title: High carrier mobility in single-crystal plasma-deposited diamond.
abstract: Room-temperature drift mobilities of 4500 square centimeters per volt second for electrons and 3800 square centimeters per volt second for holes have been measured in high-purity single-crystal diamond grown using a chemical vapor deposition process. The low-field drift mobility values were determined by using the time-of-flight technique on thick, intrinsic, freestanding diamond plates and were verified by current-voltage measurements on p-i junction diodes. The improvement of the electronic properties of single-crystal diamond and the reproducibility of those properties are encouraging for research on, and development of, high-performance diamond electronics.
authors.affiliation: ABB Group Services Center, Corporate Research, Nanotechnology and Innovative Materials Group, Västerås, Sweden. jan.isberg@angstrom.uu.se
authors.forename: Jan
authors.initials: J
authors.lastname: Isberg
authors.forename: Johan
authors.initials: J
authors.lastname: Hammersberg
authors.forename: Erik
authors.initials: E
authors.lastname: Johansson
authors.forename: Tobias
authors.initials: T
authors.lastname: Wikström
authors.forename: Daniel J
authors.initials: DJ
authors.lastname: Twitchen
authors.forename: Andrew J
authors.initials: AJ
authors.lastname: Whitehead
authors.forename: Steven E
authors.initials: SE
authors.lastname: Coe
authors.forename: Geoffrey A
authors.initials: GA
authors.lastname: Scarsbrook