Carrier-wave Rabi flopping: role of the carrier-envelope phase.
Recently, a dependence of Rabi flopping on the carrier-envelope phase of the exciting laser pulses was predicted theoretically [Phys. Rev. Lett. 89, 127401 (2002)] for excitation of a thin semiconductor film with intense few-cycle pulses. Here, we report corresponding experiments on 50-100-nm thin GaAs films excited with 5-fs pulses. We find a dependence on the carrier-envelope phase arising from the interference of sidebands from the fundamental or the third-harmonic Mollow triplet, respectively, with surface second-harmonic generation.
Institut für Angewandte Physik, Universität Karlsruhe (TH), Wolfgang-Gaede-Strasse 1, 76131 Karlsruhe, Germany.
Oliver D
OD
Mücke
Thorsten
T
Tritschler
Martin
M
Wegener
Uwe
U
Morgner
Franz X
FX
Kärtner
Galina
G
Khitrova
Hyatt M
HM
Gibbs