title: A complementary-metal-oxide-semiconductor-field-effect-transistor-compatible atomic force microscopy tip fabrication process and integrated atomic force microscopy cantilevers fabricated with this process.
abstract: A complementary-metal-oxide-semiconductor-field-effect-transistor-compatible process for the fabrication of atomic force microscopy cantilevers with integrated tips has been developed. For the first time, the tips are fabricated after the completion of the regular complementary metal-oxide-semiconductor-field-effect-transistor fabrication process sequence. On-chip circuit components, such as piezoresistive deflection sensors, deflection actuators, and amplifiers, are fabricated on the mirror-polished surface of the wafer, ensuring optimal performance. The tip fabrication process is based on anisotropic silicon etching at low temperature using a tetramethylammonium hydroxide solution. The anisotropic etching process has been optimized to ensure process controllability. Using the described process, complementary-metal-oxide-semiconductor-field-effect-transistor-based cantilevers with piezoresistive deflection sensors and integrated tips have been successfully fabricated. Force-distance curves and scanning images in constant-force mode have been recorded.
authors.affiliation: Physical Electronics Laboratory, ETH Zurich, Hoenggerberg, Switzerland. m-ono@amc.toshiba.co.jp
authors.forename: Mizuki
authors.initials: M
authors.lastname: Ono
authors.forename: Dirk
authors.initials: D
authors.lastname: Lange
authors.forename: Oliver
authors.initials: O
authors.lastname: Brand
authors.forename: Christoph
authors.initials: C
authors.lastname: Hagleitner
authors.forename: Henry
authors.initials: H
authors.lastname: Baltes