Quantitative transmission electron microscopy analysis of the pressure of helium-filled cracks in implanted silicon.
The pressure of crack-shaped cavities formed in silicon upon implantation with helium and subsequent annealing is quantitatively determined from the measurement of diffraction contrast features visible in transmission electron micrographs taken under well-defined dynamical two-beam conditions. For this purpose, simulated images, based on the elastic displacements associated with a Griffith crack, are matched to experimental micrographs, thus yielding unambiguous quantitative data on the ratio p of the cavity pressure to the silicon matrix shear modulus. Experimental results demonstrate cavity radii of some 10 nm and p values up to 0.22, which may be regarded as sufficiently high for the emission of dislocation loops from the cracks.
Tillmann
K
K
Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany. k.tillmann@fz-juelich.de
Hging
N
N
Trinkaus
H
H
Luysberg
M
M
D004548:Elasticity; D006371:Helium / Q000737:chemistry*; D008854:Microscopy, Electron / Q000379:methods*; D012825:Silicon / Q000737:chemistry*; D013314:Stress, Mechanical
D006371:Helium; D012825:Silicon