Random piezoelectric field in real [001]-oriented strain-relaxed semiconductor heterostructures.
We work out a theory of piezoelectricity in an actual semiconductor heterostructure which is composed of a lattice-mismatched zinc-blende layer grown on a [001]-oriented substrate. In contrast to earlier theories, we predict a large density of fixed bulk piezoelectric charges, which are induced by strain fluctuations connected with interface roughness. The piezoelectric charges create a high electric field. The random piezoelectric field presents a conceptually new important scattering mechanism. The system of charge carriers in such a heterostructure becomes strongly disordered and includes generally both free electron-hole pairs near the interface and excitons far from it.
Quang
Doan Nhat
DN
Center for Theoretical Physics, National Center for Science and Technology, P.O. Box 429, Boho, Hanoi 10000, Vietnam.
Tuoc
Vu Ngoc
VN
Tung
Nguyen Huyen
NH
Huan
Tran Doan
TD