title: Atomically precise placement of single dopants in si.
abstract: We demonstrate the controlled incorporation of P dopant atoms in Si(001), presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si(001) and show that it is possible to thermally incorporate P atoms into Si(001) below the H-desorption temperature. Control over the precise spatial location at which P atoms are incorporated was achieved using STM H lithography. We demonstrate the positioning of single P atoms in Si with approximately 1 nm accuracy and the creation of nanometer wide lines of incorporated P atoms.
authors.affiliation: Centre for Quantum Computer Technology, School of Physics, University of New South Wales, Sydney, NSW 2052, Australia. steven@phys.unsw.edu.au
authors.forename: S R
authors.initials: SR
authors.lastname: Schofield
authors.forename: N J
authors.initials: NJ
authors.lastname: Curson
authors.forename: M Y
authors.initials: MY
authors.lastname: Simmons
authors.forename: F J
authors.initials: FJ
authors.lastname: Ruess
authors.forename: T
authors.initials: T
authors.lastname: Hallam
authors.forename: L
authors.initials: L
authors.lastname: Oberbeck
authors.forename: R G
authors.initials: RG
authors.lastname: Clark