title: Mott gap excitations and resonant inelastic x-ray scattering in doped cuprates.
abstract: Predictions are made for the momentum- and carrier-dependent degradation of the Mott gap upon doping in high-T(c) cuprates as would be observed in Cu K-edge resonant inelastic x-ray scattering (RIXS). The two-dimensional Hubbard model with second- and third-nearest-neighbor hopping terms has been studied by numerical exact diagonalization. Special emphasis is placed on the particle-hole asymmetry of the Mott gap excitations. We argue that the Mott gap excitations observed by RIXS are significantly influenced by the interaction between charge carriers and antiferromagnetic correlations.
authors.affiliation: Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
authors.forename: Kenji
authors.initials: K
authors.lastname: Tsutsui
authors.forename: Takami
authors.initials: T
authors.lastname: Tohyama
authors.forename: Sadamichi
authors.initials: S
authors.lastname: Maekawa