title: Analytical electron microscopy study of nanometre-scale oxide formed in contact-hole-bottom Si surfaces.
abstract: Nanometre-scale interfacial oxides formed in contact-hole-bottom Si surfaces were investigated by analytical electron microscopy coupled with a field-emission transmission electron microscope. The results showed that the chemical state of the residual oxide formed during reactive-ion etching was mostly changed from the suboxide of Si2+ or Si3+ to the oxide of Si4+ by the following light-etch treatment. Consequently, the process of removing the residual oxide by light-etch treatment was improved and it contributed to the accomplishment of lower contact resistance.
authors.forename: Jun-Mo
authors.initials: JM
authors.lastname: Yang
authors.forename: Ju-Chul
authors.initials: JC
authors.lastname: Park
authors.forename: Yoon-Baek
authors.initials: YB
authors.lastname: Park
authors.forename: Joong-Jung
authors.initials: JJ
authors.lastname: Kim
authors.forename: Tae-Sun
authors.initials: TS
authors.lastname: Back
authors.forename: Ho-Seok
authors.initials: HS
authors.lastname: Lee
authors.forename: Soun-Young
authors.initials: SY
authors.lastname: Lee
authors.forename: Sung-Wook
authors.initials: SW
authors.lastname: Park