Element specific surface reconstructions of islands during surfactant-mediated growth on Si (111).
The early stages of surfactant- (As, Sb) mediated homoepitaxial growth on Si (111) are examined by scanning tunneling microscopy and extensive ab initio calculations of Si(n) clusters (n</=12). The results reveal the different microscopic behavior of the two surfactants: On As-covered Si (111), one exclusively finds two-dimensional islands with double-layer height which show the (1 x 1) terrace structure. On Sb-covered Si (111), the islands show two different reconstructions: at the rim of the islands a (1 x 1) structure appears, while in the center the (square root 3 x square root 3) terrace structure is observed.
Antons
A
A
Institut für Festkörperforschung, Forschungszentrum Jülich, D-52425 Jülich, Germany.
Schroeder
K
K
Voigtländer
B
B
Cherepanov
V
V
Berger
R
R
Blügel
S
S