1.5-microm monolithic GaInNAs semiconductor saturable-absorber mode locking of an erbium fiber laser.
We present a new monolithic GaAs-based semiconductor saturable absorber operating at 1.55 microm. An epitaxially grown absorber mirror in a GaInNAs/GaAs material system was successfully used to mode lock an erbium-doped fiber laser. The GaInNAs material system possesses intriguing physical properties and provides great potential for lasers and nonlinear optical devices operating at the 1.3-1.55-microm wavelength range.
Okhotnikov
O G
OG
Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101, Tampere, Finland. oleg.okhotnikov@orc.tut.it
Jouhti
T
T
Konttinen
J
J
Karirinne
S
S
Pessa
M
M