Microscopic mechanisms of self-compensation in Si delta-doped GaAs.
We combined systematic cross-sectional scanning tunneling microscopy and spectroscopy investigations with Hall measurements on single Si delta-doped layers, as well as Si delta-doped superlattices in GaAs. We found that Si self-compensation involves nucleation and growth of electrically neutral Si precipitates at the expense of the conventional donor Si phase.
Laboratorio Nazionale TASC-INFM, Area Science Park, S.S. 14, Km. 163.5, I-34012 Trieste, Italy.
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S
Modesti
R
R
Duca
P
P
Finetti
G
G
Ceballos
M
M
Piccin
S
S
Rubini
A
A
Franciosi