Effect of boron on the surface tension of molten silicon and its temperature coefficient.
The influence of boron concentration (C(B)/mass%) on the surface tension of molten silicon has been investigated with the sessile drop method under oxygen partial pressure P(O(2))=1.62x10(-25)-2.63x10(-22) MPa, and the results can be summarized as follows. The surface tension increases with C(B) in the range below 2.09 mass%, and the maximum increase rate of the surface tension is about 30 mN m(-1)(mass% C(B))(-1). The temperature coefficient of the surface tension, ( partial differential sigma/ partial differential T)C(B), was found to increase with the boron concentration in molten silicon. At the interface between molten silicon and the BN substrate, a discontinuous Si(3)N(4) layer was reckoned to form and the layer might prevent BN from dissolving into the molten silicon. Since dissolved boron from the BN substrate into the molten silicon is below 0.054 mass% and the associated increase in surface tension is below 1.5 mN m(-1), the contamination from the BN substrate on the surface tension can be ignored. The relation between the surface tension and C(B) indicates negative adsorption of boron and can be well described by combining the Gibbs adsorption isotherm with the Langmuir isotherm.
Yuan
Zhangfu
Z
Multi-Phase Reaction Laboratory, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100080, People's Republic of China. yuanzhf@home.ipe.ac.cn
Mukai
Kusuhiro
K