title: Resonant inversion of tunneling magnetoresistance.
abstract: Resonant tunneling via localized states in the barrier can invert magnetoresistance in magnetic tunnel junctions. Experiments performed on electrodeposited Ni/NiO/Co nanojunctions of area smaller than 0.01 microm(2) show that both positive and negative values of magnetoresistance are possible. Calculations based on Landauer-Büttiker theory explain this behavior in terms of disorder-driven statistical variations in magnetoresistance with a finite probability of inversion due to resonant tunneling.
authors.affiliation: Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0111, USA.
authors.forename: E Y
authors.initials: EY
authors.lastname: Tsymbal
authors.forename: A
authors.initials: A
authors.lastname: Sokolov
authors.forename: I F
authors.initials: IF
authors.lastname: Sabirianov
authors.forename: B
authors.initials: B
authors.lastname: Doudin