Combined NRA, channeling-RBS and FTIR ellipsometry analyses for the determination of the interface and bonding state of thin SiO(x) and SiN(x)O(y) layers.
The molecular ions O(+)(2) and NO(+) are im- planted at room temperature into single-crystal silicon with an energy of E=6 keV/atom at fluences ranging from 2.5x10(16) to 3.5x10(17) at/cm(2). The samples are processed by electron beam rapid thermal annealing at 1100 ( degrees )C for 15 s. The depth distributions of the implanted specimens ((18)O) are determined by nuclear reaction analyses using the reaction (18)O(p,alpha)(15)N. Channeling-RBS measurements are performed to obtain the interface structure between the implanted layer and the single-crystal Si substrate. The chemical bonding state of as-implanted and implanted-annealed specimens is observed by FTIR ellipsometry measurements.
Michelmann
R W
RW
Institut für Kernphysik, J.W. Goethe-Universität, August-Euler-Strasse 6, D-60486, Frankfurt, Germany.
Baumann
H
H
Markwitz
A
A
Meyer
J D
JD
Röseler
A
A
Krimmel
E F
EF
Bethge
K
K