Depth profiling of high-energy hydrogen-implanted 6H-SiC.
The results of implanting silicon carbide with a 1-MeV proton beam at a dose of 1 x 10(17) cm(-2) are presented. Using high-resolution confocal Raman spectroscopy, we analyzed the depth profile of the implantation damage before and after thermal annealing. When it is applied to a high-refractive-index medium, such as SiC, this technique requires careful manipulation to ensure the correct interpretation of results. To this end we discuss a simple ray-tracking model that includes the effects of additional spherical aberration and of the Gaussian intensity profile of the excitation beam. In addition, infrared reflectance measurements show evidence of a well-defined step in the refractive-index profile at the expected implantation depth.
Brink
Daniel J
DJ
Department of Physics, University of Pretoria, Pretoria 002, South Africa. dbrink@postino.up.ac.za
Maurice
Thibaut
T
Blanque
Servane
S
Kunert
H
H
Camassel
Jean
J
Pascual
Jordi
J