title: Demonstration of a 1/4-cycle phase shift in the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices.
abstract: We examine the phase and the period of the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices utilizing in situ magnetic field calibration by electron spin resonance of diphenyl-picryl-hydrazal. The results confirm a f-independent 1/4-cycle phase shift with respect to the hf=j variant Planck's over 2pi omega(c) condition for j>/=1, and they also suggest a small ( approximately 2%) reduction in the effective mass ratio, m(*)/m, with respect to the standard value for GaAs/AlGaAs devices.
authors.affiliation: Gordon McKay Laboratory of Applied Science, Harvard University, 9 Oxford Street, Cambridge, Massachusetts 02138, USA.
authors.forename: R G
authors.initials: RG
authors.lastname: Mani
authors.forename: J H
authors.initials: JH
authors.lastname: Smet
authors.forename: K
authors.initials: K
authors.lastname: von Klitzing
authors.forename: V
authors.initials: V
authors.lastname: Narayanamurti
authors.forename: W B
authors.initials: WB
authors.lastname: Johnson
authors.forename: V
authors.initials: V
authors.lastname: Umansky