Manipulation of the spin memory of electrons in n-GaAs.
We report on the optical manipulation of the electron spin relaxation time in a GaAs-based heterostructure. Experimental and theoretical study shows that the average electron spin relaxes through hyperfine interaction with the lattice nuclei, and that the rate can be controlled by electron-electron interactions. This time has been changed from 300 ns down to 5 ns by variation of the laser frequency. This modification originates in the optically induced depletion of an n-GaAs layer.
Dzhioev
R I
RI
A. F. Ioffe Physical Technical Institute, St. Petersburg, 194021 Russia.
Korenev
V L
VL
Merkulov
I A
IA
Zakharchenya
B P
BP
Gammon
D
D
Efros
Al L
AL
Katzer
D S
DS