title: Relaxation and dephasing of multiexcitons in semiconductor quantum dots.
abstract: We measure the dephasing time of ground-state excitonic transitions in InGaAs quantum dots under electrical injection in the temperature range from 10 to 70 K. Electrical injection into the barrier region results in a pure dephasing of the excitonic transitions. Once the injected carriers fill the electronic ground state, the biexciton to exciton transition is probed and a correlation of the exciton and biexciton phonon scattering mechanisms is found. Additional filling of the excited states creates multiexcitons that show a fast dephasing due to population relaxation.
authors.affiliation: Experimentelle Physik IIb, Universität Dortmund, Otto-Hahn Strasse 4, D-44221 Dortmund, Germany.
authors.forename: P
authors.initials: P
authors.lastname: Borri
authors.forename: W
authors.initials: W
authors.lastname: Langbein
authors.forename: S
authors.initials: S
authors.lastname: Schneider
authors.forename: U
authors.initials: U
authors.lastname: Woggon
authors.forename: R L
authors.initials: RL
authors.lastname: Sellin
authors.forename: D
authors.initials: D
authors.lastname: Ouyang
authors.forename: D
authors.initials: D
authors.lastname: Bimberg