title: Light-emitting field-effect transistor based on a tetracene thin film.
abstract: We report the first organic light-emitting field-effect transistor. The device structure comprises interdigitated gold source and drain electrodes on a Si/SiO(2) substrate. A polycrystalline tetracene thin film is vacuum sublimated on the substrate forming the active layer of the device. Both holes and electrons are injected from the gold contacts into this layer leading to electroluminescence from the tetracene. The output characteristics, transfer characteristics, and the optical emission properties of the device are reported. A possible mechanism for electron injection is suggested.
authors: Institute of Materials Science, Darmstadt University of Technology, Petersenstrasse 23, 64287 Darmstadt, Germany.
authors: Aline
authors: A
authors: Hepp
authors: Holger
authors: H
authors: Heil
authors: Wieland
authors: W
authors: Weise
authors: Marcus
authors: M
authors: Ahles
authors: Roland
authors: R
authors: Schmechel
authors: Heinz
authors: H
authors: von Seggern