title: A fourfold coordinated point defect in silicon.
abstract: Vacancies, interstitials, and Frenkel pairs are considered to be the basic point defects in silicon. We challenge this point of view by presenting density functional calculations that show that there is a stable point defect in silicon that has fourfold coordination and is lower in energy than the traditional defects.
authors.affiliation: Département de Recherche Fondamentale sur la Matière Condensée, SP2M/L_Sim, CEA-Grenoble, 38054 Grenoble cedex 9, France.
authors.forename: Stefan
authors.initials: S
authors.lastname: Goedecker
authors.forename: Thierry
authors.initials: T
authors.lastname: Deutsch
authors.forename: Luc
authors.initials: L
authors.lastname: Billard