title: High temperature gate control of quantum well spin memory.
abstract: Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a tenfold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm(-1) at 170 K and indicate a similar variation at 300 K, in agreement with calculations based on the Rashba effect. Spin relaxation is almost field independent below 20 kV cm(-1) reflecting quantum well interface asymmetry. The results indicate the achievability of a voltage-gateable spin-memory time longer than 3 ns simultaneously with a high electron mobility.
authors.affiliation: School of Physics and Astronomy, University of Southampton, Southampton, SO17 1BJ, United Kingdom.
authors.forename: O Z
authors.initials: OZ
authors.lastname: Karimov
authors.forename: G H
authors.initials: GH
authors.lastname: John
authors.forename: R T
authors.initials: RT
authors.lastname: Harley
authors.forename: W H
authors.initials: WH
authors.lastname: Lau
authors.forename: M E
authors.initials: ME
authors.lastname: Flatté
authors.forename: M
authors.initials: M
authors.lastname: Henini
authors.forename: R
authors.initials: R
authors.lastname: Airey