Monolithic integration of dual-layer optics into broad-area semiconductor laser diodes.
A broad-area semiconductor laser diode with two monolithically integrated optical elements is presented. A 275-nm period detuned second-order diffraction grating on the p-doped side layer is combined with a refractive lens transferred into the GaAs substrate so that outcoupling and beam-shaping functions are decoupled. The high-power device produces a circular spot and demonstrates the potential of dual optics integration in broad-area semiconductor diodes.
Vaissié
Laurent
L
Microphotonics Laboratory, School of Optics/Center for Research and Education in Optics and Lasers, University of Central Florida, Orlando, Florida 32816-2700, USA.
Mohammed
Waleed
W
Johnson
Eric G
EG