title: Optically driven spin memory in n-doped InAs-GaAs quantum dots.
abstract: We show that the spin state of the resident electron in an n-doped self-assembled InAs-GaAs quantum dot can be written and read using nonresonant, circularly polarized optical pumping. A simple theoretical model is presented and accounts for the remarkable dynamics producing counterpolarized photoluminescence.
authors.affiliation: Laboratoire de Physique de la Matière Condensée de l'Ecole Normale Supérieure, 24 rue Lhomond, 75005 Paris, France.
authors.forename: S
authors.initials: S
authors.lastname: Cortez
authors.forename: O
authors.initials: O
authors.lastname: Krebs
authors.forename: S
authors.initials: S
authors.lastname: Laurent
authors.forename: M
authors.initials: M
authors.lastname: Senes
authors.forename: X
authors.initials: X
authors.lastname: Marie
authors.forename: P
authors.initials: P
authors.lastname: Voisin
authors.forename: R
authors.initials: R
authors.lastname: Ferreira
authors.forename: G
authors.initials: G
authors.lastname: Bastard
authors.forename: J-M
authors.initials: JM
authors.lastname: Gérard
authors.forename: T
authors.initials: T
authors.lastname: Amand