title: Determination of a misfit dislocation complex in SiGe/Si heterostructures by image deconvolution technique in HREM.
abstract: The core structure of a dislocation complex in SiGe/Si system composed of a perfect 60 degrees dislocation and an extended 60 degrees dislocation has been revealed at atomic level. This is attained by applying the image deconvolution technique in combination with dynamical diffraction effect correction to an image taken with a 200kV field-emission high-resolution electron microscope. The possible configuration of the dislocation complex is analyzed and their Burgers vectors are determined.
authors.affiliation: Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, China.
authors.forename: D
authors.initials: D
authors.lastname: Wang
authors.forename: J
authors.initials: J
authors.lastname: Zou
authors.forename: W Z
authors.initials: WZ
authors.lastname: He
authors.forename: H
authors.initials: H
authors.lastname: Chen
authors.forename: F H
authors.initials: FH
authors.lastname: Li
authors.forename: K
authors.initials: K
authors.lastname: Kawasaki
authors.forename: T
authors.initials: T
authors.lastname: Oikawa