title: Origin of the stability of Ge(105) on si: a new structure model and surface strain relaxation.
abstract: The structure of Ge(105)-(1 x 2) grown on Si(105) is examined by scanning tunneling microscopy (STM) and first-principles calculations. The morphology evolution with an increasing amount of Ge deposited documents the existence of a tensile surface strain in Si(105) and its relaxation with increasing coverage of Ge. A detailed analysis of high-resolution STM images and first-principles calculations produce a new stable model for the Ge(105)-(1 x 2) structure formed on the Si(105) surface that includes the existence of surface strain. It corrects the model developed from early observations of the facets of "hut" clusters grown on Si(001).
authors: Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
authors: Y
authors: Y
authors: Fujikawa
authors: K
authors: K
authors: Akiyama
authors: T
authors: T
authors: Nagao
authors: T
authors: T
authors: Sakurai
authors: M G
authors: MG
authors: Lagally
authors: T
authors: T
authors: Hashimoto
authors: Y
authors: Y
authors: Morikawa
authors: K
authors: K
authors: Terakura