title: ZnS0.8Se0.2 film for high resolution liquid crystal light valve.
abstract: The structural characteristics and optical and electrical properties of molecular-beam-epitaxy (MBE) grown ZnS(0.8)Se(0.2) thin films on indium-tin-oxide (ITO) glass substrates were investigated in this work. The X-ray diffraction (XRD) results indicated that high quality polycrystalline ZnS(0.8)Se(0.2) thin film grown at the optimized temperature had a preferred orientation along the (111) planes. The transmission electron microscopy (TEM) cross-sectional micrograph of the sample showed a well defined columnar structure with lateral crystal dimension in the order of a few hundred angstroms. Ultraviolet (UV) photoresponsivity as high as 0.01 A/W had been demonstrated and for wavelengths longer than 450 nm, the response was down from the peak response by more than 3 orders of magnitude. The thin ZnS(0.8)Se(0.2) photosensor layer, with a wide energy gap and anisotropic electrical property, makes a transmission UV liquid crystal light valve (LCLV) with high resolution feasible.
authors.affiliation: State Key Laboratory of Silicon Material Science, Zhejiang University, Hangzhou 310027, China dake.shen@gepex.ge.com
authors.forename: Da-ke
authors.initials: DK
authors.lastname: Shen
authors.forename: Gao-rong
authors.initials: GR
authors.lastname: Han
authors.forename: Pi-yi
authors.initials: PY
authors.lastname: Du
authors.forename: Duan-lin
authors.initials: DL
authors.lastname: Que
authors.forename: I K
authors.initials: IK
authors.lastname: Sou