title: Resistivity of dilute 2D electrons in an undoped GaAs heterostructure.
abstract: We report resistivity measurements from 0.03 to 10 K in a dilute high mobility 2D electron system. Using an undoped GaAs/AlGaAs heterojunction in a gated field-effect transistor geometry, a wide range of densities, 0.16 x 10(10) to 7.5 x 10(10) cm(-2), are explored. For high densities, the results are quantitatively shown to be due to scattering by acoustic phonons and impurities. In an intermediate range of densities, a peak in the resistivity is observed for temperatures below 1 K. This nonmonotonic resistivity can be understood by considering the known scattering mechanisms of phonons, bulk, and interface ionized impurities. Still lower densities appear insulating to the lowest temperature measured.
authors.affiliation: Sandia National Laboratories, Albuquerque, New Mexico 87185, USA.
authors.forename: M P
authors.initials: MP
authors.lastname: Lilly
authors.forename: J L
authors.initials: JL
authors.lastname: Reno
authors.forename: J A
authors.initials: JA
authors.lastname: Simmons
authors.forename: I B
authors.initials: IB
authors.lastname: Spielman
authors.forename: J P
authors.initials: JP
authors.lastname: Eisenstein
authors.forename: L N
authors.initials: LN
authors.lastname: Pfeiffer
authors.forename: K W
authors.initials: KW
authors.lastname: West
authors.forename: E H
authors.initials: EH
authors.lastname: Hwang
authors.forename: S
authors.initials: S
authors.lastname: Das Sarma