[Study on pollution for the photoelectronic material InP].
The mass spectrum analysis of crystal face (100) and (111) and the photoluminescence analysis of crystal face (100) in the photoelectronic material InP were given. The Hall coefficient, charge carrier concentration and Hall mobility were determined. Experimental results indicate that the pollution of silicon is predominant.
Xu
Jian-cheng
JC
Department of Physics, Capital Normal University, Beijing 100037, China.
Ding
Xiao-ping
XP
Chen
Ding-qin
DQ
D000535:Aluminum / Q000032:analysis; D003460:Crystallization; D004563:Electrochemistry; D004579:Electron Transport; D004583:Electrons; D007204:Indium / Q000737:chemistry*; D007501:Iron / Q000032:analysis; D049449:Luminescence; D013058:Mass Spectrometry; D055095:Optics and Photonics / Q000295:instrumentation; D011478:Protactinium / Q000737:chemistry*; D012825:Silicon / Q000032:analysis*
D007204:Indium; D011478:Protactinium; D000535:Aluminum; D007501:Iron; D012825:Silicon