title: Quantitative high-resolution HAADF-STEM analysis of inversion boundaries in Sb(2)O(3)-doped zinc oxide.
abstract: [Formula: see text] -doped ZnO crystals including inversion boundaries were investigated by high-resolution high-angle annular-dark field (HAADF) scanning transmission electron microscopy (STEM). The images were analysed with the aid of the image simulation based on Bethe method and also the retrieval processing using deconvolution. Utility of these two approaches for the HAADF-STEM analysis is discussed.
authors.affiliation: Department of Physics, Tokyo University of Science, Tokyo 162-8601, Japan.
authors.forename: T
authors.initials: T
authors.lastname: Yamazaki
authors.forename: N
authors.initials: N
authors.lastname: Nakanishi
authors.forename: A
authors.initials: A
authors.lastname: Recnik
authors.forename: M
authors.initials: M
authors.lastname: Kawasaki
authors.forename: K
authors.initials: K
authors.lastname: Watanabe
authors.forename: M
authors.initials: M
authors.lastname: Ceh
authors.forename: M
authors.initials: M
authors.lastname: Shiojiri