Quantum efficiency of silicon photodiodes in the near-infrared spectral range.
The quantum efficiency of silicon photodiodes and factors that might be responsible for the drop in quantum efficiency in the near-infrared spectral range were analyzed. It was shown that poor reflectivity from the rear surface of the die could account for a decrease in Si photodiode quantum efficiency in near-infrared spectral range by more than 20%. The photodiode quantum efficiency was modeled with an appropriate representation for the carrier-collection efficiency dependence on the die penetration depth. A corrected analytical expression for calculating the photodiode quantum efficiency is given. Some methods to improve the quantum efficiency of silicon photodiodes in near-infrared spectral range are discussed.
Hicks
Chris
C
Semicoa Incorporated, 333 McCormick Avenue, Costa Mesa, California 92626, USA.
Kalatsky
Mark
M
Metzler
Richard A
RA
Goushcha
Alexander O
AO