[Photoluminescence from Si and Er dual-implanted Si-rich thermal oxidation SiO2/Si thin films].
Si and Er ions were implanted into Si-rich thermal oxidation SiO2/Si thin film using metal vapor vacuum arc (MEVVA) ion source implanter, which could produce ion beams with high-fluence and strong-flux. Rutheroford backscattering spectra show that Er concentration in as-implanted sample is attained to 10 at. % corresponding to the level of 10(21) atoms.cm-3. Needle nanocrystal Si in the surface of annealed samples have been formed during ion implantation followed by rapid thermal annealing. Photoluminescence around 1.54 microns from Er-doped Si-rich thermal oxidized SiO2/Si thin film were observed at 77 K and room-temperature (RT). Light emission around the wavelength of 1.54 microns were closely related to many conditions including substrate, ion implantation and annealing etc.
Xiao
Zhi-song
ZS
Key Laboratory in University for Radiation Beam Technology and Materials Modification, Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing Radiation Center, Beijing 100875, China.
Xu
Fei
F
Zhang
Tong-he
TH
Cheng
Guo-an
GA
Gu
Lan-lan
LL
D003460:Crystallization; D004871:Erbium / Q000737:chemistry*; D006358:Hot Temperature; D049449:Luminescence; D036103:Nanotechnology; D010084:Oxidation-Reduction; D012542:Scattering, Radiation; D012825:Silicon / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry*; D014618:Vacuum; D014835:Volatilization
D012822:Silicon Dioxide; D004871:Erbium; D012825:Silicon