Atomically precise placement of single dopants in si.
We demonstrate the controlled incorporation of P dopant atoms in Si(001), presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si(001) and show that it is possible to thermally incorporate P atoms into Si(001) below the H-desorption temperature. Control over the precise spatial location at which P atoms are incorporated was achieved using STM H lithography. We demonstrate the positioning of single P atoms in Si with approximately 1 nm accuracy and the creation of nanometer wide lines of incorporated P atoms.
Schofield
S R
SR
Centre for Quantum Computer Technology, School of Physics, University of New South Wales, Sydney, NSW 2052, Australia. steven@phys.unsw.edu.au
Curson
N J
NJ
Simmons
M Y
MY
Ruess
F J
FJ
Hallam
T
T
Oberbeck
L
L
Clark
R G
RG