Unification of the hole transport in polymeric field-effect transistors and light-emitting diodes.
A systematic study of the hole mobility in hole-only diodes and field-effect transistors based on poly(2-methoxy-5-(3('),7(')-dimethyloctyloxy)-p-phenylene vinylene) and on amorphous poly(3-hexyl thiophene) has been performed as a function of temperature and applied bias. The experimental hole mobilities extracted from both types of devices, although based on a single polymeric semiconductor, can differ by 3 orders of magnitude. We demonstrate that this apparent discrepancy originates from the strong dependence of the hole mobility on the charge carrier density in disordered semiconducting polymers.
Tanase
C
C
Materials Science Centre and DPI, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands.
Meijer
E J
EJ
Blom
P W M
PW
De Leeuw
D M
DM