A liftoff technique for molecular nanopatterning.
For quantum-dot cellular automata molecular electronic devices, one of the fundamental tasks is to arrange the molecules on a surface in a controlled manner. In this report, we discuss a molecular lift off technique to form nanopatterns toward the development of molecular circuits. In our molecular lift off technique, we use electron beam lithography to form nano-trenches on a polymethylmethacrylate (PMMA) film on a SiO2 wafer. This wafer is soaked in a Creutz-Taube ion [(NH3)5Ru(pyrazine)Ru(NH3)5](o-toluenesulfonate)5 (CT5) aqueous solution. After residual PMMA removal, atomic force microscopy is used to investigate the resulting surface. Thirty-five nanometer CT5 lines are demonstrated on a SiO2 surface. Compared with other molecular nanopatterning techniques, ours is both economical and capable of high-resolution.
Hang
Qingling
Q
Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana, USA.
Wang
Yuliang
Y
Lieberman
Marya
M
Bernstein
Gary H
GH
D000327:Adsorption; D039301:Computers, Molecular; D003460:Crystallization / Q000379:methods*; D004583:Electrons; D008567:Membranes, Artificial; D018625:Microscopy, Atomic Force; D008968:Molecular Conformation; D036103:Nanotechnology / Q000295:instrumentation / Q000379:methods*; D010781:Photography / Q000379:methods; D019904:Polymethyl Methacrylate / Q000737:chemistry*; D045663:Quantum Dots; D012822:Silicon Dioxide / Q000737:chemistry*; D013499:Surface Properties
D008567:Membranes, Artificial; D012822:Silicon Dioxide; D019904:Polymethyl Methacrylate