Morphology controlled growth of arrays of GaN nanopillars and randomly distributed GaN nanowires on sapphire using (N3)2Ga[(CH2)3NMe2] as a single molecule precursor.
Controlled growth of oriented GaN nanopillars and randomly distributed nanowires is accomplished by MOCVD using (N3)2Ga[(CH2)3NMe2] as a single molecule precursor.
Wohlfart
Andreas
A
Ruhr-University Bochum, Universitätsstr. 150, 44801 Bochum, Germany.
Devi
Anjana
A
Maile
Eva
E
Fischer
Roland A
RA