Wavelength stabilization of a distributed Bragg reflector laser diode by use of complementary current injection.
We have demonstrated wavelength stabilization in an 821-nm AlGaAs three-section tunable distributed Bragg reflector (DBR) semiconductor laser diode (LD) that consists of active, phase-controlled, and DBR regions. We injected two separate, complementary currents into the active and the phase-controlled regions in the DBR-LD to suppress wavelength shift. This modulation method was applied to the LD fundamental wave in a second-harmonic-generation (SHG) laser, and the oscillating wavelength was maintained within the phase-matching acceptance range of the SHG device during modulation. A peak blue-violet light power of 62 mW was obtained for the ideal modulation waveform.
Kitaoka
Y
Y
Storage Media Systems Development Center, Matsushita Electric Industrial Co., Ltd., 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka 570-8501, Japan. kitaoka.yasuo@jp.panasonic.com
Kasazumi
K
K
Morikawa
A
A
Yokoyama
T
T
Sugita
T
T
Mizuuchi
K
K
Yamamoto
K
K
Takayama
T
T
Takigawa
S
S
Yuri
M
M