Morphology controlled growth of arrays of GaN nanopillars and randomly distributed GaN nanowires on sapphire using (N3)2Ga[(CH2)3NMe2] as a single molecule precursor.
Controlled growth of oriented GaN nanopillars and randomly distributed nanowires is accomplished by MOCVD using (N3)2Ga[(CH2)3NMe2] as a single molecule precursor.
Ruhr-University Bochum, Universitätsstr. 150, 44801 Bochum, Germany.
Andreas
A
Wohlfart
Anjana
A
Devi
Eva
E
Maile
Roland A
RA
Fischer