title: InAs quantum dots capped by GaAs, In0.4Ga0.6As dots, and In0.2Ga0.8As well.
abstract: We have fabricated and characterized three types of InAs quantum dots (QDs) with different InxGa1-xAs capping layers. Post-growth atomic force microscopy measurements show that the In0.2Ga0.8As/InAs structure has a smooth surface (dot-in-well structure), whereas the In0.4Ga0.6As/InAs structure revealed large QDs with a density similar to that underneath InAs QDs on GaAs (dot-in-dot). With increasing In mole fraction of the capping layer and increasing In0.4Ga0.6As thickness, the energy position of the room-temperature photoluminescence (PL) peak is red-shifted. The quantum dot-in-dot structure emits stronger room-temperature PL than does the quantum dot-in-well structure. With a spatially distributed strain in the InAs quantum dot, we have solved the three-dimensional Schrödinger equation by the Green's function theory for the eigenvalues and eigen wave functions. It is concluded that the ground state increases its wave function penetration into the low-barrier InxGa1-xAs capping layer so that its energy position is red-shifted. The reduced PL peak intensity of the dot-in-well (compared with GaAs covered dots) is due to the reduced overlapping between the ground state and the extended states above the GaAs barrier. The overlapping reduction in the dot-in-dot is over compensated for by the reduced relaxation energy (full width at half-maximum), indicating the importance of the sample quality in determining the PL intensity.
authors.affiliation: Physical Electronics and Photonics, Microtechnology Center at Chalmers, Department of Physics, Fysikgränd 3, Chalmers University of Technology and Gothenburg University, Göteborg, Sweden.
authors.forename: Y
authors.initials: Y
authors.lastname: Fu
authors.forename: S M
authors.initials: SM
authors.lastname: Wang
authors.forename: F
authors.initials: F
authors.lastname: Ferdos
authors.forename: M
authors.initials: M
authors.lastname: Sadeghi
authors.forename: A
authors.initials: A
authors.lastname: Larsson
mesh_terms: D001152:Arsenicals / Q000138:chemical synthesis / Q000737:chemistry* / Q000528:radiation effects; D003198:Computer Simulation; D003460:Crystallization / Q000379:methods; D004735:Energy Transfer; D005708:Gallium / Q000737:chemistry* / Q000528:radiation effects; D007204:Indium / Q000737:chemistry*; D049449:Luminescence; D018625:Microscopy, Atomic Force; D008958:Models, Molecular; D008968:Molecular Conformation; D036103:Nanotechnology / Q000295:instrumentation / Q000379:methods*
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium