title: Modeling and electrokinetic evidences on the processes of the Al(III) sorption continuum in SiO2(s) suspension.
abstract: Reactions of Al(III) at the interface between SiO2(s) and aqueous solution were characteristically and quantitatively studied using electrophoretic methods and applying a surface complexation/precipitation model (SCM/SPM). The surface and bulk properties of Al(III)/SiO2 suspensions were determined as functions of pH and initial Al(III) concentration. Simulated modeling results indicate that the SCM, accounting for the adsorption mechanism, predicts sorption data for low surface coverage only reasonably well. Al(III) hydrolysis and surface hydroxide precipitation must be invoked as the Al(III) concentration and/or pH progressively increase. Accordingly, the three processes in the Al(III) sorption continuum, from adsorption through hydrolysis to surface precipitation, could be identified by the divergence between the SCM/SPM predictions and the experimental data. SiO2(s) suspensions with low Al(III) concentrations (1 x 10(-4) and 1 x 10(-5) M) exhibit electrophoretic behavior similar to that of a pure SiO2(s) system. In Al(III)/SiO2 systems with high Al concentrations of 1 x 10(-3), 5 x 10(-3) and 1 x 10(-2) M, three charge reversals (CR) are observed, separately representing, in order of increasing pH, the point of zero charge (PZC) on the SiO2 substrate (CR1), the onset of the surface precipitation of Al hydroxide (CR2), and at a high pH, the PZC of the Al(OH)3 coating (CR3). Furthermore, in the 1 x 10(-3) M Al(III)/SiO2(s) system, CR2 is consistent with the modeling results of SCM/SPM and provides evidence that Al(III) forms a surface precipitate on SiO2(s) at pH above 4. SiO2(s) dissolution was slightly inhibited when Al(III) was adsorbed onto the surface of SiO2(s), as compared to the dissolution that occurs in a pure SiO2(s) suspension system. Al hydroxide surface precipitation dramatically reduced the dissolution of SiO2(s) because the Al hydroxide passive film inhibited the corrosion of the SiO2(s) surface by OH- ions.
authors.affiliation: Department of Environmental and Safety Engineering, Ming-Chi Institute of Technology, 84, Gunjuan Rd., Taishan, Taipei Hsien 243, Taiwan. whkuan@ccsun.mit.edu.tw
authors.forename: Wen Hui
authors.initials: WH
authors.lastname: Kuan
authors.forename: Shang Lien
authors.initials: SL
authors.lastname: Lo
authors.forename: Ming Kuang
authors.initials: MK
authors.lastname: Wang
mesh_terms: D000327:Adsorption; D000535:Aluminum / Q000737:chemistry*; D004563:Electrochemistry; D006863:Hydrogen-Ion Concentration; D007700:Kinetics; D008956:Models, Chemical; D012212:Rheology; D012822:Silicon Dioxide / Q000737:chemistry*; D013499:Surface Properties; D014867:Water / Q000737:chemistry
chemical_list: D014867:Water; D012822:Silicon Dioxide; D000535:Aluminum