Ultralow-noise near-infrared detection system with a Si p-i-n photodiode.
Noises associated with materials and devices in the readout circuits for a Si p-i-n photodiode have been measured. The dielectric polarization noise of the materials and devices near the gate circuit of the junction field-effect transistor used for the preamplifier determined the photodetection limits of photodiodes with a diameter smaller than several millimeters. We fabricated an ultralow-noise photodetection system, minimizing the polarization noise as much as possible. The readout noises of the system were 10 and 18 electrons in a correlated double sample for 0.1- and 1-mm-diameter Si p-i-n photodiodes at 77 K, respectively.
Akiba
Makoto
M
Communications Research Laboratory, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan. akiba@crl.go.jp
Fujiwara
Mikio
M