Fabrication of SiC-C coaxial nanocables: thickness control of C outer layers.
Aligned SiC-C coaxial nanocables were synthesized via the direct growth of SiC nanowires from silicon substrates and subsequent carbon deposition using pyrolysis of methane; the average diameter of the SiC nanowire cores is 20 nm; the thickness of the C outer layers is controlled in the range 3-50 nm; the degree of crystalline perfection of the graphitic sheets increases with the thickness.
Department of Chemistry, Korea University, Jochiwon 339-700, S. Korea.
Hwa Young
HY
Kim
Seung Yong
SY
Bae
Nam Seo
NS
Kim
Jeunghee
J
Park