title: Effect of particle bombardment on the orientation and the residual stress of sputtered AlN films for SAW devices.
abstract: We present a study of the effect of particle bombardment on the preferred orientation and the residual stress of polycrystalline aluminum nitride (AlN) thin films for surface acoustic wave (SAW) applications. Films were deposited on silicon (100) substrates by radio frequency (RF) sputtering of an aluminum target in an argon and nitrogen gas mixture. The main deposition parameters were changed as follows: the total pressure from 4 mTorr to 11 mTorr, the N2 content in the gas mixture from 20% to 80%, and the substrate self-bias voltage from -10 V to -30 V. If a sufficiently high negative substrate self-bias voltage is induced, (00.2)-oriented films are obtained over the full ranges of pressure and N2 content. Such films have values of residual stress ranging from -3 GPa to +1 GPa, depending on the deposition conditions. Our results suggest that the energy of the Ar ions colliding with the substrate controls the preferred orientation of the films, whereas the directionality of the ions (for the same energy) is the main factor determining the residual stress. To demonstrate the suitability of our material for the intended application, SAW filters with good electroacoustic response have been fabricated using AlN thin films with optimized (00.2) orientation and controlled residual stress.
authors.affiliation: Departamento de Tecnología Electrónica, E.T.S.I. Telecomunicación, Universidad Politénica de Madrid, Ciudad Universitaria, 28040 Madrid, Spain. eiborra@etsit.upm.es
authors.forename: Enrique
authors.initials: E
authors.lastname: Iborra
authors.forename: Marta
authors.initials: M
authors.lastname: Clement
authors.forename: Jesús
authors.initials: J
authors.lastname: Sangrador
authors.forename: Alfredo
authors.initials: A
authors.lastname: Sanz-Hervás
authors.forename: Lucía
authors.initials: L
authors.lastname: Vergara
authors.forename: Miguel
authors.initials: M
authors.lastname: Aguilar