Relaxation and dephasing of multiexcitons in semiconductor quantum dots.
We measure the dephasing time of ground-state excitonic transitions in InGaAs quantum dots under electrical injection in the temperature range from 10 to 70 K. Electrical injection into the barrier region results in a pure dephasing of the excitonic transitions. Once the injected carriers fill the electronic ground state, the biexciton to exciton transition is probed and a correlation of the exciton and biexciton phonon scattering mechanisms is found. Additional filling of the excited states creates multiexcitons that show a fast dephasing due to population relaxation.
Borri
P
P
Experimentelle Physik IIb, Universität Dortmund, Otto-Hahn Strasse 4, D-44221 Dortmund, Germany.
Langbein
W
W
Schneider
S
S
Woggon
U
U
Sellin
R L
RL
Ouyang
D
D
Bimberg
D
D