Low-energy electron diffraction study of the phase transition of Si(001) surface below 40 K.
The phase transition of Si(001) surface below 40 K was studied by low-energy electron diffraction (LEED). The temperature dependence of the intensities and widths of the quarter order diffraction spots and LEED intensity versus electron energy curves (I-V curves) were obtained in the temperature region from 20 to 300 K. While the spot intensities of the quarter order spots decrease and the widths broaden, the I-V curves do not change so much below 40 K. This clearly shows that a phase transition occurs from an ordered phase above 40 K to a disordered phase below 40 K.
Matsumoto
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Institute of Industrial Science, University of Tokyo, Meguro-ku, Tokyo 153-8505, Japan.
Fukutani
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Okano
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