Interaction effects in conductivity of Si inversion layers at intermediate temperatures.
We compare the temperature dependence of resistivity rho(T) of Si-metal-oxide-semiconductor field-effect transistors with the recent theory by Zala et al. In this comparison, the effective mass m* and g* factor for mobile electrons have been determined from independent measurements. An anomalous increase of rho with temperature, which has been considered as a signature of the "metallic" state, can be described quantitatively by the interaction effects in the ballistic regime. The in-plane magnetoresistance rho(B(axially)) is only qualitatively consistent with the theory; the lack of quantitative agreement indicates that the magnetoresistance is more sensitive to sample-specific effects than rho(T).
Pudalov
V M
VM
Serin Physics Lab, Rutgers University, Piscataway New Jersey 08854, USA.
Gershenson
M E
ME
Kojima
H
H
Brunthaler
G
G
Prinz
A
A
Bauer
G
G