Quantum interference effects in the magnetopiezoresistance of InAs/AlGaSb quasi-one-dimensional electron systems.
We measured the low temperature magnetopiezoresistance of a quasi-one-dimensional electron system by fabricating an InAs/AlGaSb micromechanical cantilever. The magnetopiezoresistance curve showed aperiodic but reproducible oscillation, which was similar to the differential magnetoresistance curve obtained for the same device. A detailed comparison with model calculations strongly suggests that the quantum interference effects that cause the conductance fluctuations in the magnetoresistance are responsible for the peculiar behavior of the magnetopiezoresistance.
Yamaguchi
H
H
NTT Basic Research Laboratories, NTT Corporation, Atsugi-shi, Kanagawa 243-0198, Japan.
Tokura
Y
Y
Miyashia
S
S
Hirayama
Y
Y