title: XRF and SIMS/SNMS analyses of BaxSr1-xTiO3 dielectrics.
abstract: The development of analytical tools and procedures for process control is a prerequisite for the integration of high permittivity and/or ferroelectric materials in CMOS devices. The thickness and composition of perovskite oxide films were determined by wavelength dispersive X-ray fluorescence analysis (XRF) with special emphasis on the ratio of the group-II elements to the Ti content, and a precision of 0.5% was achieved for a typical film thickness of 20-30 nm. Secondary ion mass spectrometry (SIMS) and sputtered neutrals mass spectrometry (SNMS) was used for depth profiling to determine film homogeneity and elemental interdiffusion at hetero-interfaces. Examples are given for Ba(x)Sr(1-x)TiO(3) and SrTiO(x) thin films which were grown in a prototype MOCVD production tool. No interdiffusion was observed for films grown at 600 degrees C on Pt electrodes in contrast to films grown directly on Si.
authors.affiliation: ZCH, Research Centre Jülich, 52425, Jülich, Germany. uwe.breuer@fz-juelich.de
authors.forename: U
authors.initials: U
authors.lastname: Breuer
authors.forename: W
authors.initials: W
authors.lastname: Krumpen
authors.forename: F
authors.initials: F
authors.lastname: Fitsilis