title: [Raman analysis of SiGe films grown by UHV/CVD].
abstract: This paper presents a Raman method, which is no deconstructed, to measure Ge content and strain in SiGe alloy films and some samples, which is grown by UHV/CVD with different Ge content and thickness, have been tested by above method. Two samples among them were measured by DCXRD, the results tested by DCXRD are consistent with Raman results that proves that the method in this paper is reliable and accurate. The SiGe PHMOSFET has been fabricated by the samples, the transconductance reaches 112 ms.mm-1 for the device with 0.5 micron channel.
authors.affiliation: Institute of Microelectronics, Tsinghua University, 100084 Beijing.
authors.forename: P
authors.initials: P
authors.lastname: Zhu
authors.forename: P
authors.initials: P
authors.lastname: Chen
authors.forename: C
authors.initials: C
authors.lastname: Li
authors.forename: G
authors.initials: G
authors.lastname: Luo
authors.forename: H
authors.initials: H
authors.lastname: Jia
authors.forename: Z
authors.initials: Z
authors.lastname: Liu
authors.forename: P
authors.initials: P
authors.lastname: Qian
mesh_terms: D000497:Alloys / Q000737:chemistry*; D005857:Germanium / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*; D017655:Silicon Compounds / Q000737:chemistry*; D013059:Spectrum Analysis, Raman
chemical_list: D000497:Alloys; D017655:Silicon Compounds; D005857:Germanium; D012825:Silicon