Lasing characteristics and optimizations of a diode-side-pumped Tm, Ho:GdVO4 laser.
A diode-pumped Tm, Ho:GdVO4 laser with a side-pumping configuration is demonstrated for the first time to our knowledge. Optimum Tm and Ho dopant concentrations for GdVO4 are somewhat lower than those for garnet and fluoride crystals. With a 3% Tm, 0.3% Ho:GdVO4 crystal an output energy of 31.2 mJ and a slope efficiency of 14.5% were obtained in normal-mode operation at room temperature.
Sato
Atsushi
A
Tohoku Institute of Technology, 35-1 Yagiyama Kasumi-cho Taihaku-ku, Sendai 982-8577, Japan. atsushi@tohtech.ac.jp
Asai
Kazuhiro
K
Mizutani
Kohei
K