Wavelength conversion of 1.53-microm-wavelength picosecond pulses in an ion-implanted multiple-quantum-well all-optical switch.
An ultrafast high-contrast all-optical switch produced from a metal-organic vapor phase epitaxy-grown wafer incorporating a 50-period InGaAsP/InGaAsP multiple-quantum-well (MQW) saturable absorber (SA) and a distributed Bragg reflector is described. Postgrowth implantation with 4-MeV nitrogen ions reduces the MQW free-carrier lifetime, and hence the switch recovery time, to 5.2 ps. Incorporation of the MQW SA in an optical cavity results in switching contrast ratios greater than 10 dB. The all-optical switch is used to perform wavelength conversion of 2-ps pulses.
Burr
E P
EP
Department of Electronic Engineering, University College London, Torrington Place, London WC1E 7JE, UK. eburr@ee.ucl.ac.uk
Pantouvaki
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M
Seeds
A J
AJ
Gwilliam
R M
RM
Pinches
S M
SM
Button
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