High-contrast images of semiconductor sites via one-photon optical beam-induced current imaging and confocal reflectance microscopy.
We demonstrate a computationally efficient procedure for determining only the semiconductor sites in a confocal reflectance image of an integrated circuit. It utilizes a one-photon optical beam-induced current (1P-OBIC) and confocal reflectance images that are generated from the same focused excitation beam. A 1P-OBIC image is a two-dimensional map of the currents induced by the beam as it is scanned across the circuit surface. A 1P-OBIC is produced by an illuminated semiconductor material if the excitation photon energy exceeds the bandgap. The 1P-OBIC image has no vertical resolution because the 1P-OBIC is linear with the excitation beam intensity. The exclusive high-contrast image of semiconductor sites is generated by the product of the 1P-OBIC image and the confocal image. High-contrast images of the metal sites are also obtained by the product of the complementary OBIC image and the same confocal image.
National Institute of Physics, University of the Philippines, Diliman, Quezon City.
Vincent R
VR
Daria
Jelda J
JJ
Miranda
Caesar
C
Saloma