Realistic model for the output beam profile of stripe and tapered superluminescent light-emitting diodes.
We present a new model to analyse the spatial characteristics of the output beam of conventional (straight-stripe) and tapered superluminescent light-emitting diodes. The device model includes both spontaneous and stimulated emission processes as well as a nonuniform carrier density distribution to correctly represent current spreading and carrier diffusion effects. Near- and far-field intensity profiles computed with this model are accurately verified over a wide range of injection currents by comparisons with experimental results measured from in-house fabricated devices.
Causa
Frederica
F
The Department of Electronic and Electrical Engineering, University of Bath, BA2 7AY, England, UK. eesfc@bath.ac.uk
Sarma
Jayanta
J