title: Spontaneous N incorporation onto a Si(100) surface.
abstract: Initial nitridation of the Si(100) surface is investigated using photoemission, ion-scattering and ab initio calculations. After dissociation of NO or NH3, nitrogen atoms are found to spontaneously form a stable, highly coordinated N[triple bond]Si(3) species even at room temperature. The majority of the N species is incorporated into the subsurface Si layers occupying an interstitial site, whose atomic structure and unique bonding mechanism is clarified through ab initio calculations. This unusual adsorption behavior elucidates the atomistic mechanism of initial silicon nitride formation on the surface and has important implication on the N-rich layer formation at the SiO(x)N(y)/Si interface.
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea.
authors.forename: J W
authors.initials: JW
authors.lastname: Kim
authors.forename: H W
authors.initials: HW
authors.lastname: Yeom
authors.forename: K J
authors.initials: KJ
authors.lastname: Kong
authors.forename: B D
authors.initials: BD
authors.lastname: Yu
authors.forename: D Y
authors.initials: DY
authors.lastname: Ahn
authors.forename: Y D
authors.initials: YD
authors.lastname: Chung
authors.forename: C N
authors.initials: CN
authors.lastname: Whang
authors.forename: H
authors.initials: H
authors.lastname: Yi
authors.forename: Y H
authors.initials: YH
authors.lastname: Ha
authors.forename: D W
authors.initials: DW
authors.lastname: Moon