Hyperfine structure of the electron spin resonance of phosphorus-doped Si nanocrystals.
Electronic states of P donors in Si nanocrystals (nc-Si) embedded in insulating glass matrices have been studied by electron spin resonance. Doping of P donors into nc-Si was demonstrated by the observation of optical absorption in the infrared region due to intraconduction band transitions. P hyperfine structure (hfs) was successfully observed at low temperatures. The observed splitting of the hfs was found to be much larger than that of the bulk Si:P and depended strongly on the size of nc-Si. The observed strong size dependence indicates that the enhancement of the hyperfine splitting is caused by the quantum confinement of P donors in nc-Si.
Fujii
Minoru
M
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan.
Mimura
Atsushi
A
Hayashi
Shinji
S
Yamamoto
Yoshiaki
Y
Murakami
Kouichi
K