title: Kinetics in surface reconstructions on GaAs(001).
abstract: We have successfully controlled the surface structures of GaAs(001) by changing incident As-molecular species. Under As4 fluxes, the c(4 x 4) reconstruction with Ga-As dimers [c(4 x 4)alpha structure] is obtained, but the formation of three As-As dimer structures [c(4 x 4)beta structure] is kinetically limited. On the other hand, the structure change from the (2 x 4), through c(4 x 4)alpha, to c(4 x 4)beta phases is observed under As2 fluxes. We found that the c(4 x 4)alpha structure is energetically metastable and provides a kinetic pathway for the structure change between the (2 x 4) and c(4 x 4)beta phases under As2 fluxes.
authors.affiliation: National Institute for Materials Science, Tsukuba 305-0047, Japan. OHTAKE.Akihiro@nims.go.jp
authors.forename: Akihiro
authors.initials: A
authors.lastname: Ohtake
authors.forename: Pavel
authors.initials: P
authors.lastname: Kocán
authors.forename: Jun
authors.initials: J
authors.lastname: Nakamura
authors.forename: Akiko
authors.initials: A
authors.lastname: Natori
authors.forename: Nobuyuki
authors.initials: N
authors.lastname: Koguchi