title: Nonmonotonic bias voltage dependence of the magnetocurrent in GaAs-based magnetic tunnel transistors.
abstract: Magnetic tunnel transistors are used to study spin-dependent hot electron transport in thin CoFe films and across CoFe/GaAs interfaces. The magnetocurrent observed when the orientation of a CoFe base layer moment is reversed relative to that of a CoFe emitter, is found to exhibit a pronounced nonmonotonic variation with electron energy. A model based on spin-dependent inelastic scattering in the CoFe base layer and strong electron scattering at the CoFe/GaAs interface, resulting in a broad electron angular distribution, can well account for the variation of the magnetocurrent in magnetic tunnel transistors with GaAs(001) and GaAs(111) collectors.
authors.affiliation: IBM Research Division, Almaden Research Center, San Jose, California 95120, USA.
authors.forename: Sebastiaan
authors.initials: S
authors.lastname: van Dijken
authors.forename: Xin
authors.initials: X
authors.lastname: Jiang
authors.forename: Stuart S P
authors.initials: SS
authors.lastname: Parkin