title: Voltage-controlled spin selection in a magnetic resonant tunneling diode.
abstract: We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.
authors.affiliation: Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany.
authors.forename: A
authors.initials: A
authors.lastname: Slobodskyy
authors.forename: C
authors.initials: C
authors.lastname: Gould
authors.forename: T
authors.initials: T
authors.lastname: Slobodskyy
authors.forename: C R
authors.initials: CR
authors.lastname: Becker
authors.forename: G
authors.initials: G
authors.lastname: Schmidt
authors.forename: L W
authors.initials: LW
authors.lastname: Molenkamp