title: Interpretation of sputter depth profiles by mixing simulations.
abstract: The interpretation of sputter depth profiles can be simplified by use of computer simulations. Distortions caused by mixing effects and distortions caused by the information depth of the analytical method have to be distinguished. Atomic mixing and the information depth distort the depth profile simultaneously. Therefore, it is necessary to take into consideration a superposition of both distortion effects. The sputtering of a GaAs/A1As multilayer has been calculated on a personal computer with the binary collision approximation code T-DYN by Biersack and with an own layer model. A new computer code LAMBDA has been used for the investigation of the influence of the AES information depth in addition to atomic mixing and preferential sputtering. A comparison of the calculated and the measured depth profile explains the observed effects. Therefore conclusions can be drawn about the original elemental distribution in the sample from the measured depth profile.
authors.affiliation: TU Ilmenau, Institut für Festkörperelektronik, Postfach 327, D-98684, Ilmenau, Germany.
authors.forename: G
authors.initials: G
authors.lastname: Kupris
authors.forename: H
authors.initials: H
authors.lastname: Rössler
authors.forename: G
authors.initials: G
authors.lastname: Ecke
authors.forename: S
authors.initials: S
authors.lastname: Hofmann