron microscopy images. The predicted fundamental band gap is 3.2 eV for the stoichiometric SiCAlN film.
authors: Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287, USA.
authors: R
authors: R
authors: Roucka
authors: J
authors: J
authors: Tolle
authors: A V G
authors: AV
authors: Chizmeshya
authors: P A
authors: PA
authors: Crozier
authors: C D
authors: CD
authors: Poweleit
authors: D J
authors: DJ
authors: Smith
authors: I S T
authors: IS
authors: Tsong
authors: J
authors: J
authors: Kouvetakis