title: Optical and electrical properties of the wide gap, n-type semiconductors: ZnBi2O6 and MgBi2O6.
abstract: Characterization of polycrystalline samples of the trirutile oxides ZnBi2O6 and MgBi2O6 reveals temperature independent conductivity (0.4 and 0.01 S cm(-1)), a negative Seebeck coefficient (-0.035 and -0.025 mV K(-1)), and an optical band gap that falls at the low energy end of visible region (1.7 and 1.8 eV), this combination of attributes, indicating that these compounds are degenerate n-type semiconductors, has not previously been observed in a Bi(5+) oxide.
authors.affiliation: Dept. of Chemistry, Ohio State University, 100 West 18th Ave., Columbus, OH 43210-1185, USA.
authors.forename: Hiroshi
authors.initials: H
authors.lastname: Mizoguchi
authors.forename: Nattamai S P
authors.initials: NS
authors.lastname: Bhuvanesh
authors.forename: Patrick M
authors.initials: PM
authors.lastname: Woodward