title: Nonvolatile memory with multilevel switching: a basic model.
abstract: There is a current upsurge in research on nonvolatile two-terminal resistance random access memory (RRAM) for next generation electronic applications. The RRAM is composed of a simple sandwich of a semiconductor with two metal electrodes. We introduce here an initial model for RRAM with the assumption that the semiconducting part has a nonpercolating domain structure. We solve the model using numerical simulations and the basic carrier transfer mechanism is unveiled in detail. Our model captures three key features observed in experiments: multilevel switchability of the resistance, its memory retention, and hysteretic behavior in the current-voltage curve.
authors.affiliation: CPHT, Ecole Polytechnique, 91128 Palaiseau Cedex, France.
authors.forename: M J
authors.initials: MJ
authors.lastname: Rozenberg
authors.forename: I H
authors.initials: IH
authors.lastname: Inoue
authors.forename: M J
authors.initials: MJ
authors.lastname: Sánchez