title: In situ studies of metal-semiconductor interactions with synchrotron radiation.
abstract: The capabilities and performance of a UHV system for in situ studies of metal-semiconductor interactions are described. The UHV system consists of interconnected deposition and analysis chambers, each of which is capable of maintaining a base pressure of approximately 1 x 10(-10) torr. The deposited materials and their reaction products can be studied in situ with RHEED, XAFS, AES, XPS, UPS and ARUPS. Results from a study of the reaction of 0.7- and 1.7-monolayer-thick films of cobalt with strained silicon-germanium alloys are presented. The signal-to-noise ratio obtained in these experiments indicates that the apparatus is capable of supporting in situ EXAFS studies of approximately 0.1-monolayer-thick films.
authors.affiliation: Department of Physics, North Carolina State University, Raleigh, NC 27695, USA.
authors.forename: D E
authors.initials: DE
authors.lastname: Sayers
authors.forename: P T
authors.initials: PT
authors.lastname: Goeller
authors.forename: B I
authors.initials: BI
authors.lastname: Boyanov
authors.forename: R J
authors.initials: RJ
authors.lastname: Nemanich