title: Wavelength stabilization of a distributed Bragg reflector laser diode by use of complementary current injection.
abstract: We have demonstrated wavelength stabilization in an 821-nm AlGaAs three-section tunable distributed Bragg reflector (DBR) semiconductor laser diode (LD) that consists of active, phase-controlled, and DBR regions. We injected two separate, complementary currents into the active and the phase-controlled regions in the DBR-LD to suppress wavelength shift. This modulation method was applied to the LD fundamental wave in a second-harmonic-generation (SHG) laser, and the oscillating wavelength was maintained within the phase-matching acceptance range of the SHG device during modulation. A peak blue-violet light power of 62 mW was obtained for the ideal modulation waveform.
authors.affiliation: Storage Media Systems Development Center, Matsushita Electric Industrial Co., Ltd., 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka 570-8501, Japan. kitaoka.yasuo@jp.panasonic.com
authors.forename: Y
authors.initials: Y
authors.lastname: Kitaoka
authors.forename: K
authors.initials: K
authors.lastname: Kasazumi
authors.forename: A
authors.initials: A
authors.lastname: Morikawa
authors.forename: T
authors.initials: T
authors.lastname: Yokoyama
authors.forename: T
authors.initials: T
authors.lastname: Sugita
authors.forename: K
authors.initials: K
authors.lastname: Mizuuchi
authors.forename: K
authors.initials: K
authors.lastname: Yamamoto
authors.forename: T
authors.initials: T
authors.lastname: Takayama
authors.forename: S
authors.initials: S
authors.lastname: Takigawa
authors.forename: M
authors.initials: M
authors.lastname: Yuri