Single crystal GaN nanowires.
Single crystal gallium nitride nanowires have been obtained by heating gallium acetylacetonate in the presence of carbon nanotubes or activated carbon in NH3 vapor at 910 degrees C. GaN nanowires also were obtained when the reaction of gallium acetylacetonate with NH3 was carried out over catalytic Fe/Ni particles dispersed over silica. The former procedure with carbon nanotubes is preferable because it avoids the presence of metal particles in the nanowire bundles.
Deepak
F L
FL
Chemistry and Physics of Materials Unit, CSIR Centre of Excellence in Chemistry, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P.O., Bangalore 560 064, India.
Govindaraj
A
A
Rao
C N
CN
D000641:Ammonia / Q000737:chemistry; D002606:Charcoal / Q000737:chemistry; D003460:Crystallization / Q000379:methods*; D003461:Crystallography / Q000379:methods; D004559:Electric Wiring; D005708:Gallium / Q000737:chemistry* / Q000302:isolation & purification / Q000528:radiation effects*; D049449:Luminescence; D008854:Microscopy, Electron; D008855:Microscopy, Electron, Scanning; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D037742:Nanotubes, Carbon / Q000737:chemistry; D010316:Particle Size; D014835:Volatilization; D014961:X-Ray Diffraction
D037742:Nanotubes, Carbon; D002606:Charcoal; C473348:gallium nitride; D000641:Ammonia; D005708:Gallium