Room temperature migration of boron in crystalline silicon.
We demonstrate that substitutional B in silicon can migrate even at room temperature and below, stimulated by a high interstitial flux. Once mobile B is formed, it migrates for long distances with a diffusivity >5 x 10(-13) cm(2)/s, until it assumes an immobile configuration with a migration length independent of the temperature. This phenomenon is present during secondary ion mass spectrometry (SIMS) analyses of B profiles, altering the profile during the analysis itself. These results shed new light on all the data based on SIMS analyses and reported in literature in the last decades.
MATIS-INFM and Dipartimento di Fisica, Università di Padova, Via Marzolo 8, I-35131 Padua, Italy. napolitani@padova.infm.it
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Napolitani
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De Salvador
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Storti
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Carnera
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Mirabella
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Priolo