title: Structural relaxation of amorphous silicon carbide.
abstract: We have examined amorphous structures of silicon carbide (SiC) using both transmission electron microscopy and a molecular-dynamics approach. Radial distribution functions revealed that amorphous SiC contains not only heteronuclear (Si-C) bonds but also homonuclear (Si-Si and C-C) bonds. The ratio of heteronuclear to homonuclear bonds was found to change upon annealing, suggesting that structural relaxation of the amorphous SiC occurred. Good agreement was obtained between the simulated and experimentally measured radial distribution functions.
authors.affiliation: The Institute of Scientific and Industrial Research, Osaka University, Osaka 567-0047, Japan.
authors.forename: Manabu
authors.initials: M
authors.lastname: Ishimaru
authors.forename: In-Tae
authors.initials: IT
authors.lastname: Bae
authors.forename: Yoshihiko
authors.initials: Y
authors.lastname: Hirotsu
authors.forename: Syo
authors.initials: S
authors.lastname: Matsumura
authors.forename: Kurt E
authors.initials: KE
authors.lastname: Sickafus