Organic field-effect transistors containing a SiO2 nanoparticle thin film as the gate dielectric.
In this article, we report the fabrication of organic field-effect transistors using self-assembled SiO2 as a gate dielectric material and pentacene as a semiconductor. The dielectric layer was self-assembled with 10 layers of SiO2 nanoparticles 45 nm in diameter, and its breakdown field was larger than 0.57 MV/cm. Being a low-cost and low-temperature process, the layer-by-layer self-assembly is particularly suitable for organic field-effect transistor fabrication. The pentacene was thermally evaporated on the substrate under high vacuum at the room temperature. The fabricated transistor has a threshold voltage of 0.3 V, field-effect mobility of 0.05 cm2/Vs, and slope of 1.4 V/decade.
Cui
Tianhong
T
Nanofabrication Center, Department of Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota 55455, USA.
Liang
Guirong
G
Shi
Jingshi
J
D003460:Crystallization / Q000379:methods*; D004563:Electrochemistry / Q000295:instrumentation* / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D009930:Organic Chemicals / Q000737:chemistry; D012666:Semiconductors; D012822:Silicon Dioxide / Q000737:chemistry*; D014173:Transistors, Electronic
D009930:Organic Chemicals; D012822:Silicon Dioxide