title: [Investigation of a-SiOxNy thin film by infrared absorption].
abstract: Infrared absorptive characteristics of a-SiOxNy thin film was investigated by altering O and N content. Various molecular bonds were identified by the infrared absorption measurement. 1,105 and 865 cm-1 peaks are associated with single Si-O and Si-N modes respectively. When the O and N contents increase, the peaks associated with the symmetry and anti-symmetry modes of O-Si-O and N-Si-N are measured. For N-Si-O, the absorptive peaks of Si-O and Si-N mode are located at 1,036 and 890 cm-1 respectively.
authors.affiliation: Department of Physics, Shantou University, 515063 Shantou.
authors.forename: W
authors.initials: W
authors.lastname: Shi
authors.forename: Y
authors.initials: Y
authors.lastname: Ouyang
authors.forename: B
authors.initials: B
authors.lastname: Yu
mesh_terms: D000042:Absorption; D055598:Chemical Phenomena; D002627:Chemistry, Physical; D009573:Nitrites / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry; D017655:Silicon Compounds / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry*; D013055:Spectrophotometry, Infrared; D014961:X-Ray Diffraction / Q000379:methods
chemical_list: D009573:Nitrites; D017655:Silicon Compounds; D012822:Silicon Dioxide; D012825:Silicon