Quasiballistic magnetization reversal.
We demonstrate a quasiballistic switching of the magnetization in a microscopic magnetoresistive memory cell. By means of time resolved magnetotransport, we follow the large angle precession of the free layer magnetization of a spin valve cell upon application of transverse magnetic field pulses. Stopping the field pulse after a 180 degrees precession rotation leads to magnetization reversal with reversal times as short as 165 ps. This switching mode represents the fundamental ultrafast limit of field induced magnetization reversal.
Schumacher
H W
HW
Institut d'Electronique Fondamentale, UMR 8622 CNRS, Université Paris Sud, Bâtiment 220, 91405 Orsay, France. schumach@ief.u-psud.fr
Chappert
C
C
Sousa
R C
RC
Freitas
P P
PP
Miltat
J
J