title: Analytical investigations of tunnel magnetoresistance layers.
abstract: The basic elements of tunnel magnetoresists are two magnetic layers separated by an insulating barrier layer. The uniformity of this only 1-2 nm thick barrier layer up to dot edges and the chemical composition of the layers are properties important for the efficiency of tunnel magnetoresistance devices. These key-properties have been investigated by analytical TEM methods like high resolution TEM imaging and energy-filtered imaging. With regard to the chemical composition the TEM results have been confirmed by XPS investigations. The subsequent oxidation of the barrier is one of the most critical steps of the deposition procedure of the layer stacks. An undersized oxygen dose leads to an incomplete oxidation of the barrier layer with uncontrollable tunnel behaviour. An overdose of oxygen leads to oxygen diffusion in the layers beneath the barrier and uncontrollable magnetic hardness of the lower magnetic electrode.
authors.affiliation: Leibniz-Institut für Festkörper- und Werkstoffforschung, PF 27 01 16, 01171 Dresden, Germany. j.thomas@ifw-dresden.de
authors.forename: Jürgen
authors.initials: J
authors.lastname: Thomas
authors.forename: Rainer
authors.initials: R
authors.lastname: Reiche
authors.forename: Hartmut
authors.initials: H
authors.lastname: Vinzelberg
mesh_terms: D000497:Alloys / Q000737:chemistry; D000537:Aluminum Oxide / Q000737:chemistry; D003035:Cobalt / Q000737:chemistry; D004566:Electrodes; D008280:Magnetics / Q000295:instrumentation*; D008422:Materials Testing; D046529:Microscopy, Electron, Transmission / Q000379:methods; D010084:Oxidation-Reduction; D010100:Oxygen / Q000737:chemistry; D013052:Spectrometry, X-Ray Emission / Q000379:methods; D013499:Surface Properties
chemical_list: D000497:Alloys; D003035:Cobalt; D000537:Aluminum Oxide; D010100:Oxygen