title: Giant planar Hall effect in epitaxial (Ga,Mn)as devices.
abstract: Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers when subjected to a swept, in-plane magnetic field. This giant planar Hall effect is 4 orders of magnitude greater than previously observed in metallic ferromagnets. This enables extremely sensitive measurements of the angle-dependent magnetic properties of (Ga,Mn)As. The magnetic anisotropy fields deduced from these measurements are compared with theoretical predictions.
authors.affiliation: Condensed Matter Physics 114-36, California Institute of Technology, Pasadena, California 91125, USA.
authors.forename: H X
authors.initials: HX
authors.lastname: Tang
authors.forename: R K
authors.initials: RK
authors.lastname: Kawakami
authors.forename: D D
authors.initials: DD
authors.lastname: Awschalom
authors.forename: M L
authors.initials: ML
authors.lastname: Roukes