title: Imaging of a single atomic column in silicon grain boundary.
abstract: Atomic resolution high voltage electron microscopy was applied in investigations of the atomic structure of [112] sigma3 CSL grain boundary of silicon. Images of the grain boundary, viewed in the < 110 > direction, showed two types of dark spots. One type was rod shaped, which represented an atomic pair aligned in the < 111 > direction. The other was a small round spot, which represented a single atomic column in the grain boundary. The atomic structure of [112] sigma3 CSL grain boundary was directly shown from the atomic-structure image.
authors.affiliation: Department of Materials Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan. hsawada@jeol.co.jp
authors.forename: Hidetaka
authors.initials: H
authors.lastname: Sawada
authors.forename: Hideki
authors.initials: H
authors.lastname: Ichinose
authors.forename: Masanori
authors.initials: M
authors.lastname: Kohyama