title: Low-loss submicrometer silicon-on-insulator rib waveguides and corner mirrors.
abstract: Rib microwaveguides are demonstrated on silicon-on-insulator substrates with Si film thickness of either 380 or 200 nm and a width of 1 microm. Corner mirrors that allow compact 90 degrees turns between two perpendicular waveguides are characterized. Measured propagation losses are approximately 0.4 dB/cm and approximately 0.5 dB/cm for 380-nm and 200-nm Si film, respectively, and mirror losses are approximately 1 dB. This allows the development of applications such as optical interconnects in integrated circuits over propagation distances larger than several centimeters.
authors.affiliation: Institut d'Electronique Fondamentale, Centre National de la Recherche Scientifique Unité Mixte de Recherche 8622, Université Paris-Sud, F91405 Orsay, France. sebastien.lardenois@ief.u-psud.fr
authors.forename: S
authors.initials: S
authors.lastname: Lardenois
authors.forename: D
authors.initials: D
authors.lastname: Pascal
authors.forename: L
authors.initials: L
authors.lastname: Vivien
authors.forename: E
authors.initials: E
authors.lastname: Cassan
authors.forename: S
authors.initials: S
authors.lastname: Laval
authors.forename: R
authors.initials: R
authors.lastname: Orobtchouk
authors.forename: M
authors.initials: M
authors.lastname: Heitzmann
authors.forename: N
authors.initials: N
authors.lastname: Bouzaida
authors.forename: L
authors.initials: L
authors.lastname: Mollard