title: Local structure study of dilute Er in III-V semiconductors by fluorescence EXAFS.
abstract: For understanding the luminescence of Er atoms in III-V semiconductors, OMVPE-grown InP doped with Er has been investigated by fluorescence EXAFS (extended X-ray absorption fine structure) in order to study the local structure around Er atoms. The local structures around the Er atoms doped in InP, with doping as dilute as 3 x 10(12) Er atoms in a 1.5 mm x 1.0 mm spot, were successfully measured by fluorescence EXAFS. The EXAFS analysis revealed that the Er atoms doped in InP above 853 K (which showed low luminescence) formed the rock-salt-structure ErP, while the Er atoms doped in InP below 823 K (which showed high luminescence) substituted on the In site of InP. The dependence of the local structure on growth temperature was observed for the samples doped with 3 x 10(12) atoms and 1.2 x 10(13) atoms of Er.
authors.affiliation: Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-Cho, Chikusa-Ku, Nagoya 464-8603, Japan.
authors.forename: H
authors.initials: H
authors.lastname: Ofuchi
authors.forename: D
authors.initials: D
authors.lastname: Kawamura
authors.forename: J
authors.initials: J
authors.lastname: Tsuchiya
authors.forename: N
authors.initials: N
authors.lastname: Matsubara
authors.forename: M
authors.initials: M
authors.lastname: Tabuchi
authors.forename: Y
authors.initials: Y
authors.lastname: Fujiwara
authors.forename: Y
authors.initials: Y
authors.lastname: Takeda