Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structures.
A pseudomorphic Al0.5Ga0.5As/In0.25Ga0.75As/GaAs asymmetric quantum wire (QWR) structure was grown on GaAs V-grooved substrate by low pressure metal organic vapor phase epitaxy. The formation of crescent shaped QWRs at the bottom of the V-grooves was confirmed by both transmission electron microscopy and photoluminescence (PL) spectra. The temperature dependence of PL spectra demonstrated a fast decrease of the sidewall quantum well PL intensity with increasing temperature, which originates from relaxation of carriers from well to wire region. The self-aligned dual implantation technique was successfully used to selectively disable the adjacent quantum structures. Decrease of the PL intensity of QWR at 8 K was observed after selective implantation, which resulted from a decreased number of carriers relaxed from adjacent quantum structures.
Liu
X Q
XQ
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, People's Republic of China.
Lu
W
W
Shen
S C
SC
Tan
H H
HH
Jagadish
C
C
Zou
J
J
D000535:Aluminum / Q000737:chemistry* / Q000528:radiation effects; D001152:Arsenicals / Q000138:chemical synthesis / Q000737:chemistry* / Q000528:radiation effects; D003460:Crystallization / Q000379:methods*; D004559:Electric Wiring; D005708:Gallium / Q000737:chemistry* / Q000528:radiation effects; D007204:Indium / Q000737:chemistry / Q000528:radiation effects; D007477:Ions; D049449:Luminescence; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D010777:Photochemistry / Q000379:methods; D012666:Semiconductors; D013696:Temperature; D014835:Volatilization
D001152:Arsenicals; D007477:Ions; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; D000535:Aluminum