Doping dependence of an n-type cuprate superconductor investigated by angle-resolved photoemission spectroscopy.
We present an angle-resolved photoemission doping dependence study of the n-type cuprate superconductor Nd(2-x)Ce(x)CuO(4+/-delta), from the half-filled Mott insulator to the T(c) = 24 K superconductor. In Nd2CuO4, we reveal the charge-transfer band for the first time. As electrons are doped into the system, this feature's intensity decreases with the concomitant formation of near- E(F) spectral weight. At low doping, the Fermi surface is an electron-pocket (with volume approximately x) centered at (pi,0). Further doping leads to the creation of a new holelike Fermi surface (volume approximately 1+x) centered at (pi,pi). These findings shed light on the Mott gap, its doping evolution, as well as the anomalous transport properties of the n-type cuprates.
Armitage
N P
NP
Department of Physics, Applied Physics and Stanford Synchrotron Radiation Laboratory, Stanford University, Stanford, California 94305, USA.
Ronning
F
F
Lu
D H
DH
Kim
C
C
Damascelli
A
A
Shen
K M
KM
Feng
D L
DL
Eisaki
H
H
Shen
Z-X
ZX
Mang
P K
PK
Kaneko
N
N
Greven
M
M
Onose
Y
Y
Taguchi
Y
Y
Tokura
Y
Y