Direct measurement of the spin polarization of the magnetic semiconductor (Ga,Mn)As.
We have carried out a direct measurement of the degree of spin polarization (P) of the magnetic semiconductor Ga1-xMnxAs using Andreev reflection spectroscopy. Analyses of the conductance spectra of high transparency Ga(0.95)Mn(0.05)As/Ga junctions consistently yield an intrinsic value for P greater than 85%. Our experiments also revealed an extreme sensitivity of the measured spin polarization to the nature and quality of the interface for this material.
Braden
J G
JG
MARTECH and Department of Physics, Florida State University, Tallahassee, Florida 32306, USA.
Parker
J S
JS
Xiong
P
P
Chun
S H
SH
Samarth
N
N