title: Light-induced gaps in semiconductor band-to-band transitions.
abstract: We observe a triplet around the third harmonic of the semiconductor band gap when exciting 50-100 nm thin GaAs films with 5 fs pulses at 3 x 10(12) W/cm(2). The comparison with solutions of the semiconductor Bloch equations allows us to interpret the observed peak structure as being due to a two-band Mollow triplet. This triplet in the optical spectrum is a result of light-induced gaps in the band structure, which arise from coherent band mixing. The theory is formulated for full tight-binding bands and uses no rotating-wave approximation.
authors.affiliation: Institut für Theoretische Physik, Universität Frankfurt, 60054 Frankfurt am Main, Germany.
authors.forename: Q T
authors.initials: QT
authors.lastname: Vu
authors.forename: H
authors.initials: H
authors.lastname: Haug
authors.forename: O D
authors.initials: OD
authors.lastname: Mücke
authors.forename: T
authors.initials: T
authors.lastname: Tritschler
authors.forename: M
authors.initials: M
authors.lastname: Wegener
authors.forename: G
authors.initials: G
authors.lastname: Khitrova
authors.forename: H M
authors.initials: HM
authors.lastname: Gibbs