Influence of silicon dioxide-silicon interface trap charges on the performance of monolithic metal-zinc oxide-silicon nitride-silicon dioxide-silicon convolver.
An enhancement in the convolution efficiency is obtained by annihilating the SiO2-Si interface trap charges in the metal-ZnO-Si3N4-SiO2-Si convolver structure. The annealing process uses a source of hydrogen created underneath the SiO2-Si interface by implanting H3(+) ion followed by rapid thermal anneal of 5s at 900 degrees C. The silicon nitride layer is inducted to protect ZnO films from hydrogen influx during low temperature oxygen anneal.
Panwar
Brishbhan S
BS