title: Anisotropic thermal conductivity of Ge quantum-dot and symmetrically strained Si/Ge superlattices.
abstract: We report the first experimental results on the temperature dependent in-plane and cross-plane thermal conductivities of a symmetrically strained Si/Ge superlattice and a Ge quantum-dot superlattice measured by the two-wire 3 omega method. The measured thermal conductivity values are highly anisotropic and are significantly reduced compared to the bulk thermal conductivity of the structures. The results can be explained by using heat transport models based on the Boltzmann transport equation with partially diffusive scattering of the phonons at the superlattice interfaces.
authors.affiliation: Nanoscale Heat Transfer and Thermoelectrics Laboratory, Mechanical and Aerospace Engineering Department, University of California, Los Angeles, California 90095, USA.
authors.forename: W L
authors.initials: WL
authors.lastname: Liu
authors.forename: T
authors.initials: T
authors.lastname: Borca-Tasciuc
authors.forename: G
authors.initials: G
authors.lastname: Chen
authors.forename: J L
authors.initials: JL
authors.lastname: Liu
authors.forename: K L
authors.initials: KL
authors.lastname: Wang
mesh_terms: D016880:Anisotropy; D003198:Computer Simulation; D003460:Crystallization / Q000379:methods*; D005857:Germanium / Q000737:chemistry*; D008422:Materials Testing / Q000379:methods; D008958:Models, Molecular; D036103:Nanotechnology / Q000295:instrumentation*; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D013314:Stress, Mechanical; D013696:Temperature; D013814:Thermal Conductivity
chemical_list: D005857:Germanium; D012825:Silicon