Novel sb induced reconstruction of the (113) surface of ge.
Sb induces on Ge(113) a c(2 x 2) reconstruction in which Sb breaks one Ge-Ge bond and occupies an interstitial site, in contrast to Sb adsorption on other Si or Ge surfaces. Sb saturates the three dangling bonds per unit cell of the (113) surface inducing a large strain which is released by occupation of the interstitial site. Two neighboring Sb at interstitial sites form a dimer. The structure has been determined by x-ray diffraction, applying direct methods, and ab initio density-functional-theory calculations. The adsorption geometry and the high binding energy lead one to expect that Sb cannot be used as a surfactant for the growth of Si/Ge layers on the (113) surface.
Hirnet
A
A
Institut für Kristallographie der Universität München, 80333 München, Germany.
Schroeder
K
K
Blügel
S
S
Torrelles
X
X
Albrecht
M
M
Jenichen
B
B
Gierer
M
M
Moritz
W
W