title: Element specific surface reconstructions of islands during surfactant-mediated growth on Si (111).
abstract: The early stages of surfactant- (As, Sb) mediated homoepitaxial growth on Si (111) are examined by scanning tunneling microscopy and extensive ab initio calculations of Si(n) clusters (n</=12). The results reveal the different microscopic behavior of the two surfactants: On As-covered Si (111), one exclusively finds two-dimensional islands with double-layer height which show the (1 x 1) terrace structure. On Sb-covered Si (111), the islands show two different reconstructions: at the rim of the islands a (1 x 1) structure appears, while in the center the (square root 3 x square root 3) terrace structure is observed.
authors.affiliation: Institut für Festkörperforschung, Forschungszentrum Jülich, D-52425 Jülich, Germany.
authors.forename: A
authors.initials: A
authors.lastname: Antons
authors.forename: K
authors.initials: K
authors.lastname: Schroeder
authors.forename: B
authors.initials: B
authors.lastname: Voigtländer
authors.forename: V
authors.initials: V
authors.lastname: Cherepanov
authors.forename: R
authors.initials: R
authors.lastname: Berger
authors.forename: S
authors.initials: S
authors.lastname: Blügel