The effects of different heat treatment and atmospheres on the NMR signal and structure of TiO2-ZrO2-SiO2 sol-gel materials.
The effects of different heat treatment schemes (i.e. successively or directly heated to particular temperatures) and atmospheres (air or nitrogen) on the solid-state NMR spectra obtained from (TiO(2))(0.15)(ZrO(2))(0.05)(SiO(2))(0.80) sol-gel materials are investigated. A combination of 1H, 13C, 17O and 29Si NMR is used. 29Si MAS NMR indicates that the extent of condensation of the silica-based network strongly depends on the maximum temperature the sample has experienced, but the condensation is largely independent of the details of the heat treatment scheme and atmosphere used. For sol-gel produced silicate-based materials the results show that the equilibrium structure at each temperature is reached rapidly compared to the time (2h) spent at that temperature. The 17O NMR results confirm that a nitrogen atmosphere does significantly reduce loss of 17O from the structure but care must be taken since there could be differential loss of 17O from the regions having different local structural characteristics.
Gunawidjaja
P N
PN
Department of Physics, University of Warwick, Coventry CV4 7AL, UK.
Holland
M A
MA
Mountjoy
G
G
Pickup
D M
DM
Newport
R J
RJ
Smith
M E
ME
D001272:Atmosphere / Q000737:chemistry; D002247:Carbon Isotopes; D005782:Gels / Q000737:chemistry*; D006358:Hot Temperature; D007554:Isotopes; D009682:Magnetic Resonance Spectroscopy / Q000379:methods*; D008422:Materials Testing / Q000379:methods; D009584:Nitrogen / Q000737:chemistry; D010103:Oxygen Isotopes; D011312:Pressure; D011522:Protons; D012680:Sensitivity and Specificity; D012825:Silicon; D012822:Silicon Dioxide / Q000737:chemistry*; D014025:Titanium / Q000737:chemistry*; D015040:Zirconium / Q000737:chemistry*
D002247:Carbon Isotopes; D005782:Gels; D007554:Isotopes; D010103:Oxygen Isotopes; D011522:Protons; C009495:titanium dioxide; D012822:Silicon Dioxide; D015040:Zirconium; D014025:Titanium; D009584:Nitrogen; C028541:zirconium oxide; D012825:Silicon