title: Staircase in the electron mobility of a ZnO quantum dot assembly due to shell filling.
abstract: Electron transport in an assembly of ZnO quantum dots has been studied using an electrochemically gated transistor. The electron mobility shows a stepwise increase as a function of the electron occupation per quantum dot. When the occupation number is below two, transport occurs by tunneling between the S orbitals. Transport becomes 3 times faster when the occupation number is between two and eight; tunneling now occurs between the P orbitals. Electron transport is thus critically determined by the quantum properties of the building blocks.
authors.affiliation: Debye Institute, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, The Netherlands.
authors.forename: A L
authors.initials: AL
authors.lastname: Roest
authors.forename: J J
authors.initials: JJ
authors.lastname: Kelly
authors.forename: D
authors.initials: D
authors.lastname: Vanmaekelbergh
authors.forename: E A
authors.initials: EA
authors.lastname: Meulenkamp