Carrier-envelope phase-controlled quantum interference of injected photocurrents in semiconductors.
We demonstrate quantum interference control of injected photocurrents in a semiconductor using the phase stabilized pulse train from a mode-locked Ti:sapphire laser. Measurement of the comb offset frequency via this technique results in a signal-to-noise ratio of 40 dB (10 Hz resolution bandwidth), enabling solid-state detection of carrier-envelope phase shifts of a Ti:sapphire oscillator.
Fortier
T M
TM
JILA, National Institute of Standards and Technology and the University of Colorado, Boulder, Colorado 80309-0440, USA.
Roos
P A
PA
Jones
D J
DJ
Cundiff
S T
ST
Bhat
R D R
RD
Sipe
J E
JE