title: MOSFET dosimetry in-vivo at superficial and orthovoltage x-ray energies.
abstract: This note investigates in-vivo dosimetry using a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for radiotherapy treatment at superficial and orthovoltage x-ray energies. This was performed within one fraction of the patients treatment. Standard measurements along with energy response of the detector are given. Results showed that the MOSFET measurements in-vivo agreed with calculated results on average within +/- 5.6% over all superficial and orthovoltage energies. These variations were slightly larger than TLD results with variations between measured and calculated results being +/- 5.0% for the same patient measurements. The MOSFET device provides adequate in-vivo dosimetry for superficial and orthovoltage energy treatments with the accuracy of the measurements seeming to be relatively on par with TLD in our case. The MOSFET does have the advantage of returning a relatively immediate dosimetric result after irradiation.
authors.affiliation: City University of Hong Kong, Dept. of Physics and Materials Science, Kowloon Tong, Hong Kong.
authors.forename: T
authors.initials: T
authors.lastname: Cheung
authors.forename: M J
authors.initials: MJ
authors.lastname: Butson
authors.forename: P K N
authors.initials: PK
authors.lastname: Yu
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D011874:Radiometry / Q000295:instrumentation*; D011878:Radiotherapy / Q000295:instrumentation*; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D014159:Transducers; D014173:Transistors, Electronic