Local near-field enhancement of random Sb-SiN films.
Local near-field enhancement of random Sb-SiN films has been studied. Specimens consisting of a random Sb-SiN film and an optical recording layer were prepared and exposed to a focused laser beam. Laser-induced ablation occurred on the recording layer adjacent to random Sb-SiN film much faster and at much lower power than on a single recording layer. These results indicate that an optical field can be enhanced by random Sb-SiN films. The enhanced field was subsequently investigated by scanning near-field optical microscopy, and the pictures revealed that the enhanced field was localized.
Ou
Ding Rong
DR
Tsinghua University, Beijing 100084, China. oudingrong99@mails.tsinghua.edu.cn
Zhu
Jing
J
Zhu
Ruo Jian
RJ
Wang
Jia
J