Optimization of an ultra low-phase noise sapphire--SiGe HBT oscillator using nonlinear CAD.
In this paper, the electrical and noise performances of a 0.8 microm silicon germanium (SiGe) transistor optimized for the design of low phase-noise circuits are described. A nonlinear model developed for the transistor and its use for the design of a low-phase noise C band sapphire resonator oscillator are also reported. The best measured phase noise (at ambient temperature) is -138 dBc/Hz at 1 kHz offset from a 4.85 GHz carrier frequency, with a loaded QL factor of 75,000.
Cibiel
Gilles
G
Laboratory of Analyse and Architecture of Systems, National Center of Scientific Research (LAAS-CNRS), Toulouse, France. gcibiel@laas.fr
Régis
Myrianne
M
Llopis
Olivier
O
Rennane
Abdelali
A
Bary
Laurent
L
Plana
Robert
R
Kersalé
Yann
Y
Giordano
Vincent
V