Light-induced gaps in semiconductor band-to-band transitions.
We observe a triplet around the third harmonic of the semiconductor band gap when exciting 50-100 nm thin GaAs films with 5 fs pulses at 3 x 10(12) W/cm(2). The comparison with solutions of the semiconductor Bloch equations allows us to interpret the observed peak structure as being due to a two-band Mollow triplet. This triplet in the optical spectrum is a result of light-induced gaps in the band structure, which arise from coherent band mixing. The theory is formulated for full tight-binding bands and uses no rotating-wave approximation.
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Institut für Theoretische Physik, Universität Frankfurt, 60054 Frankfurt am Main, Germany.
Haug
H
H
Mücke
O D
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Tritschler
T
T
Wegener
M
M
Khitrova
G
G
Gibbs
H M
HM