title: Combined atomic force microscopy and scanning tunneling microscopy imaging of cross-sectioned GaN light-emitting diodes.
abstract: Cross-sectional scanning tunneling microscopy (STM) was combined with atomic force microscopy (AFM) over the same area to characterize a cross-sectioned GaN light emitting diode. Because GaN is typically grown on a non-native substrate and also forms a wurtzite crystal structure, a cryogenic cleaving technique was developed to generate smooth surfaces. The depletion region surrounding the p-n junction was clearly identified using STM. Furthermore, by imaging under multiple sample biases, distinctions between the n-doped and p-doped GaN could be made.
authors.affiliation: North Carolina State University, Analytical Instrumentation Facility, Raleigh, North Carolina, USA. benderjw@engr.sc.edu
authors.forename: J W
authors.initials: JW
authors.lastname: Bender
authors.forename: M E
authors.initials: ME
authors.lastname: Salmon
authors.forename: P E
authors.initials: PE
authors.lastname: Russell