title: Microscopic structure of Er-related optically active centers in crystalline silicon.
abstract: A successful observation and analysis of the Zeeman effect on the lambda approximately 1.54 microm photoluminescence band in Er-doped crystalline MBE-grown silicon are presented. The symmetry of the dominant optically active centers is conclusively established as orthorhombic I(C(2v)) with g axially approximately 18.39 and g radially approximately 0. In this way the long standing puzzle as regards the paramagnetism of optically active Er-related centers in silicon is settled. Preferential generation of a single type of an optically active Er-related center confirmed in this study is essential for photonic applications of Si:Er.
authors.affiliation: Van der Waals-Zeeman Institute, University of Amsterdam, Valckenierstraat 65, NL-1018 XE Amsterdam, The Netherlands.
authors.forename: N Q
authors.initials: NQ
authors.lastname: Vinh
authors.forename: H
authors.initials: H
authors.lastname: Przybylińska
authors.forename: Z F
authors.initials: ZF
authors.lastname: Krasil'nik
authors.forename: T
authors.initials: T
authors.lastname: Gregorkiewicz