title: Low-energy electron diffraction study of the phase transition of Si(001) surface below 40 K.
abstract: The phase transition of Si(001) surface below 40 K was studied by low-energy electron diffraction (LEED). The temperature dependence of the intensities and widths of the quarter order diffraction spots and LEED intensity versus electron energy curves (I-V curves) were obtained in the temperature region from 20 to 300 K. While the spot intensities of the quarter order spots decrease and the widths broaden, the I-V curves do not change so much below 40 K. This clearly shows that a phase transition occurs from an ordered phase above 40 K to a disordered phase below 40 K.
authors.affiliation: Institute of Industrial Science, University of Tokyo, Meguro-ku, Tokyo 153-8505, Japan.
authors.forename: M
authors.initials: M
authors.lastname: Matsumoto
authors.forename: K
authors.initials: K
authors.lastname: Fukutani
authors.forename: T
authors.initials: T
authors.lastname: Okano