title: Optical detection of hot-electron spin injection into GaAs from a magnetic tunnel transistor source.
abstract: Injection of spin-polarized hot-electron current from a magnetic tunnel transistor into GaAs is demonstrated by the observation of polarized light emission from a GaAs/In(0.2)Ga(0.8)As multiple quantum well light-emitting diode. Electroluminescence from the quantum wells shows a polarization of approximately 10% after subtraction of a linear background polarization. The polarization shows a strong dependence on the bias voltage across the diode, which may originate from changes in the electron spin relaxation rate in the quantum wells under varying bias conditions.
authors.affiliation: IBM Research Division, Almaden Research Center, San Jose, California 95120, USA.
authors.forename: X
authors.initials: X
authors.lastname: Jiang
authors.forename: R
authors.initials: R
authors.lastname: Wang
authors.forename: S
authors.initials: S
authors.lastname: van Dijken
authors.forename: R
authors.initials: R
authors.lastname: Shelby
authors.forename: R
authors.initials: R
authors.lastname: Macfarlane
authors.forename: G S
authors.initials: GS
authors.lastname: Solomon
authors.forename: J
authors.initials: J
authors.lastname: Harris
authors.forename: S S P
authors.initials: SS
authors.lastname: Parkin