title: Combined NRA, channeling-RBS and FTIR ellipsometry analyses for the determination of the interface and bonding state of thin SiO(x) and SiN(x)O(y) layers.
abstract: The molecular ions O(+)(2) and NO(+) are im- planted at room temperature into single-crystal silicon with an energy of E=6 keV/atom at fluences ranging from 2.5x10(16) to 3.5x10(17) at/cm(2). The samples are processed by electron beam rapid thermal annealing at 1100 ( degrees )C for 15 s. The depth distributions of the implanted specimens ((18)O) are determined by nuclear reaction analyses using the reaction (18)O(p,alpha)(15)N. Channeling-RBS measurements are performed to obtain the interface structure between the implanted layer and the single-crystal Si substrate. The chemical bonding state of as-implanted and implanted-annealed specimens is observed by FTIR ellipsometry measurements.
authors.affiliation: Institut für Kernphysik, J.W. Goethe-Universität, August-Euler-Strasse 6, D-60486, Frankfurt, Germany.
authors.forename: R W
authors.initials: RW
authors.lastname: Michelmann
authors.forename: H
authors.initials: H
authors.lastname: Baumann
authors.forename: A
authors.initials: A
authors.lastname: Markwitz
authors.forename: J D
authors.initials: JD
authors.lastname: Meyer
authors.forename: A
authors.initials: A
authors.lastname: Röseler
authors.forename: E F
authors.initials: EF
authors.lastname: Krimmel
authors.forename: K
authors.initials: K
authors.lastname: Bethge