Direct determination of strain and composition profiles in SiGe islands by anomalous x-Ray diffraction at high momentum transfer.
Anomalous x-ray scattering is employed for quantitative measurements of the Ge composition profile in islands on Si(001). The anomalous effect in SiGe is enhanced exploiting the dependence of the complex atomic form factors on the momentum transfer. Comparing the intensity ratios for x-ray energies below and close to the K edge of Ge at various Bragg reflections in the grazing incidence diffraction setup, the sensitivity for the Ge profile is considerably enhanced. The method is demonstrated for SiGe dome-shaped islands grown on Si(001). It is found that the composition inside the island changes rather abruptly, whereas the lattice parameter relaxes continuously.
Schülli
T U
TU
Institute for Semiconductor Physics, Johannes Kepler Universität Linz, A-4040 Linz, Austria.
Stangl
J
J
Zhong
Z
Z
Lechner
R T
RT
Sztucki
M
M
Metzger
T H
TH
Bauer
G
G