Fabrication of a nano-scale gap by selective chemical deposition.
An electrode nanogap of 45 nm has been prepared by a new method in which the initial gap of 1-2 microns obtained by conventional lithography was shortened by selective chemical deposition of copper onto the electrodes.
Huang
Lan
L
National Laboratory of Molecular and Biomolecular Electronics, Southeast University, Nanjing 210096, People's Republic of China. huanglan822@yahoo.com
Xu
Lina
L
Zhang
Haiqin
H
Gu
Ning
N