Low energy electron irradiation induced deep level defects in 6H-SiC: the implication for the microstructure of the deep levels E1/E2.
N-type 6H-SiC samples irradiated with electrons having energies of E(e)=0.2, 0.3, 0.5, and 1.7 were studied by deep level transient technique. No deep level was detected at below 0.2 MeV irradiation energy while for E(e)>/=0.3 MeV, deep levels ED1, E(1)/E(2), and E(i) appeared. By considering the minimum energy required to displace the C atom or the Si atom in the SiC lattice, it is concluded that generation of the deep levels E(1)/E(2), as well as ED1 and E(i), involves the displacement of the C atom in the SiC lattice.
Chen
X D
XD
Department of Physics, The University of Hong Kong, Hong Kong, People's Republic of China.
Yang
C L
CL
Gong
M
M
Ge
W K
WK
Fung
S
S
Beling
C D
CD
Wang
J N
JN
Lui
M K
MK
Ling
C C
CC