title: Coherent backscattering near the two-dimensional metal-insulator transition.
abstract: We have studied corrections to conductivity due to the coherent backscattering in low-disordered two-dimensional electron systems in silicon for a range of electron densities including the vicinity of the metal-insulator transition, where the dramatic increase of the spin susceptibility has been observed earlier. We show that the corrections, which exist deeper in the metallic phase, weaken upon approaching the transition and practically vanish at the critical density, thus suggesting that the localization is suppressed near and at the transition even in zero field.
authors.affiliation: Physics Department, Northeastern University, Boston, Massachusetts 02115, USA.
authors.forename: Maryam
authors.initials: M
authors.lastname: Rahimi
authors.forename: S
authors.initials: S
authors.lastname: Anissimova
authors.forename: M R
authors.initials: MR
authors.lastname: Sakr
authors.forename: S V
authors.initials: SV
authors.lastname: Kravchenko
authors.forename: T M
authors.initials: TM
authors.lastname: Klapwijk