title: Nanoscale magnetic regions formed in GaN implanted with Mn.
abstract: Platelet structures with diameters less than 250 A and hexagonal symmetry were formed in GaN by high dose Mn+ ion implantation and annealing at 700-1000 degrees C. Selected-area diffraction pattern analysis indicates that these regions are GaxMn1-xN with a different lattice constant to the host GaN. The presence of the GaMnN corresponds to ferromagnetic behavior of the samples with a Curie temperature of approximately 250 K.
authors.affiliation: Department of Physics, University of Florida, Gainesville, Florida 32611, USA.
authors.forename: N
authors.initials: N
authors.lastname: Theodoropoulou
authors.forename: K P
authors.initials: KP
authors.lastname: Lee
authors.forename: M E
authors.initials: ME
authors.lastname: Overberg
authors.forename: S N
authors.initials: SN
authors.lastname: Chu
authors.forename: A F
authors.initials: AF
authors.lastname: Hebard
authors.forename: C R
authors.initials: CR
authors.lastname: Abernathy
authors.forename: S J
authors.initials: SJ
authors.lastname: Pearton
authors.forename: R G
authors.initials: RG
authors.lastname: Wilson
mesh_terms: D000327:Adsorption; D003460:Crystallization / Q000379:methods*; D004563:Electrochemistry / Q000379:methods; D004574:Electromagnetic Fields; D005708:Gallium / Q000737:chemistry* / Q000302:isolation & purification; D006244:Hardness; D008280:Magnetics; D008345:Manganese / Q000737:chemistry* / Q000302:isolation & purification; D008422:Materials Testing / Q000379:methods; D018625:Microscopy, Atomic Force; D008854:Microscopy, Electron; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D014961:X-Ray Diffraction
chemical_list: C473348:gallium nitride; D008345:Manganese; D005708:Gallium