title: Hyperfine structure of the electron spin resonance of phosphorus-doped Si nanocrystals.
abstract: Electronic states of P donors in Si nanocrystals (nc-Si) embedded in insulating glass matrices have been studied by electron spin resonance. Doping of P donors into nc-Si was demonstrated by the observation of optical absorption in the infrared region due to intraconduction band transitions. P hyperfine structure (hfs) was successfully observed at low temperatures. The observed splitting of the hfs was found to be much larger than that of the bulk Si:P and depended strongly on the size of nc-Si. The observed strong size dependence indicates that the enhancement of the hyperfine splitting is caused by the quantum confinement of P donors in nc-Si.
authors.affiliation: Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan.
authors.forename: Minoru
authors.initials: M
authors.lastname: Fujii
authors.forename: Atsushi
authors.initials: A
authors.lastname: Mimura
authors.forename: Shinji
authors.initials: S
authors.lastname: Hayashi
authors.forename: Yoshiaki
authors.initials: Y
authors.lastname: Yamamoto
authors.forename: Kouichi
authors.initials: K
authors.lastname: Murakami