Asymmetric multiple-quantum-well laser diodes with wide and flat gain.
Asymmetric multiple-quantum-well laser diodes with wide and flat gain spectra were designed, fabricated, and analyzed. The active layer was composed of three 10-nm, one 8-nm, and two 6-nm 0.5% compressive strained wells and four 10-nm and one 5-nm 0.4% tensile strained barrier layer. Measured spectra of antireflection-coated ridge waveguide laser diodes with such quantum-well structures have shown that -1-dB spectral gain bandwidth can be as large as 90 nm.
Kwon
Oh-Kee
OK
Optical Communication Devices Department, Electronics and Telecommunications Research Institute, 161 Gajeong-Dong, Yuseong-Gu, Daejeon, 305-350 Korea. okkwon@etri.re.kr
Kim
Kang-ho
KH
Sim
Eun-Deok
ED
Kim
Jong-Hoi
JH
Kim
Hyun-Soo
HS
Oh
Kwang-Ryong
KR