In situ studies of metal-semiconductor interactions with synchrotron radiation.
The capabilities and performance of a UHV system for in situ studies of metal-semiconductor interactions are described. The UHV system consists of interconnected deposition and analysis chambers, each of which is capable of maintaining a base pressure of approximately 1 x 10(-10) torr. The deposited materials and their reaction products can be studied in situ with RHEED, XAFS, AES, XPS, UPS and ARUPS. Results from a study of the reaction of 0.7- and 1.7-monolayer-thick films of cobalt with strained silicon-germanium alloys are presented. The signal-to-noise ratio obtained in these experiments indicates that the apparatus is capable of supporting in situ EXAFS studies of approximately 0.1-monolayer-thick films.
Sayers
D E
DE
Department of Physics, North Carolina State University, Raleigh, NC 27695, USA.
Goeller
P T
PT
Boyanov
B I
BI
Nemanich
R J
RJ