Laser action of trions in a semiconductor quantum well.
We report on the observation of optical gain and lasing at the trion transition of n-doped ZnSe quantum wells. Specifically, the (stimulated) emission-absorption net rate of this transition is controlled by the difference of trion and electron occupation in momentum space. As the mass of the trion is larger than that of the electron, gain occurs on the low-energy side of the line center without degeneracy and inversion in the total particle numbers. The scenario is reminiscent of a three-level system. At higher injection levels, carrier heating sets on and limits the available gain to values of about 10(4) cm(-1).
Puls
J
J
Institut für Physik der Humboldt-Universität zu Berlin, 10115 Berlin, Germany.
Mikhailov
G V
GV
Henneberger
F
F
Yakovlev
D R
DR
Waag
A
A
Faschinger
W
W