Optically driven spin memory in n-doped InAs-GaAs quantum dots.
We show that the spin state of the resident electron in an n-doped self-assembled InAs-GaAs quantum dot can be written and read using nonresonant, circularly polarized optical pumping. A simple theoretical model is presented and accounts for the remarkable dynamics producing counterpolarized photoluminescence.
Cortez
S
S
Laboratoire de Physique de la Matière Condensée de l'Ecole Normale Supérieure, 24 rue Lhomond, 75005 Paris, France.
Krebs
O
O
Laurent
S
S
Senes
M
M
Marie
X
X
Voisin
P
P
Ferreira
R
R
Bastard
G
G
Gérard
J-M
JM
Amand
T
T