title: Response of PIN diodes as room temperature photon detectors.
abstract: In this work we have studied the direct detection and spectrometric capabilities of low-cost commercial silicon photodiodes for X- and gamma-rays (energies from 10 up to 80 keV) envisaging their use in characterization of porous microstructures by X-ray microtomography. The best values of the energy resolution for the 59.5 keV 241Am gamma-ray line, measured at room temperature, were found to be 2.1 and 1.8 keV for SFH00206K (Siemens) and S2506-04 (Hamamatsu) PIN diodes, respectively.
authors.affiliation: Centro de Tecnologia das Radiações, IPEN-CNEN/SP, Caixa Postal 11049, São Paulo 05422-970, Brazil. ccbueno@ipen.br
authors.forename: C C
authors.initials: CC
authors.lastname: Bueno
authors.forename: J A C
authors.initials: JA
authors.lastname: Gonçalves
authors.forename: R R
authors.initials: RR
authors.lastname: de Magalhães
authors.forename: M D S
authors.initials: MD
authors.lastname: Santos
mesh_terms: D005720:Gamma Rays; D017785:Photons; D011829:Radiation Dosage; D011874:Radiometry / Q000295:instrumentation* / Q000379:methods; D015203:Reproducibility of Results; D012666:Semiconductors; D012680:Sensitivity and Specificity; D013696:Temperature; D014965:X-Rays