Raman spectroscopy and structure of crystalline gallium phosphide nanowires.
Gallium phosphide nanowires with a most probable diameter of approximately 20.0 nm and more than 10 microns in length have been synthesized by pulsed laser vaporization of a heated GaP/5% Au target. The morphology and microstructure of GaP nanowires have been investigated by scanning electron microscopy and transmission electron microscopy. Twins have been observed along the crystalline nanowires, which have a growth direction of [111]. Raman scattering shows a 4 cm-1 downshift of the longitudinal optical phonon peak in the nanowire with respect to the bulk; the transverse optical phonon frequency and line width are, however, the same as in the bulk. The quantum confinement model first proposed by Richter et al. cannot explain the observed behavior of the Raman modes.
Department of Physics, Department of Material Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA.
Qihua
Q
Xiong
R
R
Gupta
K W
KW
Adu
E C
EC
Dickey
G D
GD
Lian
D
D
Tham
J E
JE
Fischer
P C
PC
Eklund
D003461:Crystallography / Q000379:methods*; D004553:Electric Conductivity; D004559:Electric Wiring; D005708:Gallium / Q000737:chemistry*; D008968:Molecular Conformation; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010720:Phosphines / Q000138:chemical synthesis / Q000737:chemistry*; D012666:Semiconductors; D013059:Spectrum Analysis, Raman / Q000379:methods*
D010720:Phosphines; C485338:gallium phosphide; D005708:Gallium