title: Etchant solutions for the removal of Cu(0) in a supercritical CO2-based "dry" chemical mechanical planarization process for device fabrication.
abstract: The microelectronics industry is focused on increasing chip complexity, improving the density of electron carriers, and decreasing the dimensions of the interconnects into the sub-0.25 mum regime while maintaining high aspect ratios. Water-based chemical mechanical planarization or polishing (CMP) faces several technical and environmental challenges. Condensed CO2 has significant potential for replacing current CMP solvents as a "dry" etching medium because of its unique properties. In working toward a condensed CO2-based CMP process, we have successfully investigated the oxidation and chelation of solid copper metal in liquid and supercritical CO2 using ethyl peroxydicarbonate and a beta-diketone chelating agent.
authors.affiliation: Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599, USA.
authors.forename: Carol A
authors.initials: CA
authors.lastname: Bessel
authors.forename: Ginger M
authors.initials: GM
authors.lastname: Denison
authors.forename: Joseph M
authors.initials: JM
authors.lastname: DeSimone
authors.forename: James
authors.initials: J
authors.lastname: DeYoung
authors.forename: Stephen
authors.initials: S
authors.lastname: Gross
authors.forename: Cynthia K
authors.initials: CK
authors.lastname: Schauer
authors.forename: Pamela M
authors.initials: PM
authors.lastname: Visintin