Measurement of mean free paths for inelastic electron scattering of Si and SiO2.
The effects of accelerating voltage and collection angle on the mean free path for all inelastic electron scattering (lambdap), which is an important parameter for determining specimen thickness by using electron energy-loss spectroscopy, were investigated with crystalline Si and amorphous SiO2. First, thickness of Si film was measured with the convergent-beam electron diffraction method, while thickness of SiO2 particles was estimated from their spherical shape. Then from electron energy-loss spectra, lambdap was evaluated for Si film and SiO2 particles by changing the accelerating voltage (100 to approximately 300 kV) and the collection angle for the scattered electrons. Under the condition of no objective aperture, lambdap for Si film and SiO2 particles was found to increase with the increase of accelerating voltage and to take values of 180+/-6 nm (Si) and 247+/-8 nm (SiO2) at 300 kV. Also, it was found that lambdap in both cases decreases drastically with the increase of collection angle in the range smaller than 25 mrad, while it tends to take a constant value at the collection angle larger than 25 mrad at 200 kV.
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai, Japan.
Chang-Woo
CW
Lee
Yoichi
Y
Ikematsu
Daisuke
D
Shindo