title: Alternating layer and island growth of Pb on Si by spontaneous quantum phase separation.
abstract: Real-time in situ x-ray studies of continuous Pb deposition on Si(111)-(7x7) at 180 K reveal an unusual growth behavior. A wetting layer forms first to cover the entire surface. Then islands of a fairly uniform height of about five monolayers form on top of the wetting layer and grow to fill the surface. The growth then switches to a layer-by-layer mode upon further deposition. This behavior of alternating layer and island growth can be attributed to spontaneous quantum phase separation based on a first-principles calculation of the system energy.
authors.affiliation: Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 S. Goodwin Avenue, Urbana, Illinois 61801-2902, USA.
authors.forename: Hawoong
authors.initials: H
authors.lastname: Hong
authors.forename: C-M
authors.initials: CM
authors.lastname: Wei
authors.forename: M Y
authors.initials: MY
authors.lastname: Chou
authors.forename: Z
authors.initials: Z
authors.lastname: Wu
authors.forename: L
authors.initials: L
authors.lastname: Basile
authors.forename: H
authors.initials: H
authors.lastname: Chen
authors.forename: M
authors.initials: M
authors.lastname: Holt
authors.forename: T-C
authors.initials: TC
authors.lastname: Chiang