Counterflow measurements in strongly correlated GaAs hole bilayers: evidence for electron-hole pairing.
We study interacting GaAs bilayer hole systems, with very small interlayer tunneling, in a counterflow geometry where equal currents are passed in opposite directions in the two, independently contacted layers. At low temperatures, both the longitudinal and Hall counterflow resistances tend to vanish in the quantum Hall state at total bilayer filling nu=1, demonstrating the pairing of oppositely charged carriers in opposite layers. The counterflow Hall resistance decreases much more strongly than the longitudinal resistances as the temperature is reduced.
Tutuc
E
E
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.
Shayegan
M
M
Huse
D A
DA