Breakdown transients in ultrathin gate oxides: transition in the degradation rate.
We report a sharp threshold at 4 V in the growth rate of breakdown spots in thin films of SiO2 on silicon. This provides some of the first information concerning the electronic structure of the breakdown spot.
Lombardo
S
S
Consiglio Nazionale delle Ricerche (CNR)-Istituto per la Microelettronica e Microsistemi (IMM), Sezione di Catania, Stradale Primosole, 50, 95121 Catania, Italy.
Stathis
J H
JH
Linder
B P
BP