title: Asymmetric multiple-quantum-well laser diodes with wide and flat gain.
abstract: Asymmetric multiple-quantum-well laser diodes with wide and flat gain spectra were designed, fabricated, and analyzed. The active layer was composed of three 10-nm, one 8-nm, and two 6-nm 0.5% compressive strained wells and four 10-nm and one 5-nm 0.4% tensile strained barrier layer. Measured spectra of antireflection-coated ridge waveguide laser diodes with such quantum-well structures have shown that -1-dB spectral gain bandwidth can be as large as 90 nm.
authors.affiliation: Optical Communication Devices Department, Electronics and Telecommunications Research Institute, 161 Gajeong-Dong, Yuseong-Gu, Daejeon, 305-350 Korea. okkwon@etri.re.kr
authors.forename: Oh-Kee
authors.initials: OK
authors.lastname: Kwon
authors.forename: Kang-ho
authors.initials: KH
authors.lastname: Kim
authors.forename: Eun-Deok
authors.initials: ED
authors.lastname: Sim
authors.forename: Jong-Hoi
authors.initials: JH
authors.lastname: Kim
authors.forename: Hyun-Soo
authors.initials: HS
authors.lastname: Kim
authors.forename: Kwang-Ryong
authors.initials: KR
authors.lastname: Oh