Alternating layer and island growth of Pb on Si by spontaneous quantum phase separation.
Real-time in situ x-ray studies of continuous Pb deposition on Si(111)-(7x7) at 180 K reveal an unusual growth behavior. A wetting layer forms first to cover the entire surface. Then islands of a fairly uniform height of about five monolayers form on top of the wetting layer and grow to fill the surface. The growth then switches to a layer-by-layer mode upon further deposition. This behavior of alternating layer and island growth can be attributed to spontaneous quantum phase separation based on a first-principles calculation of the system energy.
Hong
Hawoong
H
Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 S. Goodwin Avenue, Urbana, Illinois 61801-2902, USA.
Wei
C-M
CM
Chou
M Y
MY
Wu
Z
Z
Basile
L
L
Chen
H
H
Holt
M
M
Chiang
T-C
TC