Random piezoelectric field in real [001]-oriented strain-relaxed semiconductor heterostructures.
We work out a theory of piezoelectricity in an actual semiconductor heterostructure which is composed of a lattice-mismatched zinc-blende layer grown on a [001]-oriented substrate. In contrast to earlier theories, we predict a large density of fixed bulk piezoelectric charges, which are induced by strain fluctuations connected with interface roughness. The piezoelectric charges create a high electric field. The random piezoelectric field presents a conceptually new important scattering mechanism. The system of charge carriers in such a heterostructure becomes strongly disordered and includes generally both free electron-hole pairs near the interface and excitons far from it.
Center for Theoretical Physics, National Center for Science and Technology, P.O. Box 429, Boho, Hanoi 10000, Vietnam.
Doan Nhat
DN
Quang
Vu Ngoc
VN
Tuoc
Nguyen Huyen
NH
Tung
Tran Doan
TD
Huan