title: Low energy electron irradiation induced deep level defects in 6H-SiC: the implication for the microstructure of the deep levels E1/E2.
abstract: N-type 6H-SiC samples irradiated with electrons having energies of E(e)=0.2, 0.3, 0.5, and 1.7 were studied by deep level transient technique. No deep level was detected at below 0.2 MeV irradiation energy while for E(e)>/=0.3 MeV, deep levels ED1, E(1)/E(2), and E(i) appeared. By considering the minimum energy required to displace the C atom or the Si atom in the SiC lattice, it is concluded that generation of the deep levels E(1)/E(2), as well as ED1 and E(i), involves the displacement of the C atom in the SiC lattice.
authors.affiliation: Department of Physics, The University of Hong Kong, Hong Kong, People's Republic of China.
authors.forename: X D
authors.initials: XD
authors.lastname: Chen
authors.forename: C L
authors.initials: CL
authors.lastname: Yang
authors.forename: M
authors.initials: M
authors.lastname: Gong
authors.forename: W K
authors.initials: WK
authors.lastname: Ge
authors.forename: S
authors.initials: S
authors.lastname: Fung
authors.forename: C D
authors.initials: CD
authors.lastname: Beling
authors.forename: J N
authors.initials: JN
authors.lastname: Wang
authors.forename: M K
authors.initials: MK
authors.lastname: Lui
authors.forename: C C
authors.initials: CC
authors.lastname: Ling