title: Brillouin scattering study on the wave properties in thin SiC films.
abstract: The modified Rayleigh wave velocities on the SiC hetero-epitaxial films have been investigated using a Brillouin scattering technique. The SiC nanoscopic films were formed on clean surface of Si substrates by the molecular ion beam technique or Ion beam induced chemical vapor deposition. Back scattering geometry was used to obtain the ripple Brillouin scattering from the film surface. Owing to the high stability of the measurement system, the precise velocity measurement was performed. As a result, Rayleigh wave velocity showed a clear dependence on the crystalline structure of SiC film, indicating that the shear moduli of very thin epitaxial films shows similar tendency with those of SiC bulk sample.
authors.affiliation: Faculty of Engineering, Doshisha University, 1-3 Tatara Miyakodani, Kyotanabe, Kyoto 610-0321, Japan. mmatsuka@mail.doshisha.ac.jp
authors.forename: Mami
authors.initials: M
authors.lastname: Matsukawa
authors.forename: Satoshi
authors.initials: S
authors.lastname: Murata
authors.forename: Takashi
authors.initials: T
authors.lastname: Matsumoto
authors.forename: Takaomi
authors.initials: T
authors.lastname: Matsutani
authors.forename: Masato
authors.initials: M
authors.lastname: Kiuchi