Resistance and resistance fluctuations in random resistor networks under biased percolation.
We consider a two-dimensional random resistor network (RRN) in the presence of two competing biased processes consisting of the breaking and recovering of elementary resistors. These two processes are driven by the joint effects of an electrical bias and of the heat exchange with a thermal bath. The electrical bias is set up by applying a constant voltage or, alternatively, a constant current. Monte Carlo simulations are performed to analyze the network evolution in the full range of bias values. Depending on the bias strength, electrical failure or steady state are achieved. Here we investigate the steady state of the RRN focusing on the properties of the non-Ohmic regime. In constant-voltage conditions, a scaling relation is found between <R>/<R>(0) and V/V(0), where <R> is the average network resistance, <R>(0) the linear regime resistance, and V0 the threshold value for the onset of nonlinearity. A similar relation is found in constant-current conditions. The relative variance of resistance fluctuations also exhibits a strong nonlinearity whose properties are investigated. The power spectral density of resistance fluctuations presents a Lorentzian spectrum and the amplitude of fluctuations shows a significant non-Gaussian behavior in the prebreakdown region. These results compare well with electrical breakdown measurements in thin films of composites and of other conducting materials.
INFM - National Nanotechnology Laboratory, Dipartimento di Ingegneria dell'Innovazione, Università di Lecce, Via Arnesano, I-73100 Lecce, Italy. cecilia.pennetta@unile.it
Cecilia
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Pennetta
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Reggiani
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Trefán
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Alfinito