title: SiCf-SiBC composites: microstructural investigations of the as-received material and creep tested composites under an oxidative environment.
abstract: SiCf-SiBC composites fabricated by Snecma Propulsion Solide (St Médard en Jalles, France) were investigated by SEM and HRTEM in the as-received state and after creep tests performed in air, in a temperature range 1423-1573 K, under 170 and 200 MPa. These composites are reinforced by Hi-Nicalon fibres (Nippon Carbon). A pyrocarbon interphase was first deposited on the fibres. The matrix was then deposited on the fibrous preform by several chemical vapour infiltrations (CVI). As a result the matrix is multilayered and based on the Si-B-C ternary system. This matrix is self-sealing: this is due to the presence of boron inducing the formation of a sealant glass if the material is heated in an oxidative environment. This glass will protect fibres and fibre/matrix interphases against oxidation. Hi-Nicalon fibres as well as the different matrix layers were studied by HRTEM and EDX. Some investigations were carried out on the creep-tested specimens in order to characterize modifications observed in the different constituents of the composites, particularly at the interfaces between the matrix layers and at the fibre/matrix interface. It was shown that several matrix layers crystallized during the creep tests. Moreover, a thin silica layer was observed at the pyrocarbon/matrix interfaces. Differences between the behaviour of the same type of material creep tested under neutral atmosphere are discussed.
authors.affiliation: LERMAT-ISMRA, FRE CNRS 2149, 6 Boulevard Maréchal Juin, 14050 Caen Cedex, France.
authors.forename: G
authors.initials: G
authors.lastname: Farizy
authors.forename: J-L
authors.initials: JL
authors.lastname: Chermant
authors.forename: J C
authors.initials: JC
authors.lastname: Sangleboeuf
authors.forename: J
authors.initials: J
authors.lastname: Vicens
mesh_terms: D000388:Air; D002516:Ceramics / Q000737:chemistry*; D004777:Environment; D005898:Glass / Q000737:chemistry; D006358:Hot Temperature; D008854:Microscopy, Electron; D008855:Microscopy, Electron, Scanning; D010084:Oxidation-Reduction; D012822:Silicon Dioxide / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D012822:Silicon Dioxide