title: Trace element analysis on Si wafer surfaces by TXRF at the ID32 ESRF undulator beamline.
abstract: Synchrotron radiation total-reflection X-ray fluorescence (SR-TXRF) has been applied to the impurity analysis of Si wafers using a third-generation synchrotron radiation undulator source. A lower limit of detectability (LLD) for Ni atoms of 17 fg (1.7 x 10(8) atoms cm(-2)) has been achieved with an optical set-up based on an Si(111) double-crystal monochromator and a horizontal sample geometry. These first results are very promising for synchrotron radiation trace element analysis since we estimate that it is possible to lower the LLD by a factor of about 25 by employing appropriate optics and detectors. The use of a crystal monochromator opens new possibilities to perform absorption and scattering experiments (NEXAFS and X-ray standing-wave methods) for chemical and structural analysis of ultratrace elements.
authors.affiliation: European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble CEDEX, France.
authors.forename: L
authors.initials: L
authors.lastname: Ortega
authors.forename: F
authors.initials: F
authors.lastname: Comin
authors.forename: V
authors.initials: V
authors.lastname: Formoso
authors.forename: A
authors.initials: A
authors.lastname: Stierle