Structure-dependent charge transport and storage in self-assembled monolayers of compounds of interest in molecular electronics: effects of tip material, headgroup, and surface concentration.
The electrical properties of self-assembled monolayers (SAMs) on a gold surface have been explored to address the relation between the conductance of a molecule and its electronic structure. We probe interfacial electron transfer processes, particularly those involving electroactive groups, of SAMs of thiolates on Au by using shear force-based scanning probe microscopy (SPM) combined with current-voltage (i-V) and current-distance (i-d) measurements. Peak-shaped i-V curves were obtained for the nitro- and amino-based SAMs studied here. Peak-shaped cathodic i-V curves for nitro-based SAMs were observed at negative potentials in both forward and reverse scans and were used to define the threshold tip bias, V(TH), for electric conduction. For a SAM of 2',5'-dinitro-4,4'-bis(phenylethynyl)-1-benzenethiolate, VII, V(TH) was nearly independent of the tip material [Ir, Pt, Ir-Pt (20-80%), Pd, Ni, Au, Ag, In]. For all of the SAMs studied, the current decreased exponentially with increasing distance, d, between tip and substrate. The exponential attenuation factors (beta values) were lower for the nitro-based SAMs studied here, as compared with alkylthiol-based SAMs. Both V(TH) and beta of the nitro-based SAMs also depended strongly on the molecular headgroup on the end benzene ring addressed by the tip. Finally, we confirmed the "memory" effect observed for nitro-based SAMs. For mixed SAMs of VII and hexadecanethiol, I, the fraction of the charge collected in the negative tip bias region that can be read out at a positive tip bias on reverse scan (up to 38%) depended on the film composition and decreased with an increasing fraction of I, suggesting that lateral electron hopping among molecules of VII occurs in the vicinity of the tip.
Fan
Fu-Ren F
FR
Department of Chemistry and Biochemistry and Center for Nano- and Molecular Science and Technology, The University of Texas at Austin, Austin, Texas 78712-0165, USA.
Yao
Yuxing
Y
Cai
Lintao
L
Cheng
Long
L
Tour
James M
JM
Bard
Allen J
AJ