Breakdown transients in ultrathin gate oxides: transition in the degradation rate.
We report a sharp threshold at 4 V in the growth rate of breakdown spots in thin films of SiO2 on silicon. This provides some of the first information concerning the electronic structure of the breakdown spot.
Consiglio Nazionale delle Ricerche (CNR)-Istituto per la Microelettronica e Microsistemi (IMM), Sezione di Catania, Stradale Primosole, 50, 95121 Catania, Italy.
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