title: New methods for semiconductor charge-diffusion-length measurements using synchrotron radiation.
abstract: The extension of a new theory on the X-ray energy response of semiconductor detectors is carried out to characterize the X-ray response of a multichannel semiconductor detector fabricated on one silicon wafer. Recently, these multichannel detectors have been widely utilized for position-sensitive observations in various research fields, including synchrotron radiation research and fusion-plasma investigations. This article represents the verification of the physics essentials of a proposed theory on the X-ray response of semiconductor detectors. The three-dimensional charge-diffusion effects on the adjoining detector-channel signals are experimentally demonstrated at the Photon Factory for two types of multichannel detectors. These findings are conveniently applicable for measuring diffusion lengths for industrial requirements.
authors.affiliation: Plasma Research Centre, University of Tsukuba, Ibaraki 305, Japan.
authors.forename: J
authors.initials: J
authors.lastname: Kohagura
authors.forename: T
authors.initials: T
authors.lastname: Cho
authors.forename: M
authors.initials: M
authors.lastname: Hirata
authors.forename: T
authors.initials: T
authors.lastname: Okamura
authors.forename: T
authors.initials: T
authors.lastname: Tamano
authors.forename: K
authors.initials: K
authors.lastname: Yatsu
authors.forename: S
authors.initials: S
authors.lastname: Miyoshi
authors.forename: K
authors.initials: K
authors.lastname: Hirano
authors.forename: H
authors.initials: H
authors.lastname: Maezawa