title: Insulating tubular BN sheathing on semiconducting nanowires.
abstract: An effective method was developed for generation of insulating tubular boron nitride (BN)-sheathed nanostructures. ZnS nanowires and multilayered Si-SiO2 nanowires were successfully sheathed with insulating tubular BN-forming nanocables. Both the semiconductor nanowire cores and the BN sheaths are crystalline with well-uniform morphologies.
authors: Advanced Materials Laboratory, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-044, Japan. yingchunzhu@yahoo.com
authors: Ying-Chun
authors: YC
authors: Zhu
authors: Yoshio
authors: Y
authors: Bando
authors: Dong-Feng
authors: DF
authors: Xue
authors: Fang-Fang
authors: FF
authors: Xu
authors: Dmitri
authors: D
authors: Golberg