Characterizing single crystal surfaces using high resolution electron diffraction.
Characterization and controlled manipulation of surfaces is a crucial factor in modern processing of the technologically relevant Si(100) surface. Using spot profile analyzing low energy electron diffraction, the morphological changes from a single stepped vicinal Si(100) surface to a single-domain (2x1) reconstructed surface have been investigated in situ during Si deposition. The temperature range for formation of this kinetically-stabilized single-domain surface was found to be 400-500 degrees C. This single-domain surface could be preserved for further characterization and experiments after quenching to room temperature.
Thien
D
D
Institut für Laser- und Plasmaphysik, Universität Duisburg-Essen, Standort Essen, Universitätsstrasse 5, 45117 Essen, Germany. dagmar.thien@uni-essen.de
Meyer zu Heringdorf
F-J
FJ
Kury
P
P
Horn-von Hoegen
M
M
D003460:Crystallization; D008422:Materials Testing; D046529:Microscopy, Electron, Transmission / Q000295:instrumentation / Q000379:methods; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
D012825:Silicon