title: Direct measurement of the spin polarization of the magnetic semiconductor (Ga,Mn)As.
abstract: We have carried out a direct measurement of the degree of spin polarization (P) of the magnetic semiconductor Ga1-xMnxAs using Andreev reflection spectroscopy. Analyses of the conductance spectra of high transparency Ga(0.95)Mn(0.05)As/Ga junctions consistently yield an intrinsic value for P greater than 85%. Our experiments also revealed an extreme sensitivity of the measured spin polarization to the nature and quality of the interface for this material.
authors.affiliation: MARTECH and Department of Physics, Florida State University, Tallahassee, Florida 32306, USA.
authors.forename: J G
authors.initials: JG
authors.lastname: Braden
authors.forename: J S
authors.initials: JS
authors.lastname: Parker
authors.forename: P
authors.initials: P
authors.lastname: Xiong
authors.forename: S H
authors.initials: SH
authors.lastname: Chun
authors.forename: N
authors.initials: N
authors.lastname: Samarth