title: Conductivity and field effect transistor of La2@C80 metallofullerene.
abstract: We first demonstrate a field-effect-transistor operation of dimetallofullerene La2@C80 with the icosahedral cage symmetry. The thin-film device showed an n-type behavior with a mobility of 1.1 x 10-4 cm2/V s at room temperature under high vacuum. Taking the nature of LUMO into account, the n-type behavior indicates an occurrence of carrier conduction through encapsulated La ions. The low mobility, suggesting an intermolecular hopping mechanism, is ascribed to the intrinsic and extrinsic reasons, which are discussed in the text.
authors.affiliation: Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
authors.forename: Shin-ichiro
authors.initials: S
authors.lastname: Kobayashi
authors.forename: Satoshi
authors.initials: S
authors.lastname: Mori
authors.forename: Satoru
authors.initials: S
authors.lastname: Iida
authors.forename: Hiroaki
authors.initials: H
authors.lastname: Ando
authors.forename: Taishi
authors.initials: T
authors.lastname: Takenobu
authors.forename: Yasujiro
authors.initials: Y
authors.lastname: Taguchi
authors.forename: Akihiko
authors.initials: A
authors.lastname: Fujiwara
authors.forename: Atsushi
authors.initials: A
authors.lastname: Taninaka
authors.forename: Hisanori
authors.initials: H
authors.lastname: Shinohara
authors.forename: Yoshihiro
authors.initials: Y
authors.lastname: Iwasa