title: [Study on pollution for the photoelectronic material InP].
abstract: The mass spectrum analysis of crystal face (100) and (111) and the photoluminescence analysis of crystal face (100) in the photoelectronic material InP were given. The Hall coefficient, charge carrier concentration and Hall mobility were determined. Experimental results indicate that the pollution of silicon is predominant.
authors.affiliation: Department of Physics, Capital Normal University, Beijing 100037, China.
authors.forename: Jian-cheng
authors.initials: JC
authors.lastname: Xu
authors.forename: Xiao-ping
authors.initials: XP
authors.lastname: Ding
authors.forename: Ding-qin
authors.initials: DQ
authors.lastname: Chen
mesh_terms: D000535:Aluminum / Q000032:analysis; D003460:Crystallization; D004563:Electrochemistry; D004579:Electron Transport; D004583:Electrons; D007204:Indium / Q000737:chemistry*; D007501:Iron / Q000032:analysis; D049449:Luminescence; D013058:Mass Spectrometry; D055095:Optics and Photonics / Q000295:instrumentation; D011478:Protactinium / Q000737:chemistry*; D012825:Silicon / Q000032:analysis*
chemical_list: D007204:Indium; D011478:Protactinium; D000535:Aluminum; D007501:Iron; D012825:Silicon