Spin injection in the nonlinear regime: band bending effects.
We report on electrical spin-injection measurements into a nonmagnetic semiconductor in the nonlinear regime. For voltage drops across the interface larger than a few mV the spin-injection efficiency decreases strongly. The effect is caused by repopulation of the minority spin level in the magnetic semiconductor due to band bending at the interface.
Schmidt
G
G
Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, 97074 Würzburg, Germany.
Gould
C
C
Grabs
P
P
Lunde
A M
AM
Richter
G
G
Slobodskyy
A
A
Molenkamp
L W
LW