Multimode transport in Schottky-barrier carbon-nanotube field-effect transistors.
We present a detailed study on the impact of multimode transport in carbon nanotube field-effect transistors. Under certain field conditions electrical characteristics of tube devices are a result of the contributions of more than one one-dimensional subband. Through potassium doping of the nanotube the impact of the different bands is made visible. We discuss the importance of scattering for a stepwise change of current as a function of gate voltage and explain the implications of our observations for the performance of nanotube transistors.
Appenzeller
J
J
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA.
Knoch
J
J
Radosavljević
M
M
Avouris
Ph
P