Microscopic mechanisms of self-compensation in Si delta-doped GaAs.
We combined systematic cross-sectional scanning tunneling microscopy and spectroscopy investigations with Hall measurements on single Si delta-doped layers, as well as Si delta-doped superlattices in GaAs. We found that Si self-compensation involves nucleation and growth of electrically neutral Si precipitates at the expense of the conventional donor Si phase.
Modesti
S
S
Laboratorio Nazionale TASC-INFM, Area Science Park, S.S. 14, Km. 163.5, I-34012 Trieste, Italy.
Duca
R
R
Finetti
P
P
Ceballos
G
G
Piccin
M
M
Rubini
S
S
Franciosi
A
A