title: Unification of the hole transport in polymeric field-effect transistors and light-emitting diodes.
abstract: A systematic study of the hole mobility in hole-only diodes and field-effect transistors based on poly(2-methoxy-5-(3('),7(')-dimethyloctyloxy)-p-phenylene vinylene) and on amorphous poly(3-hexyl thiophene) has been performed as a function of temperature and applied bias. The experimental hole mobilities extracted from both types of devices, although based on a single polymeric semiconductor, can differ by 3 orders of magnitude. We demonstrate that this apparent discrepancy originates from the strong dependence of the hole mobility on the charge carrier density in disordered semiconducting polymers.
authors.affiliation: Materials Science Centre and DPI, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands.
authors.forename: C
authors.initials: C
authors.lastname: Tanase
authors.forename: E J
authors.initials: EJ
authors.lastname: Meijer
authors.forename: P W M
authors.initials: PW
authors.lastname: Blom
authors.forename: D M
authors.initials: DM
authors.lastname: De Leeuw