title: Near-field observation of carrier diffusion in GaAs quantum structures under high magnetic fields.
abstract: Photoluminescence from a two-dimensional electron-gas system in GaAs single hetero-structures was investigated using a scanning near-field optical microscope (SNOM) operated at cryogenic temperatures under high magnetic fields. The local intensity of the luminescence increased 600-fold that at 0 T as the magnetic field was increased up to 6 T. The enhancement depended on the spatial resolution of the SNOM. These characteristics are explained by the suppression of the diffusion of photocarriers caused by the Lorentz force in magnetic fields.
authors.affiliation: Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan. t-tokizaki@aist.go.jp
authors.forename: T
authors.initials: T
authors.lastname: Tokizaki
authors.forename: T
authors.initials: T
authors.lastname: Onuki
authors.forename: T
authors.initials: T
authors.lastname: Tsuchiya
authors.forename: H
authors.initials: H
authors.lastname: Yokoyama