title: Evidence for a new class of defects in highly n-doped Si: donor-pair-vacancy-interstitial complexes.
abstract: Electron channeling experiments performed on individually scanned, single columns of atoms show that in highly n-type Si grown at low temperatures the primary electrically deactivating defect cannot belong to either the widely accepted class of donor-vacancy clusters or a recently proposed class of donor pairs. First-principles calculations suggest a new class of defects consisting of two dopant donor atoms near a displaced Si atom, which forms a vacancy-interstitial pair. These complexes are consistent with the present experimental results, the measured open volume of the defects, the observed electrical activity as a function of dopant concentration, and the enhanced diffusion of impurities in the presence of deactivated dopants.
authors.affiliation: Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974, USA. voyles@engr.wisc.edu
authors.forename: P M
authors.initials: PM
authors.lastname: Voyles
authors.forename: D J
authors.initials: DJ
authors.lastname: Chadi
authors.forename: P H
authors.initials: PH
authors.lastname: Citrin
authors.forename: D A
authors.initials: DA
authors.lastname: Muller
authors.forename: J L
authors.initials: JL
authors.lastname: Grazul
authors.forename: P A
authors.initials: PA
authors.lastname: Northrup
authors.forename: H-J L
authors.initials: HJ
authors.lastname: Gossmann