title: Electrical detection of spin coherence in silicon.
abstract: Experimental evidence is presented showing that photocurrents in silicon can be used as highly sensitive readout probes for coherent spin states of localized electrons, the prime candidates for quantum bits in various semiconductor based quantum computer concepts. Conduction electrons are subjected to fast Rabi oscillation induced by means of pulsed electron spin resonance. The collective spin motion of the charge carrier ensemble is reflected by a spin-dependent recombination rate and therefore by the sample conductivity. Because of inhomogeneities, the Rabi oscillation dephases rapidly. However, a microwave induced rephasing is possible causing an echo effect whose intensity contains information about the charge carrier spin state and the coherence decay.
authors.affiliation: Hahn-Meitner-Institut Berlin, Kekuléstrasse 5, D-12489 Berlin, Germany. boehme@hmi.de
authors.forename: Christoph
authors.initials: C
authors.lastname: Boehme
authors.forename: Klaus
authors.initials: K
authors.lastname: Lips