Using metallic interlayers to stabilize abrupt, epitaxial metal-metal interfaces.
An approach is described for stabilizing metal-metal epitaxial interfaces using a thin metallic interlayer. Rutherford backscattering and channeling techniques along with low-energy electron diffraction and keV He+ ion backscattering are used to demonstrate that an atomically thin layer of Ti deposited at the Fe-Al interface, a system well known for considerable intermixing at room temperature, forms a thin interface alloy that prevents interdiffusion and improves epitaxial growth of Fe on Al(100). The structure is stable up to about 200 degrees C.
Ramana
C V
CV
Physics Department, Montana State University, Bozeman, Montana 59717, USA.
Masse
P
P
Smith
R J
RJ
Choi
Bum-Sik
BS