Grain growth in nanocrystalline yttrium-stabilized zirconia thin films synthesized by spin coating of polymeric precursors.
This article reports results of experimental studies on the microstructural evolution of nanocrystalline yttrium-stabilized zirconia thin films synthesized on a Si substrate via a polymeric precursor spin-coating approach. Grain growth behavior has been investigated at different annealing temperatures (700-1200 degrees C) for periods of up to 240 h. A similar film thickness (approximately 120 nm) was maintained for all of the samples used in this study, to avoid variation in film thickness-dependent grain growth. The effects of the thermal history of the film and the annealing atmosphere on the grain growth were also studied. A simple semiempirical grain growth model has been developed to describe isothermal annealing data and to predict dynamic grain growth behavior during the sintering of polymeric precursor layers to form cubic-phase nanocrystalline yttrium-stabilized zirconia films.
Dong
Junhang
J
Chemical Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
Hu
Michael Z
MZ
Payzant
E Andrew
EA
Armstrong
Timothy R
TR
Becher
Paul F
PF
D000399:Air Pressure; D003460:Crystallization / Q000379:methods*; D003461:Crystallography / Q000379:methods; D011211:Electric Power Supplies; D006358:Hot Temperature; D008422:Materials Testing / Q000379:methods*; D008854:Microscopy, Electron; D008956:Models, Chemical; D008958:Models, Molecular; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D011108:Polymers / Q000737:chemistry; D014961:X-Ray Diffraction; D015019:Yttrium / Q000737:chemistry*; D015040:Zirconium / Q000737:chemistry*
D011108:Polymers; D015019:Yttrium; D015040:Zirconium