Effects of strain on the dissociation dynamics of O2 on Si(001).
There are two distinctive channels in the dissociation reaction of O2 on Si(001)-(2 x 1): a trapping-mediated channel and a direct-activated channel. Externally applied tensile strain along the <110> direction on the (001) surface is found to suppress the dissociation via a direct-activated channel and to enhance that via a trapping-mediated channel in the temperature range between 200 and 300 K. It has been demonstrated that the dissociation dynamics involving elementary processes such as inelastic scattering and trapping, desorption and/or dissociation from a trapping precursor, and direct dissociation are sensitively influenced by the strain to change the branching ratio of the dissociation reaction.
Yata
Masanori
M
National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan. yata.masanori@nims.go.jp
Uesugi-Saitow
Yuki
Y
Kitajima
Masahiro
M
Kubo
Atsushi
A
Korsukov
Vyacheslav E
VE