Epitaxial growth of InP nanowires on germanium.
The growth of III-V semiconductors on silicon would allow the integration of their superior (opto-)electronic properties with silicon technology. But fundamental issues such as lattice and thermal expansion mismatch and the formation of antiphase domains have prevented the epitaxial integration of III-V with group IV semiconductors. Here we demonstrate the principle of epitaxial growth of III-V nanowires on a group IV substrate. We have grown InP nanowires on germanium substrates by a vapour-liquid-solid method. Although the crystal lattice mismatch is large (3.7%), the as-grown wires are monocrystalline and virtually free of dislocations. X-ray diffraction unambiguously demonstrates the heteroepitaxial growth of the nanowires. In addition, we show that a low-resistance electrical contact can be obtained between the wires and the substrate.
Bakkers
Erik P A M
EP
Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven, The Netherlands. erik.bakkers@philips.com
van Dam
Jorden A
JA
De Franceschi
Silvano
S
Kouwenhoven
Leo P
LP
Kaiser
Monja
M
Verheijen
Marcel
M
Wondergem
Harry
H
van der Sluis
Paul
P
D005857:Germanium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008855:Microscopy, Electron, Scanning; D046529:Microscopy, Electron, Transmission; D036103:Nanotechnology; D010720:Phosphines / Q000737:chemistry*; D014961:X-Ray Diffraction
D010720:Phosphines; D005857:Germanium; D007204:Indium; C090882:indium phosphide