MOS dosemeter using bismuth oxide (Bi2O3) and copper phthalocyanine (CuPc) polymer thick film.
A metal-oxide-silicon (MOS)-capacitor having an Ag/Bi2O3/CuPc/Ag and an MOS-transistor with Ag (gate)-Bi2O3 (gate insulator)-CuPc (semiconductor)-CdO (drain and source) structure were fabricated using screen-printing polymer thick film. The effects of gamma irradiation on the characteristics of both MOS-capacitor and MOS-transistor were investigated. The flat band voltage (VFB) of the MOS-capacitor showed a shift towards the negative gate voltage when exposed to gamma rays. The IDS-VGS characteristics displayed enhancement mode transistor for such devices. The threshold voltage was found to be 4.25 V, which displayed a linear and gradual decrease in DeltaVT = 0.5 V at VDS = 0 V and DeltaVT = 1.0 V at VDS = 2 V when exposed to gamma rays of dose step of 60 Gy.
Arshak
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A
Physics Department, University of Limerick, Plassey Technological Park, Limerick, Ireland. arousian.arshak@ul.ie
Zleetni
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S
Arshak
K I
KI
D001729:Bismuth / Q000528:radiation effects*; D005720:Gamma Rays; D007211:Indoles / Q000528:radiation effects*; D009942:Organometallic Compounds / Q000528:radiation effects*; D011874:Radiometry / Q000295:instrumentation*; D012834:Silver / Q000528:radiation effects; D014173:Transistors, Electronic
D007211:Indoles; D009942:Organometallic Compounds; D012834:Silver; C015445:copper phthalocyanine; C033301:bismuth oxide; D001729:Bismuth