title: Anomalous LO phonon lifetime in AlAs.
abstract: The temperature dependence of the frequencies and linewidths of the Raman-active longitudinal optical (LO) phonons in GaAs and AlAs have been measured. The low-temperature lifetime of the LO phonon in AlAs is found to be 9.7 ps, very close to the corresponding GaAs value of 9.5 ps. This contradicts early theoretical predictions. The agreement between theory and experiment can be restored when the accidental degeneracy between the AlAs LO phonon frequency and a feature in the two-phonon density of states is taken into account.
authors.affiliation: Department of Physics and Astronomy, Arizona State University, Box 871504, Tempe, Arizona 85287-1504, USA.
authors.forename: M
authors.initials: M
authors.lastname: Canonico
authors.forename: C
authors.initials: C
authors.lastname: Poweleit
authors.forename: J
authors.initials: J
authors.lastname: Menéndez
authors.forename: A
authors.initials: A
authors.lastname: Debernardi
authors.forename: S R
authors.initials: SR
authors.lastname: Johnson
authors.forename: Y-H
authors.initials: YH
authors.lastname: Zhang