title: Manipulation of the spin memory of electrons in n-GaAs.
abstract: We report on the optical manipulation of the electron spin relaxation time in a GaAs-based heterostructure. Experimental and theoretical study shows that the average electron spin relaxes through hyperfine interaction with the lattice nuclei, and that the rate can be controlled by electron-electron interactions. This time has been changed from 300 ns down to 5 ns by variation of the laser frequency. This modification originates in the optically induced depletion of an n-GaAs layer.
authors.affiliation: A. F. Ioffe Physical Technical Institute, St. Petersburg, 194021 Russia.
authors.forename: R I
authors.initials: RI
authors.lastname: Dzhioev
authors.forename: V L
authors.initials: VL
authors.lastname: Korenev
authors.forename: I A
authors.initials: IA
authors.lastname: Merkulov
authors.forename: B P
authors.initials: BP
authors.lastname: Zakharchenya
authors.forename: D
authors.initials: D
authors.lastname: Gammon
authors.forename: Al L
authors.initials: AL
authors.lastname: Efros
authors.forename: D S
authors.initials: DS
authors.lastname: Katzer