title: Structural and optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition.
abstract: Silicon nanocrystals (Si-nc) embedded in SiO2 matrix have been prepared by high temperature thermal annealing (1000-1250 degrees C) of substoichiometric SiOx films deposited by plasma-enhanced chemical vapor deposition (PECVD). Different techniques have been used to examine the optical and structural properties of Si-nc. Transmission electron microscopy analysis shows the formation of nanocrystals whose sizes are dependent on annealing conditions and deposition parameters. The spectral positions of room temperature photoluminescence are systematically blue shifted with reduction in the size of Si-nc obtained by decreasing the annealing temperature or the Si content during the PECVD deposition. A similar trend has been found in optical absorption measurements. X-ray absorption fine structure measurements indicate the presence of an intermediate region between the Si-nc and the SiO2 matrix that participates in the light emission process. Theoretical observations reported here support these findings. All these efforts allow us to study the link between dimensionality, optical properties, and the local environment of Si-nc and the surrounding SiO2 matrix.
authors.affiliation: INFM, Dipartimento di Fisica, Università di Trento, via Sommarive 14, 38050, Povo, Trento, Italy.
authors.forename: G V
authors.initials: GV
authors.lastname: Prakash
authors.forename: N
authors.initials: N
authors.lastname: Daldosso
authors.forename: E
authors.initials: E
authors.lastname: Degoli
authors.forename: F
authors.initials: F
authors.lastname: Iacona
authors.forename: M
authors.initials: M
authors.lastname: Cazzanelli
authors.forename: Z
authors.initials: Z
authors.lastname: Gaburro
authors.forename: G
authors.initials: G
authors.lastname: Pucker
authors.forename: P
authors.initials: P
authors.lastname: Dalba
authors.forename: F
authors.initials: F
authors.lastname: Rocca
authors.forename: E
authors.initials: E
authors.lastname: Ceretta Moreira
authors.forename: G
authors.initials: G
authors.lastname: Franzò
authors.forename: D
authors.initials: D
authors.lastname: Pacifici
authors.forename: F
authors.initials: F
authors.lastname: Priolo
authors.forename: C
authors.initials: C
authors.lastname: Arcangeli
authors.forename: A B
authors.initials: AB
authors.lastname: Filonov
authors.forename: S
authors.initials: S
authors.lastname: Ossicini
authors.forename: L
authors.initials: L
authors.lastname: Pavesi
mesh_terms: D003198:Computer Simulation; D003460:Crystallization / Q000379:methods*; D005740:Gases / Q000737:chemistry; D006358:Hot Temperature; D049449:Luminescence; D008958:Models, Molecular; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D010100:Oxygen / Q000737:chemistry; D012825:Silicon / Q000737:chemistry* / Q000302:isolation & purification / Q000528:radiation effects; D012822:Silicon Dioxide / Q000737:chemistry* / Q000302:isolation & purification / Q000528:radiation effects; D013057:Spectrum Analysis; D013499:Surface Properties; D014835:Volatilization; D014961:X-Ray Diffraction
chemical_list: D005740:Gases; D012822:Silicon Dioxide; D010100:Oxygen; D012825:Silicon