title: Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor.
abstract: We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of approximately 106 and a field-effect mobility of approximately 80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.
authors.affiliation: Hosono Transparent ElectroActive Materials, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology (JST), 3-2-1 Sakado, Takatsu, Kawasaki 213-0012, Japan. nomura@lucid.msl.titech.ac.jp
authors.forename: Kenji
authors.initials: K
authors.lastname: Nomura
authors.forename: Hiromichi
authors.initials: H
authors.lastname: Ohta
authors.forename: Kazushige
authors.initials: K
authors.lastname: Ueda
authors.forename: Toshio
authors.initials: T
authors.lastname: Kamiya
authors.forename: Masahiro
authors.initials: M
authors.lastname: Hirano
authors.forename: Hideo
authors.initials: H
authors.lastname: Hosono