title: Atomic structure observation of silicon carbide using HRTEM.
abstract: Atomic-resolution high-resolution high-voltage transmission electron microscopy was applied to the chemical structure analysis of silicon carbide. Each atomic column was imaged in dark contrast. Silicon and carbon were distinguished from each other in image contrast, i.e. silicon appeared in darker contrast and carbon appeared in lighter contrast. For the projected potential image to provide chemical structure information, it was estimated that the specimen thickness needs to be less than 5 nm. The precise atomic columnar site was determined by using the maximum entropy method.
authors.affiliation: Department of Materials Science, Faculty of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan. takuma@emc.t.u-tokyo.ac.jp
authors.forename: Eriko
authors.initials: E
authors.lastname: Takuma
authors.forename: Hideki
authors.initials: H
authors.lastname: Ichinose
authors.forename: Fu-Rong
authors.initials: FR
authors.lastname: Chen