title: Elastomeric transistor stamps: reversible probing of charge transport in organic crystals.
abstract: We introduce a method to fabricate high-performance field-effect transistors on the surface of freestanding organic single crystals. The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as approximately 15 cm2/V.s and subthreshold slopes as low as 2nF.V/decade.cm2. Multiple relamination of the transistor stamp against the same crystal does not affect the transistor characteristics; we exploit this reversibility to reveal anisotropic charge transport at the basal plane of rubrene.
authors.affiliation: Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, USA.
authors.forename: Vikram C
authors.initials: VC
authors.lastname: Sundar
authors.forename: Jana
authors.initials: J
authors.lastname: Zaumseil
authors.forename: Vitaly
authors.initials: V
authors.lastname: Podzorov
authors.forename: Etienne
authors.initials: E
authors.lastname: Menard
authors.forename: Robert L
authors.initials: RL
authors.lastname: Willett
authors.forename: Takao
authors.initials: T
authors.lastname: Someya
authors.forename: Michael E
authors.initials: ME
authors.lastname: Gershenson
authors.forename: John A
authors.initials: JA
authors.lastname: Rogers