Advancing contact lines on chemically patterned surfaces.
We report an experimental investigation on advancing contact lines of large drops spreading on chemically patterned surfaces. The model substrates were prepared using microphotolithography allowing precise control of the position and the size of the wettability patterns. Experiments were performed exploring different surface geometries: from ordered to disordered fields of defects and from low to high surface densities. The shape of the contact line between two isolated defects was investigated as a function of the distance. Portions of the contact line on the defects and on the matrix were studied during spreading experiments and were related to the apparent contact angles measured from the final thickness of the drops. A modified Cassie equation based on the line fraction of defects is proposed.
Cubaud
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Laboratoire PMMH, CNRS UMR 7636, ESPCI, 10, rue Vauquelin, 75231 Paris cedex 05, France. cubaud@seas.ucla.edu
Fermigier
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