title: High-mobility ultrathin semiconducting films prepared by spin coating.
abstract: The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (approximately 50 A), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS(2-x)Se(x) films, which exhibit n-type transport, large current densities (>10(5) A cm(-2)) and mobilities greater than 10 cm2 V(-1) s(-1)--an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).
authors.affiliation: IBM T. J. Watson Research Center, PO Box 218, Yorktown Heights, New York 10598, USA. dmitzi@us.ibm.com
authors.forename: David B
authors.initials: DB
authors.lastname: Mitzi
authors.forename: Laura L
authors.initials: LL
authors.lastname: Kosbar
authors.forename: Conal E
authors.initials: CE
authors.lastname: Murray
authors.forename: Matthew
authors.initials: M
authors.lastname: Copel
authors.forename: Ali
authors.initials: A
authors.lastname: Afzali