Quantitative analysis of static capacitance contrast in scanning electron microscopy.
A one-dimensional model is proposed for analysing static capacitance contrast (SCC) in scanning electron microscopy. For the large-scale integrated specimen covered by an insulating thin film, the imaging signal is calculated considering the redistribution of secondary electrons (SEs) and the charging process of the equivalent effective capacitance between the irradiation point and substrate. The calculated SCC as a function of the irradiation charge density is in good agreement with the experimental SCC. It is confirmed that the SCC arises from the redistribution of SEs and the difference in the effective capacitance of irradiation points under the condition of positive charging.
Feng
Ren-Jian
RJ
Department of Electronic Science and Technology, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China.
Zhang
Hai-Bo
HB
Ura
Katsumi
K