title: Reduction of spin injection efficiency by interface defect spin scattering in ZnMnSe/AlGaAs-GaAs spin-polarized light-emitting diodes.
abstract: We report the first experimental demonstration that interface microstructure limits diffusive electrical spin-injection efficiency across heteroepitaxial interfaces. An inverse correlation be-tween spin-polarized electron injection efficiency and interface defect density is demonstrated for ZnMnSe/AlGaAs-GaAs spin-polarized light-emitting diodes that exhibit quantum well spin polarizations up to 85%. A theoretical treatment shows that the suppression of spin injection due to interface defects results from the contribution of the defect potential to the spin-orbit interaction, which increases the spin-flip scattering.
authors.affiliation: Naval Research Laboratory, Washington, DC 20375, USA.
authors.forename: R M
authors.initials: RM
authors.lastname: Stroud
authors.forename: A T
authors.initials: AT
authors.lastname: Hanbicki
authors.forename: Y D
authors.initials: YD
authors.lastname: Park
authors.forename: G
authors.initials: G
authors.lastname: Kioseoglou
authors.forename: A G
authors.initials: AG
authors.lastname: Petukhov
authors.forename: B T
authors.initials: BT
authors.lastname: Jonker
authors.forename: G
authors.initials: G
authors.lastname: Itskos
authors.forename: A
authors.initials: A
authors.lastname: Petrou