title: Self-aligned, vertical-channel, polymer field-effect transistors.
abstract: The manufacture of high-performance, conjugated polymer transistor circuits on flexible plastic substrates requires patterning techniques that are capable of defining critical features with submicrometer resolution. We used solid-state embossing to produce polymer field-effect transistors with submicrometer critical features in planar and vertical configurations. Embossing is used for the controlled microcutting of vertical sidewalls into polymer multilayer structures without smearing. Vertical-channel polymer field-effect transistors on flexible poly(ethylene terephthalate) substrates were fabricated, in which the critical channel length of 0.7 to 0.9 micrometers was defined by the thickness of a spin-coated insulator layer. Gate electrodes were self-aligned to minimize overlap capacitance by inkjet printing that used the embossed grooves to define a surface-energy pattern.
authors.affiliation: Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, UK.
authors.forename: Natalie
authors.initials: N
authors.lastname: Stutzmann
authors.forename: Richard H
authors.initials: RH
authors.lastname: Friend
authors.forename: Henning
authors.initials: H
authors.lastname: Sirringhaus