Bias-dependent generation and quenching of defects in pentacene.
We describe a defect generation phenomenon that is new to organic semiconductors. A defect in pentacene single crystals can be created by bias-stress and persists at room temperature for an hour in the dark but only seconds with 420 nm illumination. The defect gives rise to a hole trap at Ev+0.38 eV and causes metastable transport effects at room temperature. Creation and decay rates of the hole trap have a 0.67 eV activation energy with a small (10(8) s(-1)) prefactor, suggesting that atomic motion plays a key role in the generation and quenching process.
Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
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Lang
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Chi
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Siegrist
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Sergent
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Ramirez