title: Performance evaluation of a hand-held, semiconductor (CdZnTe)-based gamma camera.
abstract: We have designed and developed a small field of view gamma camera, the eZ SCOPE, based on use of a CdZnTe semiconductor. This device utilises proprietary signal processing technology and an interface to a computer-based imaging system. The purpose of this study was to evaluate the performance of the eZ scope in comparison with currently employed gamma camera technology. The detector is a single wafer of 5-mm-thick CdZnTe that is divided into a 16x16 array (256 pixels). The sensitive area of the detector is a square of dimension 3.2 cm. Two parallel-hole collimators are provided with the system and have a matching (256 hole) pattern to the CdZnTe detector array: a low-energy, high-resolution parallel-hole (LEHR) collimator fabricated of lead and a low-energy, high-sensitivity parallel-hole (LEHS) collimator fabricated of tungsten. Performance measurements and the data analysis were done according to the procedures of the NEMA standard. We also studied the long-term stability of the system with continuous use and variations in ambient temperature. Results were as follows. INTRINSIC ENERGY RESOLUTION: 8.6% FWHM at 141 keV.LINEARITY: There was excellent linearity between the observed photopeaks and the known gamma ray energies for the given isotopes. INTRINSIC SYSTEM UNIFORMITY: For the central field of view, the integral uniformity and the differential uniformity were, respectively, 1.6% and 1.3% with the LEHR collimator and 1.9% and 1.2% with the LEHS collimator. SYSTEM SPATIAL RESOLUTION: The FWHM measurements made at the surface of the collimator were 2.2 mm (LEHR) and 2.9 mm (LEHS).CONTRAST TEST: The average S/N ratios (i.e. counts in the irradiated pixel divided by counts in the surrounding pixels) for the inner ring pixels (8)/outer ring pixels (16) using the LEHS collimator and LEHR collimator were 3.2%/0.2% and 3.7%/0.3%, respectively. COUNT RATE CHARACTERISTICS: We could not determine the maximum count rate and the 20% loss count rate from these data because the plateau was not reached while using the solutions measured. SYSTEM SENSITIVITY: The average acquisitions were 11,052 cpm/MBq (LEHR) and 28,590 cpm/MBq (LEHS). TEMPERATURE DEPENDENCE: The system displayed minimum corresponding shift in cps with temperature changes in the measured temperature range. We designed and developed a semiconductor-based gamma camera using CdZnTe. The basic performance of this camera compares favourably with the existing gamma camera technology that is deployed in the medical field today. The most significant differences include the spatial resolution, sensitivity, high count rate characteristics and energy resolution. We believe that this device will be of value for a number of clinical applications including sentinel node detection and radiopharmaceutical-guided surgery.
authors.affiliation: Department of Radiology, School of Medicine, Yokohama City University, Kanagawa, Japan. packen@xb3.so-net.ne.jp
authors.forename: Aya
authors.initials: A
authors.lastname: Abe
authors.forename: Nobukazu
authors.initials: N
authors.lastname: Takahashi
authors.forename: Jin
authors.initials: J
authors.lastname: Lee
authors.forename: Takashi
authors.initials: T
authors.lastname: Oka
authors.forename: Kazuya
authors.initials: K
authors.lastname: Shizukuishi
authors.forename: Tatsuya
authors.initials: T
authors.lastname: Kikuchi
authors.forename: Tomio
authors.initials: T
authors.lastname: Inoue
authors.forename: Masao
authors.initials: M
authors.lastname: Jimbo
authors.forename: Hideki
authors.initials: H
authors.lastname: Ryuo
authors.forename: Chris
authors.initials: C
authors.lastname: Bickel
mesh_terms: D002104:Cadmium; D002138:Calibration; D004867:Equipment Design; D015902:Gamma Cameras / Q000592:standards*; D006801:Humans; D019047:Phantoms, Imaging; D012666:Semiconductors / Q000592:standards*; D012680:Sensitivity and Specificity; D013691:Tellurium; D015032:Zinc
chemical_list: D002104:Cadmium; D015032:Zinc; D013691:Tellurium