title: Spin injection in the nonlinear regime: band bending effects.
abstract: We report on electrical spin-injection measurements into a nonmagnetic semiconductor in the nonlinear regime. For voltage drops across the interface larger than a few mV the spin-injection efficiency decreases strongly. The effect is caused by repopulation of the minority spin level in the magnetic semiconductor due to band bending at the interface.
authors.affiliation: Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, 97074 Würzburg, Germany.
authors.forename: G
authors.initials: G
authors.lastname: Schmidt
authors.forename: C
authors.initials: C
authors.lastname: Gould
authors.forename: P
authors.initials: P
authors.lastname: Grabs
authors.forename: A M
authors.initials: AM
authors.lastname: Lunde
authors.forename: G
authors.initials: G
authors.lastname: Richter
authors.forename: A
authors.initials: A
authors.lastname: Slobodskyy
authors.forename: L W
authors.initials: LW
authors.lastname: Molenkamp