Giant planar Hall effect in epitaxial (Ga,Mn)as devices.
Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers when subjected to a swept, in-plane magnetic field. This giant planar Hall effect is 4 orders of magnitude greater than previously observed in metallic ferromagnets. This enables extremely sensitive measurements of the angle-dependent magnetic properties of (Ga,Mn)As. The magnetic anisotropy fields deduced from these measurements are compared with theoretical predictions.
Tang
H X
HX
Condensed Matter Physics 114-36, California Institute of Technology, Pasadena, California 91125, USA.
Kawakami
R K
RK
Awschalom
D D
DD
Roukes
M L
ML