title: Gate-voltage dependence of zero-bias anomalies in multiwall carbon nanotubes.
abstract: Temperature dependence of zero-bias conductance of the vanadium (V)/multiwall carbon nanotube (MWNT)/V structure is studied. As temperature is reduced, the conductance decreases with a functional form consistent with a power law. For the first time, we find that the exponent depends significantly on gate voltage. This exponent dependence cannot be explained by Luttinger-liquid theory for ballistic MWNTs. We interpret the obtained results within the framework of the nonconventional Coulomb blockade theory for strongly disordered MWNTs.
authors.affiliation: Institute of Physics and Tsukuba Research Center for Interdisciplinary Material Science (TIMS), University of Tsukuba, Tsukuba 305-8571, Japan. kanda@lt.px.tsukuba.ac.jp
authors.forename: Akinobu
authors.initials: A
authors.lastname: Kanda
authors.forename: Kazuhito
authors.initials: K
authors.lastname: Tsukagoshi
authors.forename: Yoshinobu
authors.initials: Y
authors.lastname: Aoyagi
authors.forename: Youiti
authors.initials: Y
authors.lastname: Ootuka