First observation of In(x)Ga(1-x)As quantum dots in GaP by spherical-aberration-corrected HRTEM in comparison with ADF-STEM and conventional HRTEM.
In(x)Ga(1-x)As quantum dots in GaP(100) crystals prepared by the OMVPE technique are observed along the [011] direction with a newly developed 200-kV spherical aberration(Cs)-corrected HRTEM, a 200-kV annular dark-field (ADF)-STEM, and a 200-kV conventional HRTEM equipped with a thermal field-emission gun. The dots are 6-10 nm in size and strongly strained due to the misfit of about 9% with the GaP substrate and GaP cap layer. All of the cross-sectional high-resolution electron micrographs show dumbbell images of Ga and P atomic columns separated by 0.136 nm in well-oriented and perfect GaP areas, but the interpretable images are limited to those taken with the Cs-corrected HRTEM and ADF-STEM with Fourier filtering of the images. The Cs-corrected HRTEM and ADF-STEM are comparable from the viewpoint of interpretable resolution. A detailed comparison between the Cs-corrected HRTEM images and the simulated ones with electron incidence tilted by 1 degree to 5 degrees from the [011] zone axis gives information on local lattice bending in the dots from the images around 0.1 nm resolution. This becomes one of the useful techniques newly available from electron microscopy with sub-angstrom resolution.
Tanaka
Nobuo
N
Center of Integrated Research in Science and Technology, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan. a41263a@nucc.cc.nagoya-u.ac.jp
Yamasaki
Jun
J
Fuchi
Shingo
S
Takeda
Yoshikazu
Y
D001149:Arsenates / Q000737:chemistry*; D003460:Crystallization; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008854:Microscopy, Electron / Q000379:methods; D017348:Microscopy, Electron, Scanning Transmission / Q000379:methods; D010720:Phosphines / Q000737:chemistry*; D045663:Quantum Dots
D001149:Arsenates; D010720:Phosphines; D007204:Indium; C485338:gallium phosphide; D005708:Gallium; C025657:arsenic acid