High temperature gate control of quantum well spin memory.
Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a tenfold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm(-1) at 170 K and indicate a similar variation at 300 K, in agreement with calculations based on the Rashba effect. Spin relaxation is almost field independent below 20 kV cm(-1) reflecting quantum well interface asymmetry. The results indicate the achievability of a voltage-gateable spin-memory time longer than 3 ns simultaneously with a high electron mobility.
Karimov
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School of Physics and Astronomy, University of Southampton, Southampton, SO17 1BJ, United Kingdom.
John
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Harley
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Lau
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Flatté
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Henini
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Airey
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