title: Low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers.
abstract: We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities n approximately (1-50)x10(11) cm(-2), which includes the vicinity of the apparent metal-insulator transition in two dimensions (2D MIT). Using a novel technique of measuring the SdH oscillations in superimposed and independently controlled parallel and perpendicular magnetic fields, we determined the spin susceptibility chi(*), the effective mass m(*), and the g(*) factor for mobile electrons. These quantities increase gradually with decreasing density; near the 2D MIT, we observed enhancement of chi(*) by a factor of approximately 4.7.
authors: Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA.
authors: V M
authors: VM
authors: Pudalov
authors: M E
authors: ME
authors: Gershenson
authors: H
authors: H
authors: Kojima
authors: N
authors: N
authors: Butch
authors: E M
authors: EM
authors: Dizhur
authors: G
authors: G
authors: Brunthaler
authors: A
authors: A
authors: Prinz
authors: G
authors: G
authors: Bauer