title: Using metallic interlayers to stabilize abrupt, epitaxial metal-metal interfaces.
abstract: An approach is described for stabilizing metal-metal epitaxial interfaces using a thin metallic interlayer. Rutherford backscattering and channeling techniques along with low-energy electron diffraction and keV He+ ion backscattering are used to demonstrate that an atomically thin layer of Ti deposited at the Fe-Al interface, a system well known for considerable intermixing at room temperature, forms a thin interface alloy that prevents interdiffusion and improves epitaxial growth of Fe on Al(100). The structure is stable up to about 200 degrees C.
authors.affiliation: Physics Department, Montana State University, Bozeman, Montana 59717, USA.
authors.forename: C V
authors.initials: CV
authors.lastname: Ramana
authors.forename: P
authors.initials: P
authors.lastname: Masse
authors.forename: R J
authors.initials: RJ
authors.lastname: Smith
authors.forename: Bum-Sik
authors.initials: BS
authors.lastname: Choi