title: Performance of AlGaN/GaN high electron mobility transistors at nanoscale gate lengths.
abstract: The DC and RF performance of AlGaN/GaN high electron mobility transistors with nanoscale gate lengths is presented. The layer structures were grown by either metal organic chemical vapor deposition or rf plasma-assisted molecular beam epitaxy. Excellent scaling properties were observed as a function of both gate length and width and confirm that these devices are well suited to both high speed switching and power microwave applications.
authors.affiliation: Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA.
authors.forename: J W
authors.initials: JW
authors.lastname: Johnson
authors.forename: F
authors.initials: F
authors.lastname: Ren
authors.forename: S J
authors.initials: SJ
authors.lastname: Pearton
authors.forename: A G
authors.initials: AG
authors.lastname: Baca
authors.forename: J
authors.initials: J
authors.lastname: Han
authors.forename: A M
authors.initials: AM
authors.lastname: Dabiran
authors.forename: P P
authors.initials: PP
authors.lastname: Chow
mesh_terms: D000535:Aluminum / Q000737:chemistry*; D000669:Amplifiers, Electronic; D003460:Crystallization / Q000379:methods*; D004563:Electrochemistry / Q000295:instrumentation / Q000379:methods; D004583:Electrons; D004867:Equipment Design; D019544:Equipment Failure Analysis / Q000379:methods; D005708:Gallium / Q000737:chemistry*; D008422:Materials Testing / Q000379:methods; D008904:Miniaturization; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D014173:Transistors, Electronic
chemical_list: C473348:gallium nitride; D005708:Gallium; D000535:Aluminum