Demonstration of a 1/4-cycle phase shift in the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices.
We examine the phase and the period of the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices utilizing in situ magnetic field calibration by electron spin resonance of diphenyl-picryl-hydrazal. The results confirm a f-independent 1/4-cycle phase shift with respect to the hf=j variant Planck's over 2pi omega(c) condition for j>/=1, and they also suggest a small ( approximately 2%) reduction in the effective mass ratio, m(*)/m, with respect to the standard value for GaAs/AlGaAs devices.
Mani
R G
RG
Gordon McKay Laboratory of Applied Science, Harvard University, 9 Oxford Street, Cambridge, Massachusetts 02138, USA.
Smet
J H
JH
von Klitzing
K
K
Narayanamurti
V
V
Johnson
W B
WB
Umansky
V
V