Optical detection of hot-electron spin injection into GaAs from a magnetic tunnel transistor source.
Injection of spin-polarized hot-electron current from a magnetic tunnel transistor into GaAs is demonstrated by the observation of polarized light emission from a GaAs/In(0.2)Ga(0.8)As multiple quantum well light-emitting diode. Electroluminescence from the quantum wells shows a polarization of approximately 10% after subtraction of a linear background polarization. The polarization shows a strong dependence on the bias voltage across the diode, which may originate from changes in the electron spin relaxation rate in the quantum wells under varying bias conditions.
Jiang
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IBM Research Division, Almaden Research Center, San Jose, California 95120, USA.
Wang
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R
van Dijken
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S
Shelby
R
R
Macfarlane
R
R
Solomon
G S
GS
Harris
J
J
Parkin
S S P
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