Quantum interference effects in the magnetopiezoresistance of InAs/AlGaSb quasi-one-dimensional electron systems.
We measured the low temperature magnetopiezoresistance of a quasi-one-dimensional electron system by fabricating an InAs/AlGaSb micromechanical cantilever. The magnetopiezoresistance curve showed aperiodic but reproducible oscillation, which was similar to the differential magnetoresistance curve obtained for the same device. A detailed comparison with model calculations strongly suggests that the quantum interference effects that cause the conductance fluctuations in the magnetoresistance are responsible for the peculiar behavior of the magnetopiezoresistance.
NTT Basic Research Laboratories, NTT Corporation, Atsugi-shi, Kanagawa 243-0198, Japan.
H
H
Yamaguchi
Y
Y
Tokura
S
S
Miyashia
Y
Y
Hirayama