The kinetic of the oxidation of InSn48.
The oxidation of InSn48 has been investigated at partial pressures between 10(-8) Pa and 10(+4) Pa over a temperature range from 22 ( degrees )C to 250 ( degrees )C with different analytical methods. The oxide film contains a mixture of several oxides, although indium oxide forms preferentially. Below the melting point a logarithmic growth, and above this, a parabolic growth of the oxide film has been observed. The oxide film formed in air at 250 ( degrees )C does not become thicker than 50 nm in the first 5 min of oxidation.
Preuss
A
A
Institut für Halbleiter- und Mikrosystemtechnik, Technische Universität Dresden, Mommsenstrasse 13, D-01062, Dresden, Germany.
Adolphi
B
B
Wegener
T
T