title: Resistance noise scaling in a dilute two-dimensional hole system in GaAs.
abstract: We have measured the resistance noise of a two-dimensional (2D) hole system in a high mobility GaAs quantum well, around the 2D metal-insulator transition (MIT) at zero magnetic field. The normalized noise power S(R)/R(2) increases strongly when the hole density p(s) is decreased, increases slightly with temperature (T) at the largest densities, and decreases strongly with T at low p(s). The noise scales with the resistance, S(R)/R(2) approximately R2.4, as for a second order phase transition such as a percolation transition. The p(s) dependence of the conductivity is consistent with a critical behavior for such a transition, near a density p(*) which is lower than the observed MIT critical density p(c).
authors.affiliation: Service de Physique de l'Etat Condensé, CEA/DSM, CE Saclay, F-91191 Gif-sur-Yvette, France.
authors.forename: R
authors.initials: R
authors.lastname: Leturcq
authors.forename: D
authors.initials: D
authors.lastname: L'Hôte
authors.forename: R
authors.initials: R
authors.lastname: Tourbot
authors.forename: C J
authors.initials: CJ
authors.lastname: Mellor
authors.forename: M
authors.initials: M
authors.lastname: Henini