title: Semiconducting surface reconstructions of p-type Si(100) substrates at 5 K.
abstract: We report scanning tunneling microscopy (STM) studies of the technologically important Si(100) surface that reveal at 5 K the coexistence of stable surface domains consisting of the p(2 x 1) reconstruction along with the c(4 x 2) and p(2 x 2) reconstructions. Using highly resolved tunneling spectroscopic measurements and tight binding calculations, we prove that the p(2 x 1) reconstruction is asymmetric and determine the mechanism that enables the contrast variation observed in the formation of the bias-dependent STM images for this reconstruction.
authors.affiliation: Institut d'Electronique, de Microélectronique et de Nanotechnologie, IEMN (CNRS, UMR 8520), Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.
authors.forename: L
authors.initials: L
authors.lastname: Perdigão
authors.forename: D
authors.initials: D
authors.lastname: Deresmes
authors.forename: B
authors.initials: B
authors.lastname: Grandidier
authors.forename: M
authors.initials: M
authors.lastname: Dubois
authors.forename: C
authors.initials: C
authors.lastname: Delerue
authors.forename: G
authors.initials: G
authors.lastname: Allan
authors.forename: D
authors.initials: D
authors.lastname: Stiévenard