title: 1.5-microm monolithic GaInNAs semiconductor saturable-absorber mode locking of an erbium fiber laser.
abstract: We present a new monolithic GaAs-based semiconductor saturable absorber operating at 1.55 microm. An epitaxially grown absorber mirror in a GaInNAs/GaAs material system was successfully used to mode lock an erbium-doped fiber laser. The GaInNAs material system possesses intriguing physical properties and provides great potential for lasers and nonlinear optical devices operating at the 1.3-1.55-microm wavelength range.
authors.affiliation: Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101, Tampere, Finland. oleg.okhotnikov@orc.tut.it
authors.forename: O G
authors.initials: OG
authors.lastname: Okhotnikov
authors.forename: T
authors.initials: T
authors.lastname: Jouhti
authors.forename: J
authors.initials: J
authors.lastname: Konttinen
authors.forename: S
authors.initials: S
authors.lastname: Karirinne
authors.forename: M
authors.initials: M
authors.lastname: Pessa