title: Surface potential contrasts between silicon surfaces covered and uncovered with an organosilane self-assembled monolayer.
abstract: Surface potentials of Si substrates covered with a organosilane self-assembled monolayers (SAMs) were measured with reference to the substrate uncovered with the SAM using Kelvin probe force microscopy. Based on a photolithographic technique, the reference surface was prepared in a micrometer scale on each of the samples. SAMs were prepared from n-octadecyltrimethoxysilane [ODS: CH3(CH2)17Si(OCH3)3], 3,3,3-trifluoropropyltrimethoxysilane [FAS3: CF3(CH2)2Si(OCH3)3], heptadecafluoro-1,1,2,2-tetahydro-decyl-1-trimethoxysilane [FAS17: CF3(CF2)7(CH2)2Si(OCH3)3] or n-(6-aminohexyl) aminopropyltrimethoxysilane [AHAPS: H2N(CH2)6NH(CH2)3Si(OCH3)3) by chemical vapor deposition. Potentials of the surfaces covered with ODS-, FAS3- and FAS17-SAMs became more negative than the uncovered Si substrate, while the surface covered with AHAPS-SAM showed a more positive surface potential than the reference. The potential contrasts of these SAMs to the reference were -25, -170, -225 and +50 mV for ODS-, FAS3-, FAS17- and AHAPS-SAMs, respectively. These results almost agreed with potentials expected from the dipole moments of the corresponding precursor molecules estimated by ab initio molecular orbital calculation, except for FAS3-SAM. Despite FAS3 molecule having a larger dipole moment than FAS17 molecule, the surface potential contrast of FAS3-SAM was smaller than that of FAS17-SAM, since surface coverage of FAS3-SAM was relatively incomplete compared with the other SAMs.
authors.affiliation: Department of Materials Processing Engineering, Graduate School of Engineering, Nagoya University, Chikusa, Japan.
authors.forename: Kazuyuki
authors.initials: K
authors.lastname: Hayashi
authors.forename: Nagahiro
authors.initials: N
authors.lastname: Saito
authors.forename: Hiroyuki
authors.initials: H
authors.lastname: Sugimura
authors.forename: Osamu
authors.initials: O
authors.lastname: Takai
authors.forename: Nobuyuki
authors.initials: N
authors.lastname: Nakagiri