Nanoscale magnetic regions formed in GaN implanted with Mn.
Platelet structures with diameters less than 250 A and hexagonal symmetry were formed in GaN by high dose Mn+ ion implantation and annealing at 700-1000 degrees C. Selected-area diffraction pattern analysis indicates that these regions are GaxMn1-xN with a different lattice constant to the host GaN. The presence of the GaMnN corresponds to ferromagnetic behavior of the samples with a Curie temperature of approximately 250 K.
Theodoropoulou
N
N
Department of Physics, University of Florida, Gainesville, Florida 32611, USA.
Lee
K P
KP
Overberg
M E
ME
Chu
S N
SN
Hebard
A F
AF
Abernathy
C R
CR
Pearton
S J
SJ
Wilson
R G
RG
D000327:Adsorption; D003460:Crystallization / Q000379:methods*; D004563:Electrochemistry / Q000379:methods; D004574:Electromagnetic Fields; D005708:Gallium / Q000737:chemistry* / Q000302:isolation & purification; D006244:Hardness; D008280:Magnetics; D008345:Manganese / Q000737:chemistry* / Q000302:isolation & purification; D008422:Materials Testing / Q000379:methods; D018625:Microscopy, Atomic Force; D008854:Microscopy, Electron; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D014961:X-Ray Diffraction
C473348:gallium nitride; D008345:Manganese; D005708:Gallium