title: Exciton dephasing in quantum dot molecules.
abstract: We have measured the exciton dephasing time in InAs/GaAs quantum dot molecules having different interdot barrier thicknesses in the temperature range from 5 to 60 K, using a highly sensitive four-wave mixing heterodyne technique. At 5 K dephasing times of several hundred picoseconds are found. Moreover, a systematic dependence of the dephasing dynamics on the barrier thickness is observed. These results show how the quantum-mechanical coupling of the electronic wave functions in the molecules affects both the exciton radiative lifetime and the exciton-acoustic phonon interaction.
authors.affiliation: Experimentelle Physik II, Universität Dortmund, Otto-Hahn Strasse 4, D-44227 Dortmund, Germany.
authors.forename: P
authors.initials: P
authors.lastname: Borri
authors.forename: W
authors.initials: W
authors.lastname: Langbein
authors.forename: U
authors.initials: U
authors.lastname: Woggon
authors.forename: M
authors.initials: M
authors.lastname: Schwab
authors.forename: M
authors.initials: M
authors.lastname: Bayer
authors.forename: S
authors.initials: S
authors.lastname: Fafard
authors.forename: Z
authors.initials: Z
authors.lastname: Wasilewski
authors.forename: P
authors.initials: P
authors.lastname: Hawrylak