title: Cavity polaritons in InGaN microcavities at room temperature.
abstract: Cavity polaritons are observed in InGaN quantum well (QW) microcavities at room temperature. High-quality microcavities are fabricated by the wafer-bonding of InGaN QW layers and dielectric distributed Bragg reflectors. The anticrossing behavior of strong exciton-photon coupling is confirmed by vacuum-field Rabi splitting obtained from reflection measurements. This strong coupling is also enhanced by increasing the integrated oscillator strength coupled to the cavity mode. The oscillator strength of InGaN QW excitons is 1 order of magnitude larger than that of GaAs QW excitons.
authors.affiliation: NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan. tawara@nttbrl.jp
authors.forename: T
authors.initials: T
authors.lastname: Tawara
authors.forename: H
authors.initials: H
authors.lastname: Gotoh
authors.forename: T
authors.initials: T
authors.lastname: Akasaka
authors.forename: N
authors.initials: N
authors.lastname: Kobayashi
authors.forename: T
authors.initials: T
authors.lastname: Saitoh