A new approach to define dynamics of the ion channel gates.
Voltage-gated ion channels are of great importance in the generation and propagation of electrical signals in the excitable cell membranes. How these channels respond to changes in the potential across the membrane has been a challenging problem, and different approaches have been proposed to address the mechanism of voltage sensing and gating in these channels. In this study, we attempt a new approach by considering a simple two-state gate system and applying the path probability method to construct a nonequilibrium statistical mechanical model of the system. The model which is based on the principles of statistical physics provides a firm physical basis for ion channel gating.
Ozer
Mahmut
M
Department of Electrical and Electronics Engineering, Engineering Faculty, Zonguldak Karaelmas University, 67100 Zonguldak, Turkey. mahmutozer2002@yahoo.com
Erdem
Riza
R
Provaznik
Ivo
I
D002462:Cell Membrane / Q000502:physiology*; D015640:Ion Channel Gating / Q000502:physiology*; D007473:Ion Channels / Q000502:physiology*; D008564:Membrane Potentials / Q000502:physiology; D008959:Models, Neurological; D015233:Models, Statistical; D017711:Nonlinear Dynamics; D009435:Synaptic Transmission / Q000502:physiology
D007473:Ion Channels