title: Crystal orientation-ordered ZnS nanowire bundles.
abstract: We report a novel approach for growing aligned and orientation-ordered ZnS nanowires. Our method relies on a buffer layer of CdSe grown on a Si(111) substrate, on which ZnS nanowires are grown. The growth process of the nanowire bundles is presented. The technique demonstrated could be an effective pathway for growing patterned, aligned, size-controlled, and orientation-ordered ZnS nanowires.
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA.
authors.forename: Daniel F
authors.initials: DF
authors.lastname: Moore
authors.forename: Yong
authors.initials: Y
authors.lastname: Ding
authors.forename: Zhong Lin
authors.initials: ZL
authors.lastname: Wang