title: Intrinsic electron accumulation at clean InN surfaces.
abstract: The electronic structure of clean InN(0001) surfaces has been investigated by high-resolution electron-energy-loss spectroscopy of the conduction band electron plasmon excitations. An intrinsic surface electron accumulation layer is found to exist and is explained in terms of a particularly low Gamma-point conduction band minimum in wurtzite InN. As a result, surface Fermi level pinning high in the conduction band in the vicinity of the Gamma point, but near the average midgap energy, produces charged donor-type surface states with associated downward band bending. Semiclassical dielectric theory simulations of the energy-loss spectra and charge-profile calculations indicate a surface state density of 2.5 (+/-0.2)x10(13) cm(-2) and a surface Fermi level of 1.64+/-0.10 eV above the valence band maximum.
authors.affiliation: Department of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom.
authors.forename: I
authors.initials: I
authors.lastname: Mahboob
authors.forename: T D
authors.initials: TD
authors.lastname: Veal
authors.forename: C F
authors.initials: CF
authors.lastname: McConville
authors.forename: H
authors.initials: H
authors.lastname: Lu
authors.forename: W J
authors.initials: WJ
authors.lastname: Schaff