Direct observation of domain wall scattering in patterned Ni80Fe20 and Ni nanowires by current-voltage measurements.
We present measurements of domain wall resistivity, pinned by nanoconstrictions in single layer ferromagnetic wires of Ni80Fe20 and Ni. Unpinning domain walls from the constriction by current-induced switching allows for an unambiguous measurement of their resistivity changes, namely, 1.7% in Ni80Fe20 and 1.82% in Ni and both positive, which supports the theory of spin-dependent impurity scattering. By deriving an empirical relation for the various constriction widths, the large percentage changes of resistivity in ballistic nanocontacts are reproduced, showing a correlation between domain wall magnetoresistance and ballistic magnetoresistance.
Lepadatu
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Spintronics Laboratory, Department of Electronics, The University of York, York YO10 5DD, United Kingdom.
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