Insulating tubular BN sheathing on semiconducting nanowires.
An effective method was developed for generation of insulating tubular boron nitride (BN)-sheathed nanostructures. ZnS nanowires and multilayered Si-SiO2 nanowires were successfully sheathed with insulating tubular BN-forming nanocables. Both the semiconductor nanowire cores and the BN sheaths are crystalline with well-uniform morphologies.
Zhu
Ying-Chun
YC
Advanced Materials Laboratory, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-044, Japan. yingchunzhu@yahoo.com
Bando
Yoshio
Y
Xue
Dong-Feng
DF
Xu
Fang-Fang
FF
Golberg
Dmitri
D