title: Effects of strain on the dissociation dynamics of O2 on Si(001).
abstract: There are two distinctive channels in the dissociation reaction of O2 on Si(001)-(2 x 1): a trapping-mediated channel and a direct-activated channel. Externally applied tensile strain along the <110> direction on the (001) surface is found to suppress the dissociation via a direct-activated channel and to enhance that via a trapping-mediated channel in the temperature range between 200 and 300 K. It has been demonstrated that the dissociation dynamics involving elementary processes such as inelastic scattering and trapping, desorption and/or dissociation from a trapping precursor, and direct dissociation are sensitively influenced by the strain to change the branching ratio of the dissociation reaction.
authors.affiliation: National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan. yata.masanori@nims.go.jp
authors.forename: Masanori
authors.initials: M
authors.lastname: Yata
authors.forename: Yuki
authors.initials: Y
authors.lastname: Uesugi-Saitow
authors.forename: Masahiro
authors.initials: M
authors.lastname: Kitajima
authors.forename: Atsushi
authors.initials: A
authors.lastname: Kubo
authors.forename: Vyacheslav E
authors.initials: VE
authors.lastname: Korsukov