title: Origin of the residual acceptor ground-state splitting in silicon.
abstract: The residual ground-state splitting of acceptors in high-quality silicon has been studied intensely by different experimental techniques for several decades. Recently, photoluminescence studies of isotopically pure silicon revealed the ground-state splitting to result from the random distribution of isotopes in natural silicon. Here we present a new model that explains these surprising experimental results, and discuss the implications for acceptor ground-state splittings observed in other isotopically mixed semiconductors, as well as for the acceptor ground state in semiconductor alloys.
authors.affiliation: Department of Physics, Simon Fraser University, Burnaby, British Columbia, Canada V5A 1S6.
authors.forename: D
authors.initials: D
authors.lastname: Karaiskaj
authors.forename: G
authors.initials: G
authors.lastname: Kirczenow
authors.forename: M L W
authors.initials: ML
authors.lastname: Thewalt
authors.forename: R
authors.initials: R
authors.lastname: Buczko
authors.forename: M
authors.initials: M
authors.lastname: Cardona