Magnetotunneling spectroscopy of dilute Ga(AsN) quantum wells.
We use magnetotunneling spectroscopy to explore the admixing of the extended GaAs conduction band states with the localized N-impurity states in dilute GaAs(1-y)N(y) quantum wells. In our resonant tunneling diodes, electrons can tunnel into the N-induced E- and E+ subbands in a GaAs(1-y)N(y) quantum well layer, leading to resonant peaks in the current-voltage characteristics. By varying the magnetic field applied perpendicular to the current direction, we can tune an electron to tunnel into a given k state of the well; since the applied voltage tunes the energy, we can map out the form of the energy-momentum dispersion curves of E- and E+. The data reveal that for a small N content (approximately 0.1%) the E- and E+ subbands are highly nonparabolic and that the heavy effective mass E+ states have a significant Gamma-conduction band character even at k=0.
Endicott
J
J
School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom.
Patanè
A
A
Ibáñez
J
J
Eaves
L
L
Bissiri
M
M
Hopkinson
M
M
Airey
R
R
Hill
G
G