Semiconducting surface reconstructions of p-type Si(100) substrates at 5 K.
We report scanning tunneling microscopy (STM) studies of the technologically important Si(100) surface that reveal at 5 K the coexistence of stable surface domains consisting of the p(2 x 1) reconstruction along with the c(4 x 2) and p(2 x 2) reconstructions. Using highly resolved tunneling spectroscopic measurements and tight binding calculations, we prove that the p(2 x 1) reconstruction is asymmetric and determine the mechanism that enables the contrast variation observed in the formation of the bias-dependent STM images for this reconstruction.
Perdigão
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Institut d'Electronique, de Microélectronique et de Nanotechnologie, IEMN (CNRS, UMR 8520), Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.
Deresmes
D
D
Grandidier
B
B
Dubois
M
M
Delerue
C
C
Allan
G
G
Stiévenard
D
D