Self-diffusion of (31)Si and (71)Ge in relaxed Si(0.20)Ge(0.80) layers.
Self-diffusion of implanted (31)Si and (71)Ge in relaxed Si(0.20)Ge(0.80) layers has been studied in the temperature range 730-950 degrees C by means of a modified radiotracer technique. The temperature dependences of the diffusion coefficients were found to be Arrhenius-type with activation enthalpies of 3.6 eV and 3.5 eV and preexponential factors of 7.5 x 10(-3) m(2) s(-1) and 8.1 x 10(-3) m(2) s(-1) for (31)Si and (71)Ge , respectively. These results suggest that, as in Ge, in Si(0.20)Ge(0.80) both (31)Si and (71)Ge diffuse via a vacancy mechanism. Since in Si(0.20)Ge(0.80) (71)Ge diffuses only slightly faster than (31)Si , in self-diffusion studies on Si-Ge (71)Ge radioisotopes may be used as substitutes for the "uncomfortably" short-lived (31)Si radiotracer atoms.
Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40351 Jyväskylä, Finland. pauli.laitinen@phys.jyu.fi
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P
Laitinen
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Strohm
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Huikari
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Nieminen
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Voss
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Grodon
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Riihimäki
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Kummer
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Aystö
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Dendooven
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Räisänen
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Frank