Precursor mediated cycloaddition reaction of ethylene to the Si(100)c(4 x 2) surface.
We report the direct observation of a precursor state for the cycloaddition reaction (the di-sigma bond formation) of ethylene on Si(100)c(4 x 2) using high-resolution electron energy loss spectroscopy at low temperature, and the meta-stable precursor state is identified as a weakly bonded pi-complex type. The activation energy from the pi-complex precursor to the di-sigma bonded species is experimentally estimated to be 0.2 eV. First-principles calculations support the pi-complex precursor mediated cycloaddition reaction of ethylene on Si(100)c(4 x 2).
The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan.
Masashi
M
Nagao
Hirobumi
H
Umeyama
Kozo
K
Mukai
Yoshiyuki
Y
Yamashita
Jun
J
Yoshinobu
Kazuto
K
Akagi
Shinji
S
Tsuneyuki