Performance of AlGaN/GaN high electron mobility transistors at nanoscale gate lengths.
The DC and RF performance of AlGaN/GaN high electron mobility transistors with nanoscale gate lengths is presented. The layer structures were grown by either metal organic chemical vapor deposition or rf plasma-assisted molecular beam epitaxy. Excellent scaling properties were observed as a function of both gate length and width and confirm that these devices are well suited to both high speed switching and power microwave applications.
Johnson
J W
JW
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA.
Ren
F
F
Pearton
S J
SJ
Baca
A G
AG
Han
J
J
Dabiran
A M
AM
Chow
P P
PP
D000535:Aluminum / Q000737:chemistry*; D000669:Amplifiers, Electronic; D003460:Crystallization / Q000379:methods*; D004563:Electrochemistry / Q000295:instrumentation / Q000379:methods; D004583:Electrons; D004867:Equipment Design; D019544:Equipment Failure Analysis / Q000379:methods; D005708:Gallium / Q000737:chemistry*; D008422:Materials Testing / Q000379:methods; D008904:Miniaturization; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D014173:Transistors, Electronic
C473348:gallium nitride; D005708:Gallium; D000535:Aluminum