Probing of individual semiconductor nanowhiskers by TEM-STM.
Along with rapidly developing nanotechnology, new types of analytical instruments and techniques are needed. Here we report an alternative procedure for electrical measurements on semiconductor nanowhiskers, allowing precise selection and visual control at close to atomic resolution. We use a combination of two powerful microscope techniques, scanning tunneling microscopy (STM) and simultaneous viewing in a transmission electron microscope (TEM). The STM is mounted in the sample holder for the TEM. We describe here a method for creating an ohmic contact between the STM tip and the nanowhisker. We examine three different types of STM tips and present a technique for cleaning the STM tip in situ. Measurements on 1-microm-tall and 40-nm-thick epitaxially grown InAs nanowhiskers show an ohmic contact and a resistance of down to 7 kOmega.
Department of Materials Chemistry, The Nanometer Structure Consortium, Lund University, SE-221 00 Lund, Sweden.
Magnus W
MW
Larsson
L Reine
LR
Wallenberg
Ann I
AI
Persson
Lars
L
Samuelson
D001152:Arsenicals / Q000032:analysis*; D007204:Indium / Q000032:analysis*; D008854:Microscopy, Electron / Q000295:instrumentation / Q000379:methods*; D017348:Microscopy, Electron, Scanning Transmission / Q000295:instrumentation* / Q000379:methods*; D036103:Nanotechnology / Q000379:methods; D012666:Semiconductors
D001152:Arsenicals; D007204:Indium; C076773:indium arsenide